182 results about "Crystalline oxide" patented technology

An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.

A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.

To provide a method for producing a thin film transistor improved in stability, uniformity, reproducibility, heat resistance, durability or the like, a thin film transistor, a thin film transistor substrate, an image display apparatus, an image display apparatus and a semiconductor device.

In the semiconductor device, a crystalline oxide is used as an N-type transistor and the electron carrier concentration of the crystalline oxide is less than 2×10¹⁷/cm³. Furthermore, the crystalline oxide is a polycrystalline oxide containing In and one or more positive divalent elements selected from Zn, Mg, Cu, Ni, Co and Ca, and the atomic ratio In [In] and the positive divalent element [X][X]/([X]+[In]) is 0.0001 to 0.13.

To provide a field-effect transistor improved in transparency, electrical properties, stability, uniformity, reproducibility, heat resistance and durability, and as a reduced overlap capacity between electrodes.

A field-effect thin film transistor 1001 includes a gate electrode 1025, an active layer, a source electrode 1022 and a drain electrode 1023, wherein a crystalline oxide 1021 containing indium and having an electron carrier concentration of less than 10¹⁸/cm³ is used as the active layer, and the gate electrode 1025 is in self-alignment with the source electrode 1022 and the drain electrode 1023. The crystalline oxide 1021 contains a positive trivalent element different from a positive divalent element or indium.

The invention relates to non-crystalline oxides of formulas (I) and (II), and methods of forming the same, along with field effect transistors, articles of manufacture, and microelectronic devices comprising the non-crystalline oxides.

To provide a highly reliable liquid crystal display device including flexible substrates and a crystalline oxide semiconductor film for a backplane. The device includes a flexible first substrate, a flexible second substrate facing the first substrate, and a liquid crystal layer sealed between the substrates with a sealing member. The first substrate is provided with a layer including a transistor, an organic resin film over the transistor, a pixel electrode and a common electrode over the organic resin film, which partly overlap with each other with an insulating film provided therebetween, and an alignment film thereover. The transistor includes a crystalline oxide semiconductor film as a semiconductor layer where a channel is formed. Drying treatment is performed on the layer before the liquid crystal layer is sealed between the substrates, and steps from the drying treatment to sealing of the liquid crystal layer are performed without exposure to the air.

Provided is a crystalline multilayer structure which has good electrical properties and is useful for semiconductor devices. A crystalline multilayer structure includes a base substrate and a crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween and including a corundum-structured oxide semiconductor as a major component. The oxide semiconductor contains indium and/or gallium as a major component. The crystalline oxide semiconductor thin film contains germanium, silicon, titanium, zirconium, vanadium, or niobium.

Set forth herein are positive electrode active material compositions, e.g., lithium-rich nickel manganese cobalt oxides. The lithium-rich nickel manganese cobalt oxides set forth herein are characterized, in some examples, by an expanded unit cell which maximizes the uniform distribution of transition metals in the crystalline oxide. Also set forth herein are positive electrode thin films including lithium-rich nickel manganese cobalt oxide materials. Disclosed herein are novel and inventive methods of making and using lithium-rich nickel manganese cobalt oxide materials for lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these materials.

The plasma spraying and pyrolyzing process of preparing nanometer hollow microsphere powder of nanometer crystalline oxide includes preparing precursor solution, atomizing, plasma spraying and pyrolyzing in plasma flame to form solid molten drop, and cooling in liquid to solidify form the hollow spherical nanometer crystal structure. The process is simple and suitable for industrial production.

A method is disclosed for synthesizing a crystalline metal oxide powder material containing two or more uniformly distributed metal elements. Crystalline, water containing, oxygen containing inorganic acid salts of the metals are heated to liquefy the salts. The apparent solution contains a uniform mixture of the metal elements. The water is removed from the liquid and the resulting powder calcined in air to decompose the acid salts to a mixed metal crystalline oxide. The method is particularly useful to make doped LiNiO₂ type crystals using hydrated nitrate or nitrite salts of Li, Ni and the dopant elements. Examples of useful salts are LiNO₃.H₂O, Ni(NO₃)₂.6H₂O, Co(NO₃)₂.6H₂O, Al(NO₃)₃.9H₂O, and Mg(NO₃)₂.6H₂O.

A galvanized steel sheet includes a basal steel sheet (BSS) containing C: 0.01-0.15%, Si: 0.001-2.0%, Mn: 0.1-3.0%, Al: 0.001-1.00, P: 0.005-0.060%, and S≦0.01% (all % by mass), balance is Fe and unavoidable impurities; zinc plating layers on both sides of the BSS with 20-120 g/m² plating/side; one or more oxides selected from Fe, Si, Mn, Al, and P oxides and existing in steel sheet superficial portions in direct contact with zinc plating layers and extending from each surface of the BSS to 100 μm deep, with the total amount of the oxides per side 0.01-0.5 g/m²; and a crystalline oxide in the regions from each surface of the BSS to 10 μm depth, which are also located in direct contact with the zinc plating layers, the crystalline oxide including Fe crystal grains in which Si and Mn atoms are distributed in the regions from grain boundaries to 1 μm deep.

A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N³⁻ anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO_3-δ)_α-(ABO_3-δ-γN_γ)_1-α. A represents a divalent element, B represents a tetravalent element, γ satisfies 0.005≦γ≦1.0, 1-α satisfies 0.05≦1-α≦0.9, and 1-α is an area ratio between the regions containing rich N³⁻ anions and the matrix of remaining oxide perovskite material.

An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided.

A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field; and a crystalline spacer layer sandwiched between the pair of magnetic layers; wherein sense current may flow in a direction that is perpendicular to a film plane of the pair of magnetic layers and the spacer layer. The spacer layer includes a crystalline oxide, and either or both magnetic layers whose magnetization direction is variable depending on the external magnetic field has a layer configuration in which a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer and is positioned between the spacer layer and the NiFe layer.

A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.

A multilayer structure with excellent crystallinity and a semiconductor device of the multilayer structure with good mobility are provided. A multilayer structure includes: a corundum structured crystal substrate; and a crystalline film containing a corundum structured crystalline oxide as a major component, the film formed directly on the substrate or with another layer therebetween, wherein the crystal substrate has an off angle from 0.2° to 12.0°, and the crystalline oxide contains one or more metals selected from indium, aluminum, and gallium.

A dielectric ceramic and a laminated ceramic capacitor using the dielectric ceramic are achieved which provide favorable thermal shock resistance without damaging properties or characteristics such as dielectric properties, insulation properties, temperature characteristics, and characteristics in high temperature loading, even when the dielectric layers are reduced in thickness and the number of stacked layers increased. The dielectric ceramic contains, as its main constituent, a barium titanate based compound represented by the general formula ABO₃, and a crystalline oxide containing Al, Mg, and Si is present as secondary phase grains in the dielectric ceramic.