30results about How to "Improve electrical reliability" patented technology

The invention discloses a back contact battery and a photovoltaic module, relates to the technical field of photovoltaic, and aims to improve the manufacturing efficiency of the back contact battery, increase the manufacturing capacity of the back contact battery and reduce the electric leakage risk of the battery. The back contact battery comprises a semiconductor substrate, a first doped silicon layer and a second doped silicon layer. The semiconductor substrate comprises a first surface and a second surface which are opposite. The first surface is provided with a first area and a second area which are distributed at an interval, and an interval area positioned between the first area and the second area; the area ratio of the first region in the first surface is greater than or equal to 50% and less than or equal to 60%. A first doped silicon layer is disposed on the first region. The material of the first doped silicon layer comprises polycrystalline silicon and / or monocrystalline silicon. A second doped silicon layer is disposed on the second region. The conductive type of the second doped silicon layer is opposite to that of the first doped silicon layer. The extinction coefficient corresponding to the first doped silicon layer is larger than the extinction coefficient corresponding to the second doped silicon layer.

The invention discloses a semiconductor device, relates to the technical field of semiconductors, and aims to reduce stray capacitance between gate stack structures and improve alternating current characteristics of the semiconductor device. The semiconductor device comprises a semiconductor substrate, a first gate-all-around transistor, a second gate-all-around transistor, an insulating layer, a first dielectric isolation layer and a second dielectric isolation layer. The insulating layer is disposed between the source / drain region included in the first gate-all-around transistor and the source / drain region included in the second gate-all-around transistor. And the first dielectric isolation layer and the second dielectric isolation layer are alternately stacked between a channel region included in the first gate-all-around transistor and a channel region included in the second gate-all-around transistor. A gate stack structure included in the first gate-all-around transistor and / or a gate stack structure included in the second gate-all-around transistor are located on the periphery of the first dielectric isolation layers and the second dielectric isolation layers which are alternately stacked, and film layers, located on the bottom layer and the top layer, in the first dielectric isolation layers and the second dielectric isolation layers which are alternately stacked are the first dielectric isolation layers.

The embodiment of the invention provides a semiconductor structure and a preparation method thereof, a functional chip and electronic equipment, and relates to the technical field of semiconductor structures. The preparation method of the semiconductor structure comprises the following steps: providing a semiconductor layer group, wherein the semiconductor layer group comprises a first dielectric layer, a semiconductor layer, a conductive structure and an electronic element; and removing part of the semiconductor layer from one side of the second surface of the semiconductor layer along the first direction, and exposing the end face of one side, far away from the electronic element, of the conductive structure. And forming a protection structure on one side, far away from the first dielectric layer, of the conductive structure, and enabling the orthographic projection of the protection structure on the semiconductor layer to cover the orthographic projection of the exposed end surface of the conductive structure on the semiconductor layer. And etching a part of the semiconductor layer from one side of the second surface of the semiconductor layer along the first direction by taking the protection structure as a mask. According to the embodiment of the invention, the protection structure is arranged, so that the residual conductive metal particles can be reduced, and the electrical reliability of the semiconductor layer is improved.

A long-endurance fuel cell tractor relates to the technical field of tractors and comprises a frame, and a cab, a trailer, a hydrogen supply system, a fuel cell system and a high-pressure combined module which are arranged on the frame, the cab is arranged at the end of the frame in a turnover mode, and the trailer and the cab are arranged in a spaced mode and used for loading goods. The hydrogen supply system comprises a plurality of hydrogen cylinders which are sequentially arranged between the cab and the trailer in a stacked mode in the vertical direction, and a preset trailer front rotation interval is formed between the hydrogen cylinders and the cab. The fuel cell system is arranged between the cab and the frame, and the fuel cell system is connected with the hydrogen supply system; the high-voltage combined module comprises an integrated controller and a high-voltage box which are connected, and the integrated controller and the high-voltage box are arranged on any side edge of the frame; and the fuel cell system and the high-voltage box are electrically connected with the integrated controller respectively. The endurance can be effectively increased, meanwhile, front rotation of the whole vehicle is guaranteed, and the convenience of assembly and maintenance is improved through the layout structure.

The application discloses a kind of nuclear power plant deep burying ground connection slender ground electrode installation construction methods, comprising the following steps: temporarily fixed support is fixedly installed on the outer wall of nuclear power plant workshop;Reinforced anchor rod is installed in the backfill layer below the lower end of ground electrode;The body of ground electrode is tied and fixed on temporarily fixed support, and the lower end of ground electrode is tied and fixed on reinforced anchor rod;Ground electrode is accepted for concealed works;From the lower end of ground electrode, backfill is carried out layer by layer upwards, the connection of temporarily fixed support and ground electrode is released layer by layer, and temporarily fixed support at the place is removed;After the height of backfill layer rises to the top end of ground electrode, lightning protection grounding well is installed at the top of ground electrode;Continue backfill until the height of backfill layer and the well lid of lightning protection grounding well are flush.The application solves the problems of complex process, large workload of traditional ground electrode installation construction method, and the problem that ground resistance increases due to the fact that ground electrode and backfill layer are not in close contact, which affects the grounding effect.

The invention relates to the technical field of semiconductor manufacturing, and discloses a chemical mechanical planarization method and a chemical mechanical planarization device.The chemical mechanical planarization method comprises the steps that a to-be-planarized structure is provided, the to-be-planarized structure comprises a substrate layer and a sacrificial layer, a groove is formed in the substrate layer, the sacrificial layer is located on the surface of one side of the substrate layer, and the sacrificial layer is located on the surface of the other side of the substrate layer; the sacrificial layer fills the groove; performing a chemical mechanical planarization step on the surface of one side, deviating from the substrate layer, of the sacrificial layer according to the first process parameter; performing a chemical mechanical planarization step on the surface of one side, deviating from the substrate layer, of the sacrificial layer according to a second process parameter; and when the thickness of any area of the sacrificial layer located on the substrate layer is reduced to zero, the polishing head sets the pressure value applied to the corresponding area of the sacrificial layer to be zero. And when the thickness of any area of the sacrificial layer located on the substrate layer is reduced to zero, the polishing head sets the pressure value applied to the corresponding area of the sacrificial layer to be zero, and the situation that the polishing head continues to polish the area is avoided.

The invention belongs to the technical field of electrical contact preparation, and particularly relates to an electrical contact for improving the reliability of a direct-current relay and a preparation method. According to the prepared contact material, the 3D printing technology is adopted, partition design is carried out on materials of different parts, and a working layer still keeps a CuTe0.3 material with excellent arc erosion resistance and welding resistance; the connecting layer is made of CuW or CuWC, and the material has extremely high hardness, so that the connecting layer can bear high load and abrasion of a connecting structure, and the performance of long-term stable connection is ensured; the conduction layer is made of pure silver, silver has excellent flow guide performance, all parts are effectively combined through the conductive adhesive to form a whole, contact resistance can be effectively reduced, contact heating is reduced, and therefore energy consumption is reduced.

A circuit board according to an embodiment includes: a first metal layer; and a second metal layer disposed on the first metal layer, in which the first metal layer includes an oxide layer formed by oxidizing a region of a predetermined depth from a lower surface of the first metal layer, the first metal layer and the second metal layer include a plurality of electrode patterns disposed on the oxide layer and spaced apart from each other, the oxide layer insulates the plurality of electrode patterns from each other.

The application provides an epitaxial device and a semiconductor device. The epitaxial device comprises an epitaxial process reaction cavity and a first laser control system. The epitaxial process reaction cavity is provided with a tray for carrying a substrate, and the epitaxial process reaction cavity comprises a first laser visible window. The first laser control system is used for emitting a first laser, and the first laser is emitted to the surface of the substrate carried by the tray after passing through the first laser visible window. During an epitaxial growth process, the area of the surface of the substrate which is not irradiated by the first laser forms a first growth surface, the first laser is used for interfering with the epitaxial growth process, and the area of the surface of the substrate which is irradiated by the first laser forms a second growth surface, the surface morphology of the second growth surface is different from that of the first growth surface, so that the epitaxial layer formed on the second growth surface is peeled off after high-temperature annealing, thereby forming a patterned epitaxial layer in the epitaxial process reaction cavity, and improving the electrical reliability of the semiconductor device.

The utility model discloses a kind of multi-grade adjustment rotary switches, including base, shell cover, rotating handle and contact assembly, rotating handle rotationally arranged between base and shell cover, and drive rod extending along its radial direction is provided;Contact assembly includes the multiple elastic structure's moving contact bridge of the shaft center of rotating handle as center annularly arranged in installation cavity, and multiple static contact pieces are arranged in base and respectively opposite multiple moving contact bridges, multiple moving contact bridges are connected and respectively located on the movement path of drive rod, drive rod respectively drives multiple moving contact bridges and multiple static contact pieces contact in rotating handle rotating process, by the mechanism of the wheel contact formed by drive rod and multiple moving contact bridges, operation pressure is significantly dispersed, avoid single moving contact bridge sustained stress, greatly reduce the mechanical load and fatigue degree of moving contact bridge, reduce the probability of heating, reduce wear and risk of fusion welding, extend mechanical service life.

Provided is a laminated ceramic electronic component having improved mechanical strength and reliability. The laminated ceramic electronic component includes: a ceramic body in which a first internal electrode and a second internal electrode are laminated, the first main surface and the second main surface are opposite to each other in the stacking direction, the first side surface and the second side surface are opposite to each other in the width direction which is straight along with the stacking direction, and the first end surface and the second end surface are opposite to each other in the length direction which is straight along with the stacking direction and the width direction; a first external electrode formed on the first end surface, the edge portion of the first external electrode further extending from the first end surface to the first main surface, the second main surface, the first side surface, and the second side surface; and a second external electrode formed on the second end surface, the edge portion further extending from the second end surface to the first main surface, the second main surface, the first side surface, and the second side surface, the first internal electrode being led out to the first end surface and connected to the first external electrode, and the second internal electrode being led out to the second end surface and connected to the second external electrode, the first external electrode and the second external electrode are each provided with a base external electrode, a resin layer formed on the outer side of the base external electrode, and at least one plated external electrode layer formed on the outer side of the resin layer, and the base external electrode is discontinuously formed on the ceramic body. The ceramic body has an exposed region partially exposed from the discontinuously formed base external electrode, the resin layer covers the discontinuously formed base external electrode and the exposed region, the first external electrode is in the first end surface, and the second external electrode is in the second end surface. The first external electrode and the second external electrode are respectively formed on the first main surface, the second main surface, the first side surface and the second side surface, and are completely covered by a resin layer on the substrate external electrode and the exposed region which are formed discontinuously. The substrate is provided with a region in which the resin layer covers the substrate external electrode and the exposed region which are formed discontinuously, and a resin layer non-forming region in which the resin layer does not cover the substrate external electrode and the exposed region which are formed discontinuously.

A package includes: a carrier; the first chip is provided with an integrated transistor and comprises a second terminal, a third terminal and a first terminal attached to the carrier, the first terminal and the third terminal are formed on one main surface of the first chip, the second terminal is formed on the other opposite main surface of the first chip, and the third terminal is formed on the other opposite main surface of the first chip. The first terminal is a source or emitter terminal, the second terminal is a drain or collector terminal, and the third terminal is a gate or base terminal; a conductive structure at least partially conductive and attached to the second terminal; an encapsulation material at least partially encapsulating the carrier, the first chip, and the conductive structure; and an insulating layer disposed on a surface portion of the electrically conductive structure or of the carrier, the surface portion being exposed outside the encapsulation material, where the insulating layer is thermally conductive and electrically insulating.

On one hand, the invention aims to provide a semiconductor package which comprises a connecting column and has a novel structure with excellent connection reliability. A semiconductor package according to the present invention has: a semiconductor chip; a first connector having a first surface on which the semiconductor chip is mounted and a first connection surface provided on the first surface; the second connecting body is provided with a second connecting surface; the aspect ratio (length / diameter) of the connecting column is 1-10, and a first end part and a second end part of the connecting column are respectively jointed with the first connecting surface and the second connecting surface and are electrically connected with the first connecting surface and the second connecting surface; and a solder joint point provided between the first connection surface and the first end portion.

A lighting device according to an embodiment of the present invention comprises: a support plate; the circuit board is arranged on the supporting plate; the plurality of bonding pads are arranged on one side of the circuit board; a light source portion disposed on the support plate and having a light emitting device and a plurality of bond pads; a plurality of connection members connecting the plurality of pads to the plurality of bond pads, respectively; and a plurality of molded portions covering different regions of at least one of the plurality of connecting members, in which an uppermost end of at least one of the plurality of molded portions may be disposed at a position higher than a highest point of the plurality of connecting members with respect to an upper surface of the circuit board.

A light emitting diode having a plurality of light emitting cells is provided. A light emitting diode according to an embodiment includes a reflection metal layer covering a region between light emitting cells, in which the reflection metal layer is disposed between connectors electrically connecting adjacent light emitting cells, and electrically insulated from a bump pad.

The present application relates to a display device and an electronic device including the same. The display device of the present application includes a display panel including a first pad, a packaging substrate facing the display panel, and a closed linear shape anisotropic conductive adhesive layer. The packaging substrate includes a glass substrate, at least one insulating layer disposed on one surface of the glass substrate, a signal line disposed on the one surface of the glass substrate, and a second pad electrically connected to the signal line and corresponding to the first pad. The closed linear shape anisotropic conductive adhesive layer is disposed between the display panel and the packaging substrate, bonds the display panel and the packaging substrate, and electrically connects the first pad and the second pad. The display panel includes a semiconductor substrate, a wiring layer disposed on the semiconductor substrate and including the first pad, and a light emitting element disposed on the wiring layer.

Provided is an AC electric motor control device capable of detecting, in an AC electric motor drive device, abnormal operation of an AC electric motor or abnormal operation due to, for example, a sudden change of a load without an erroneous operation regardless of the operational state of the AC electric motor. When driving a three-phase AC electric motor by an inverter, inside a controller, an electric motor constant is calculated using at least one of the current, voltage, and rotational speed of the electric motor and the variation of the constant value is analyzed, thereby detecting abnormal operation of the electric motor or abnormal operation of a load device connected to the electric motor. In order to analyze the constant, a variation to be determined to be abnormal is preset or an abnormal value is calculated in comparison with the accumulated values of past constant changes. Alternatively, only the variation of the constant calculated in the controller is extracted to detect abnormality.

One aspect of the present invention is to provide a connection post which has superior electrical conductivity and thermal conductivity, and which has superior connection reliability even at a high aspect ratio. The connecting column of the present invention is a columnar structure having a diameter of 60-500 [mu] m and an aspect ratio (length / diameter) of 1-10, and the angle formed by the horizontal plane and the vertical plane of the structure is 90 + / -3 DEG.

The purpose of one aspect of the present invention is to provide a solder paste for a connection post, which has excellent connection reliability when a connection pin is connected to a semiconductor and other members. The present invention relates to a solder paste for a connection post, comprising a tin-containing powder having a particle size median of 3-5 [mu] m, a solder powder in which the proportion of powder having a particle size of 8 [mu] m or more is less than 1 wt%, and a flux for improving the wettability of the solder powder.

A semiconductor device includes: a substrate; a plurality of transistor structures disposed on the substrate and spaced apart from each other in a first direction parallel to a surface of the substrate, each of the plurality of transistor structures including a lower active pattern and an upper active pattern spaced apart from the lower active pattern in a second direction intersecting the first direction; a gate dicing film disposed between two adjacent transistor structures of the plurality of transistor structures; and a first layer and a second layer disposed for each lower active pattern, the first layer surrounding at least a first portion of the lower active pattern, the second layer disposed on each first layer. Each of the plurality of transistor structures includes a first work function film surrounding a first portion of the lower active pattern and a second work function film surrounding at least a first portion of the upper active pattern and extending in a first direction, and a gate cutting film penetrating the second work function film and extending in a second direction. A gap is formed between the first portion of the second work function film and the second portion of the second work function film.

The utility model discloses a built-in resistor TYPE-C connector. The built-in resistor TYPE-C connector comprises an upper-row terminal assembly and a lower-row terminal assembly, the lower-row terminal assembly comprises a first lower terminal, a second lower terminal, a third lower terminal and a fourth lower terminal; the first lower terminal is provided with a first upper contact part, and the other first lower terminal is provided with a first lower contact part; the second lower terminal is provided with a second upper contact part, and the other second lower terminal is provided with a second lower contact part; the third lower terminal is provided with a third lower contact part; the fourth lower terminal is provided with a fourth lower contact part; the upper-row terminal assembly comprises a first upper terminal and a second upper terminal; the first upper terminal extends to a position right above the third contact part; the second upper terminal extends to a position right above the fourth contact part; the tail end of the first upper terminal is connected with the tail end of the fourth lower terminal; resistance elements are electrically connected between the tail end of the third lower terminal and the tail end of the second upper terminal and the tail end of the corresponding first lower terminal. User requirements are met, and electrical reliability is high.

The invention relates to a display panel and a manufacturing method thereof. A display panel of the present invention may include a base layer, a pixel defining film disposed on the base layer and defining a light emitting opening, a partition wall defining a partition wall opening overlapping the light emitting opening, and a light emitting layer disposed on the pixel defining film. The light emitting device includes a pixel defining film disposed on a substrate and including a first partition wall layer disposed on the pixel defining film and a second partition wall layer disposed on the first partition wall layer, and a light emitting element disposed in a partition wall opening portion and including an anode, an intermediate layer, and a cathode in contact with the partition wall; the first partition wall layer includes an amorphous (amorphous) alloy.

The invention relates to a manufacturing technology of power switch equipment, in particular to a manufacturing method of a contact seat for an environment-friendly switch and a compact environment-friendly switch, and aims to solve the problem that in the prior art, a contact seat made of a pure insulating material, such as a product formed by an epoxy resin or a common SMC (Sheet Molding Compound) material through a mold pressing process, is not easy to deform. The defect of insufficient mechanical strength generally exists, and the cracking phenomenon is very easy to occur when the current is impacted by short-circuit current, so that the structural integrity of equipment is damaged, and potential safety hazards are caused. The bonding force between the metal framework and the composite material is enhanced through micro-arc oxidation treatment, the overall performance is improved by adopting the SMC composite material with a specific component proportion, the structural integrity is ensured by utilizing an integrated compression molding process, and the contact seat has the advantages that the mechanical strength, the insulating property, the heat conductivity and the heat and humidity resistance of the contact seat are remarkably improved; therefore, the service life of equipment is prolonged, and the electrical reliability is enhanced.

This utility model relates to the field of plug technology and discloses a double-break switch plug, including a housing. The upper surface of the housing is equipped with a power-off button, a power-on button, and an indicator light. Both the power-off button and the power-on button can be pressed down and reset upwards. The lower surface of the housing is equipped with a PE pin arranged in a triangular pattern and two power-on pins. The power-off button, power-on button, indicator light, PE pin, and power-on pins are all connected to the wiring assembly inside the housing. This utility model achieves safe start-stop control. Pressing down the power-on button drives the slider to rise, causing the conductive spring to contact the power-on terminal and energize it. Pressing down the power-off button causes its lower wedge-shaped block to push the locking piece to release the power-on button. The power-on button resets under the action of a third spring, de-energizing it. This double-button mechanism avoids accidental operation, ensuring that power is only connected under clear instructions, improving safety. The operation process is also clear and easy for users to quickly master.

This application relates to the photovoltaic field. Embodiments of this application provide a back-contact battery, a back-contact tandem battery, and a photovoltaic module. The back-contact battery's grid includes a first grid and a second grid. The first grid is connected to an edge grid line, and the second grid is spaced apart from the edge grid line. The second grid includes at least a first sub-grid, a second sub-grid, and a third sub-grid. Along a second direction, the length of the second sub-grid is greater than the length of the first sub-grid and less than the length of the third sub-grid. The vertical distances L1 between the first sub-grid and the chamfered edge, L2 between the second sub-grid and the chamfered edge, and L3 between the third sub-grid and the second edge are all 0.8mm to 1.2mm. The chamfered edge can disperse stress in the edge region of the battery, improve the battery's mechanical strength, and reduce defect areas. The chamfered edge structure combined with the arrangement of the second grid improves the electrical reliability of the edge region of the back-contact battery, thereby enhancing the photoelectric conversion efficiency of the back-contact battery.

The present invention discloses an amorphous InGaZnO / InAlSnO heterojunction composite channel double-gate thin film transistor device and a preparation method thereof. The thin film transistor device comprises: a substrate layer, a bottom gate electrode layer, a top gate electrode layer, a bottom gate insulating layer, a top gate insulating layer, an InAlSnO active layer, an InGaZnO active layer, a source electrode layer, a drain electrode layer and a passivation layer. The present invention effectively suppresses the carrier capture effect and enhances the electrical reliability of the TFT device by forming a composite channel structure with a larger InAlSnO / InGaZnO heterojunction energy band step.

The utility model provides a battery pack and electric equipment. The battery pack comprises a battery cell, a circuit board and a battery management system, the circuit board is arranged on the battery cell and connected with the battery cell, and one end of the circuit board is provided with a first terminal; and the battery management system is arranged beside the battery cell and is provided with a second terminal, and the second terminal is directly inserted into the first terminal. The battery pack is used for achieving the effect of reducing the cost.

A display panel is provided. The display panel includes: a base layer including a light emitting region and a non-light emitting region adjacent to the light emitting region; a light emitting element including a first electrode disposed in the light emitting region, a second electrode disposed on the first electrode, and a light emitting pattern disposed between the first electrode and the second electrode; and a partition wall including a lower layer disposed in the non-light emitting region and an upper layer disposed on the lower layer. The second electrode contacts a side surface of the lower layer, and the lower layer includes a plurality of layers including different metals.

The utility model discloses air disinfection equipment which comprises a shell, a main control unit, an ion generation part and a partition, the shell is used for forming a containing space, a metal strip is arranged on the outer surface of the shell, and at least part of the metal strip is exposed in the environment and can be in contact with a user; a large resistor is arranged in the accommodating space, one end of the large resistor is electrically connected with the metal strip, and the other end of the large resistor is grounded to form a first path; the main control unit is arranged in the accommodating space; the ion generation part is arranged in the accommodating space, is electrically connected with the main control unit and is used for generating and releasing electrons to the environment; and the baffle is arranged in the accommodating space, so that an electrical gap formed between a first section formed from the metal strip to the large resistor in the first path and other electronic components in the accommodating space exceeds a preset safety value. By adopting the mode, other electronic components can be effectively prevented from being damaged by high-voltage discharge, and the electrical reliability of the air disinfection equipment is improved.

At least one electric power storage device that is cylindrical, an upper holder holding the at least one electric power storage device, an insulating plate provided above the upper holder are included. An exhaust valve is provided on the upper end part of the electric power storage device, the upper holder includes an opening part for exposing the exhaust valve, the insulating plate includes a flat plate-shaped main body part, an opening part formed on the main body part and communicating with the opening part, a lid part closing a part of the opening part, and a connecting part that connects the lid part to the main body part. The main body part includes a fixation part for fixing the insulating plate and the upper holder.