104 results about "Crystalline oxide" patented technology

Provided is a laminate structure 10, including: a crystalline oxide semiconductor film 11 containing In as a main component; and an insulating film 12 laminated in contact with the crystalline oxide semiconductor film 11, wherein the crystalline oxide semiconductor film has one or more regions continuing 3 nm or more in the film thickness direction and the region has a rare gas concentration within a range of 0.5 at % or more and less than 5 at %.

The invention belongs to the technical field of new materials, and discloses an alloy oxide tritium-resistant coating and a preparation method thereof. The preparation method comprises the following steps: after a metal base material is pretreated, sputtering a metal Cr target by adopting a magnetron sputtering technology, and depositing a pure Cr base layer on the surface of the metal base material; a magnetron sputtering technology is adopted, an oxidation transition layer and an alloy oxide layer are sequentially deposited on the surface of a pure Cr base layer by sputtering an Al target and a Cr target at the same time in a dual-power mode, and a composite coating is obtained; and the composite coating is subjected to annealing treatment, and the alloy oxide tritium-resistant coating containing the crystalline oxide is obtained. According to the preparation method, the problem of thermal mismatch between the coating and the base material can be effectively relieved, and the alloy oxide tritium-resistant coating with high binding force with the base material is successfully formed on the surface of the metal base material; the preparation method is simple in technological process, free of pollution in the whole process, high in deposition speed and capable of saving cost; and the prepared alloy oxide tritium-resistant coating has good tritium-resistant and hydrogen-resistant performance.

A semiconductor memory device includes a substrate, a conductive line extending in a first horizontal direction above the substrate, an isolation insulating layer including a channel trench extending in a second horizontal direction intersecting with the first horizontal direction and extending from an upper surface to a lower surface of the isolation insulating layer, above the conductive line, a channel structure disposed above the conductive line, a gate electrode extending in the second horizontal direction, in the channel trench, a capacitor structure above the isolation insulating layer, and a contact structure interposed between the channel structure and the capacitor structure, wherein the channel structure includes an amorphous oxide semiconductor layer disposed in the channel trench above the conductive line, and an upper crystalline oxide semiconductor layer interposed between the amorphous oxide semiconductor layer and the contact structure.

There is provided a semiconductor device comprising at least, a crystalline oxide semiconductor layer which has a band gap of 4.5 eV or more; and a field-effect mobility of 10 cm2 / V·s or higher.

A crystalline oxide film containing gallium as a main component, in which when CuKα rays are made incident on the crystalline oxide film to perform X-ray diffraction, a reflection output in scanning ω and 2θ has a local maximum point when 16.20°<2θ<39.90° and 20.30°<ω<32.20° at an angle φ around a φ axis orthogonal to a surface of the crystalline oxide film at the angle φ where a peak attributable to the crystalline oxide film by ω-2θ measurement is maximum, and 40.10°<ω+θ<40.40° relative to ω and θ at which the reflection output reaches a maximum is satisfied. This provides the crystalline oxide film, a laminated structure, a semiconductor device with excellent semiconductor properties, particularly excellent withstand voltage, and a method for producing a crystalline oxide film.

A semiconductor device having at least a crystalline oxide semiconductor layer, characterized in that the crystalline oxide semiconductor layer has a band gap of 3 eV or more and a field-effect mobility of 30 cm 2 / V·s or more.

A semiconductor device includes a conductive line that extends in a first direction on a substrate, a first oxide semiconductor layer, including a first crystalline oxide semiconductor material containing a first metal element, on the conductive line, a second oxide semiconductor layer, which is in physical contact with the first oxide semiconductor layer and is connected to the conductive line, on the conductive line, a gate electrode that extends in a second direction, which crosses the first direction, on a side of the second oxide semiconductor layer, and a capacitor structure connected to the second oxide semiconductor layer on the second oxide semiconductor layer and the gate electrode, wherein the second oxide semiconductor layer includes a second crystalline oxide semiconductor material containing the first metal element and second and third metal elements, which are different from the first metal element.

A thin-film transistor and an array substrate are provided. The thin-film transistor includes a substrate and an active layer on the substrate. The active layer includes multiple layers of oxides arranged in a stacked manner; the multiple layers of oxides include a channel layer, a transition layer, and a first barrier layer; the channel layer is a layer having the maximum carrier mobility in the multiple layers of oxides; the channel layer is a crystalline oxide layer or an amorphous oxide layer; the transition layer is in direct contact with the channel layer; the first barrier layer is the outermost oxide layer among the multiple layers of oxide; the first barrier layer and the transition layer are both crystalline oxide layers; the band gap of the first barrier layer and the band gap of the transition layer are both greater than the band gap of the channel layer.

The present invention is a crystalline oxide semiconductor film that is a uniaxially oriented film containing α-Ga2O3 as a main component, wherein a total area (C2) of peaks of a rotational domain with respect to a total area (C1) of peaks of the crystalline oxide semiconductor film, which are obtained by φ scan of X-ray diffraction measurement of an asymmetric plane of the crystalline oxide semiconductor film, is the total area (C2) of the peaks of the rotational domain being less than 5 counts with respect to 1,000,000 counts of the total area (C1) of the peaks of the crystalline oxide semiconductor film. Thereby, the crystalline oxide semiconductor film is provided that has satisfactory crystallinity in which the rotational domain is more reduced, and is useful particularly for a semiconductor device.

The present invention is a film forming method that sprays mist on a heated substrate from a nozzle to form a crystalline oxide film by a mist CVD method, wherein the nozzle for use in the method includes at least two or more opposing gas inlets, a gas mixing unit having the gas inlets, and a gas outlet from which the mist is sprayed, and a linear velocity L (cm / sec) of the mist at any one of the two or more opposing gas inlets satisfies L≥0.8V-200, wherein V (cm3) represents a volume of the gas mixing unit. This can provide a film forming method for forming a crystalline oxide film, that has excellent crystallinity and a favorable in-plane film thickness distribution even with a large area and a thin film thickness, and has excellent semiconductor properties when applied to a semiconductor device; and a film forming apparatus for performing the film forming method.

Provided a semiconductor device including: a semiconductor layer with an extended depletion layer; and an electrode disposed on the semiconductor layer directly or via another layer, the semiconductor layer including a first region containing, as a major component, a crystalline oxide semiconductor containing gallium, and a second region containing, as a major component, an oxide containing gallium, the second region including a linear crystal defect region in a cross section perpendicular to an upper surface of the semiconductor layer.

A semiconductor device having at least a crystalline oxide semiconductor layer, characterized in that the crystalline oxide semiconductor layer has a band gap of 4.5 eV or more and a field-effect mobility of 10 cm 2 / V·s or more.

A crystalline oxide thin film including In as a main component, wherein the crystalline oxide thin film includes a low-resistance region A and a high-resistance region B that have different spread resistance values measured with a scanning spread resistance microscope (SSRM) in a plane direction thereof, and the spread resistance value of the high-resistance region B is 8 times or more as large as the spread resistance value of the low-resistance region A.

An electret (1) is produced by subjecting a composite oxide containing two or more metal elements to a polarization treatment. The composite oxide is a crystalline or non-crystalline oxide containing two different trivalent metal elements A and B and has a basic composition represented by the formula A3B5O12. The composite oxide has a band gap energy of 3 eV or more. Metal element A includes at least one element selected from trivalent rare-earth elements, and metal element B includes at least one element selected from trivalent typical elements.

Grain-oriented electrical steel sheet having an aluminum borate coating able to impart larger tension that the past and a method for manufacturing grain-oriented electrical steel sheet are formed. The grain-oriented electrical steel sheet according to the present invention has a steel sheet and an insulating coating formed on the steel sheet and containing aluminum and boron, where the oxides contain crystalline oxides and a maximum value of an emission intensity ratio of boron with respect to aluminum at an interface between the insulating coating and the steel sheet, analyzed by glow discharge optical emission spectrometry, is 2.5 times or more and 4.0 times or less of the emission intensity ratio of boron with respect to aluminum in the insulating coating.

The application provides a positive electrode active material, a preparation method thereof, a positive electrode sheet, a secondary battery, a battery module, a battery pack and a power utilization device. The positive electrode active material comprises a core containing Li 1+x Mn 1‑y A y P 1‑z R z O4, a first coating layer containing crystalline pyrophosphate M a P2O7 and crystalline oxide M' b O c and a second coating layer containing carbon which coats the first coating layer. The positive electrode active material can reduce the generation of Li / Mn antisite defects, reduce manganese elution and reduce the lattice change rate, improve the capacity of the secondary battery, and improve the cycle performance, high-temperature storage performance and safety performance of the secondary battery.

A film forming method that sprays mist on a heated substrate from a nozzle to form a crystalline oxide film by a mist CVD method, wherein the nozzle for use in the method includes at least two or more opposing gas inlets, a gas mixing unit having the gas inlets, and a gas outlet from which the mist is sprayed, and a linear velocity L (cm / sec) of the mist at any one of the two or more opposing gas inlets satisfies L≥0.8V-200, wherein V (cm3) represents a volume of the gas mixing unit. Thus, a film forming method for forming a crystalline oxide film, has excellent crystallinity and a favorable in-plane film thickness distribution even with a large area and a thin film thickness, and has excellent semiconductor properties when applied to a semiconductor device; and a film forming apparatus for performing the film forming method.

A novel semiconductor device is provided. The semiconductor device includes an oxide semiconductor as a first semiconductor, silicon as a second semiconductor, and a plurality of memory cells lined up in a first direction; and a memory cell includes a writing transistor and a reading transistor. The first semiconductor and the second semiconductor extend in the first direction, part of the first semiconductor functions as a channel formation region of the writing transistor, and part of the second semiconductor functions as a channel formation region of the reading transistor. The second semiconductor includes a region in contact with a first layer containing a first metal element.

The present invention addresses the problem of providing a crystal film having excellent reliability, a laminated structure, and a semiconductor device. This crystal film comprises a gallium-containing crystalline oxide semiconductor, wherein no stain is observed when said crystal film is observed with an optical microscope or a scanning electron microscope.

The objective is to provide a semiconductor device with excellent electrical characteristics. [Solution] A semiconductor device comprising a semiconductor layer having a plurality of trenches and mesa portions between adjacent trenches, a semiconductor layer containing a crystalline oxide semiconductor containing gallium, a first electrode electrically connected to the mesa portion, a high-resistivity film along the inner surface of the trench with a higher resistivity compared to the semiconductor layer, and a second electrode located in the trench and electrically connected to the first electrode, wherein the thickness of the high-resistivity film is greater on the bottom side of the trench than on the side side.

The present disclosure provides a thin-film transistor and its fabrication process, as well as a display panel. The thin-film transistor comprises a substrate, an active layer, and a first gate electrode arranged on the substrate. The active layer comprises a first film layer and a second film layer arranged one above the other on the substrate. The second film layer is located between the first film layer and the first gate electrode. The first film layer comprises oxygen elements, the second film layer comprises a crystalline oxide, and the first and second film layers are formed by simultaneous annealing. In the thin-film transistor, annealing allows some of the oxygen elements originally present in the first film layer to penetrate into the second film layer to supplement the existing oxygen, so that the second film layer is not exposed to a high-oxygen environment (e.g.,at high oxygen partial pressure). This prevents the second film layer from making the thin-film transistor channel conductive due to an insufficient oxygen content, while it also prevents the second film layer from causing etching residue due to high etching difficulty caused by an excessive oxygen content during the etching process.

To provide semiconductor devices, electronic devices, and systems with excellent electrical properties useful for power devices and the like. [Solution] A semiconductor device comprising a laminated structure in which a second semiconductor layer having the same crystal structure as the first semiconductor layer is laminated directly or via another layer on a first semiconductor layer made of a crystalline oxide mainly composed of germanium or a mixed crystal thereof, further comprising a Schottky electrode that is Schottky bonded to the second semiconductor layer and an ohmic electrode that is ohmic bonded to the first semiconductor layer, is applied, for example, to a power device.

Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n−-type semiconductor layer that is placed on the n+-type semiconductor layer, the n−-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n−-type semiconductor layer, a depth d (μm) of the part embedded in the n−-type semiconductor layer satisfying d≥1.4; and a Schottky electrode that forms a Schottky junction with the n−-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.

To provide stable electric characteristics to a semiconductor device using an oxide semiconductor film to manufacture a highly reliable semiconductor device.SOLUTION: The subject matter is to form a crystalline oxide semiconductor film without a plurality of processes by preferentially depositing zinc having a small atomic weight on an oxide insulation film to form a zinc-containing seed crystal by utilizing a difference in atomic weights of a plurality of kinds of atoms included in an oxide semiconductor target and depositing tin, indium and the like having a large atomic weight on the seed crystal while growing crystals of tin, indium and the like. The further subject matter is to form a crystalline oxide semiconductor film of a single crystal or a substantially single crystal by growing crystals by using the seed crystal having crystals including zinc of a hexagonal crystal structure as a seed crystal to form a crystalline oxide semiconductor film.SELECTED DRAWING: Figure 1

Novel composites as antibacterial agents having crystalline oxides (TiO2 and ZnO) combined with organoselenium compounds. The organoselenium aids in increasing the biosafety of the synthesized composite, which is characterized by different physicochemical techniques. Additionally, XRD indicates that the oxide part of the introduced composite is a mixture of TiO2 as a rutile structure and ZnO as a hexagonal structure. The results confirm the successful grafting of the organoselenium compound onto the mixed oxide nanoparticles. Besides, the SEM and TEM morphology of the fabricated composites was found as heterogeneous particles that are formed as micro flowers or nanosheets according to the specific organoselenium compound used. The formed composites have a promising inhibition zone against many microorganisms and can be effective as novel antibacterial agents.

A semiconductor device includes a conductive line that extends in a first direction on a substrate, a first oxide semiconductor layer, including a first crystalline oxide semiconductor material containing a first metal element, on the conductive line, a second oxide semiconductor layer, which is in physical contact with the first oxide semiconductor layer and is connected to the conductive line, on the conductive line, a gate electrode that extends in a second direction, which crosses the first direction, on a side of the second oxide semiconductor layer, and a capacitor structure connected to the second oxide semiconductor layer on the second oxide semiconductor layer and the gate electrode, wherein the second oxide semiconductor layer includes a second crystalline oxide semiconductor material containing the first metal element and second and third metal elements, which are different from the first metal element.

Provided are a multilayer structure and a semiconductor device in which electrical characteristics are stable from the surface of the semiconductor layer to deep regions thereof. The present disclosure provides a multilayer structure comprising a first semiconductor layer and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer include a crystalline oxide containing gallium. The second semiconductor layer is disposed on the first semiconductor layer directly or via another layer. The lower limit of the carrier density at a depth of 1.0 μm or more from the surface of the second semiconductor layer is at least half of the carrier density at a depth of 1.0 μm from the surface.

The present invention is a film-forming method for forming a crystalline oxide film by a mist CVD method by supplying a carrier gas and mist to a heated substrate in a film-forming part covered by a partition wall, the method being characterized in that a gas other than the carrier gas is conveyed into the film-forming part at least during the heating of the substrate. As a result, provided is a film-forming method for forming a high-quality crystalline oxide film in which the particle density of the film surface is significantly reduced.

A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.

The present invention is a laminated structure having at least a base substrate and a crystalline oxide film containing gallium oxide as a main component, wherein an average value of reflectance of light having a wavelength of 400 to 800 nm is 16% or greater on a surface on a side of the crystalline oxide film of the laminated structure. Thus, the present invention provides a laminated structure having a crystalline oxide film containing gallium oxide as a main component with extremely few crystal defects, excellent crystallinity, and excellent semiconductor properties when applied to a semiconductor device.