Method for preparing aluminium-doped zinc oxide transparent conductive film by solvent thermal process

A technology of aluminum-doped zinc oxide and transparent conductive film, which is applied in the direction of liquid chemical plating, metal material coating process, coating, etc., can solve the problems of unstable ITO performance, human health hazards, and high production costs, and achieve control Reaction and crystal growth, production cost reduction, good crystallinity effect

Inactive Publication Date: 2010-01-20
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high price of In and Sn; In is toxic, pollutes the environment, and causes harm to human health; ITO is unstable in special occasions such as hyd

Method used

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  • Method for preparing aluminium-doped zinc oxide transparent conductive film by solvent thermal process
  • Method for preparing aluminium-doped zinc oxide transparent conductive film by solvent thermal process
  • Method for preparing aluminium-doped zinc oxide transparent conductive film by solvent thermal process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Example 1: Fabrication of Al-doped ZnO Transparent Conductive Film on Glass Substrate

[0046] Step 1: Prepare the substrate

[0047]The glass substrate was cut into a size of 1.8cm×2.5cm, and then placed in acetone (99.0% by mass concentration), ethanol (99.5% by mass percent concentration) and deionized water and cleaned with ultrasonic waves for 15 minutes each, and then the glass substrate Put the sheet into an electric heating constant temperature drying oven at a temperature of 60°C, and take it out after drying for 15 minutes to obtain a spare substrate;

[0048] Step 2: Configure Precursor Solution

[0049] Zinc acetate dihydrate (Zn(CH 3 COO) 2 2H 2 O), aluminum chloride hexahydrate (AlCl 3 ·6H 2 O), ethylene glycol methyl ether (C 3 h 8 o 2 ) and ethanolamine (C 2 h 7 NO) mixing at a temperature of 60°C to obtain a precursor solution;

[0050] Dosage: 100ml of precursor solution contains 2.195g of zinc acetate dihydrate, 0.363g of aluminum chlori...

Embodiment 2

[0067] Example 2: Fabrication of Al-doped ZnO Transparent Conductive Film on Glass Substrate

[0068] Step 1: Prepare the substrate

[0069] Cut the glass substrate into a size of 1.8cm × 2.5cm, then put it into acetone (99.0% by mass concentration), ethanol (99.5% by mass percent concentration) and deionized water and clean it with ultrasonic wave for 10min each, and then place the substrate Put it into an electric heating constant temperature drying oven at a temperature of 70°C, dry it for 10 minutes, and take it out to obtain a spare substrate;

[0070] Step 2: Configure Precursor Solution

[0071] Zinc acetate dihydrate (Zn(CH 3 COO) 2 2H 2 O), aluminum nitrate nonahydrate (Al(NO 3 ) 3 9H 2 O), ethylene glycol methyl ether (C 3 h 8 o 2 ) and ethanolamine (C 2 h 7 NO) mixing at a temperature of 60°C to obtain a precursor solution;

[0072] Dosage: 100ml of precursor solution contains 13.200g of zinc acetate dihydrate, 6.5g of aluminum nitrate nonahydrate (Al...

Embodiment 3

[0082] Example 3: Fabrication of Al-doped ZnO Transparent Conductive Film on Si Substrate

[0083] Step 1: Prepare the substrate

[0084] Cut the Si substrate into a size of 1.8cm×2.5cm, then put it into acetone (99.0% by mass concentration), ethanol (99.5% by mass concentration) and deionized water and clean it with ultrasonic waves for 20min each, and then place the substrate Put it into an electric heating constant temperature drying oven at a temperature of 80°C, dry it for 15 minutes, and take it out to obtain a spare substrate;

[0085] Step 2: Configure Precursor Solution

[0086] Zinc acetate dihydrate (Zn(CH 3 COO) 2 2H 2 O), aluminum chloride hexahydrate (AlCl 3 ·6H 2 O), ethylene glycol methyl ether (C 3 h 8 o 2 ) and ethanolamine (C 2 h 7 NO) mixing at a temperature of 60°C to 80°C to obtain a precursor solution;

[0087] Dosage: 100ml of precursor solution contains 8.8g of zinc acetate dihydrate, 1.5g of aluminum chloride hexahydrate, 2.4ml of ethano...

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Abstract

The invention discloses a method for preparing an aluminium-doped zinc oxide transparent conductive film by solvent thermal process; soluble organic slat and inorganic slat of zinc are taken as precursors, and the aluminium-doped zinc oxide transparent conductive film is deposited on a substrate by the solvent thermal process. By controlling the concentration of reactant precursor liquid, the aluminium ion doping quantity, the thermal reaction temperature of solvent, the thermal reaction time of the solvent, the cooling way of a reaction kettle and the filling amount of the reaction kettle, the technique can deposit the aluminium-doped zinc oxide transparent conductive film on the substrate at the temperature of below 200 DEG C; furthermore, the visible light transmission of the film can reach 80%, and the square resistance is less than 760 omega.

Description

technical field [0001] The invention relates to a method for preparing an aluminum-doped zinc oxide transparent conductive film, more particularly, refers to preparing an aluminum-doped zinc oxide transparent conductive film by a solvothermal method. Background technique [0002] As an important branch of thin film materials, transparent conductive films are widely used because of their good photoelectric properties. The transparent conductive film refers to a film with high transmittance to visible light (wavelength λ within the range of 380nm to 760nm) and high electrical conductivity. Transparency means that the material has a large energy band gap (Eg>3eV) and less free electrons; on the other hand, materials with high electrical conductivity often have more free electrons and are like metals, so they are opaque. Only materials that satisfy both conditions can be applied on transparent conductive films. The current transparent conductive films mainly include: metal ...

Claims

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Application Information

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IPC IPC(8): C23C18/12
Inventor 谷景华高珊张跃
Owner BEIHANG UNIV
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