58 results about "Crystalline oxide" patented technology

Provided is a laminate structure 10, including: a crystalline oxide semiconductor film 11 containing In as a main component; and an insulating film 12 laminated in contact with the crystalline oxide semiconductor film 11, wherein the crystalline oxide semiconductor film has one or more regions continuing 3 nm or more in the film thickness direction and the region has a rare gas concentration within a range of 0.5 at % or more and less than 5 at %.

A semiconductor device having at least a crystalline oxide semiconductor layer, characterized in that the crystalline oxide semiconductor layer has a band gap of 3 eV or more and a field-effect mobility of 30 cm 2 / V·s or more.

A semiconductor device includes a conductive line that extends in a first direction on a substrate, a first oxide semiconductor layer, including a first crystalline oxide semiconductor material containing a first metal element, on the conductive line, a second oxide semiconductor layer, which is in physical contact with the first oxide semiconductor layer and is connected to the conductive line, on the conductive line, a gate electrode that extends in a second direction, which crosses the first direction, on a side of the second oxide semiconductor layer, and a capacitor structure connected to the second oxide semiconductor layer on the second oxide semiconductor layer and the gate electrode, wherein the second oxide semiconductor layer includes a second crystalline oxide semiconductor material containing the first metal element and second and third metal elements, which are different from the first metal element.

A thin-film transistor and an array substrate are provided. The thin-film transistor includes a substrate and an active layer on the substrate. The active layer includes multiple layers of oxides arranged in a stacked manner; the multiple layers of oxides include a channel layer, a transition layer, and a first barrier layer; the channel layer is a layer having the maximum carrier mobility in the multiple layers of oxides; the channel layer is a crystalline oxide layer or an amorphous oxide layer; the transition layer is in direct contact with the channel layer; the first barrier layer is the outermost oxide layer among the multiple layers of oxide; the first barrier layer and the transition layer are both crystalline oxide layers; the band gap of the first barrier layer and the band gap of the transition layer are both greater than the band gap of the channel layer.

The present invention is a crystalline oxide semiconductor film that is a uniaxially oriented film containing α-Ga2O3 as a main component, wherein a total area (C2) of peaks of a rotational domain with respect to a total area (C1) of peaks of the crystalline oxide semiconductor film, which are obtained by φ scan of X-ray diffraction measurement of an asymmetric plane of the crystalline oxide semiconductor film, is the total area (C2) of the peaks of the rotational domain being less than 5 counts with respect to 1,000,000 counts of the total area (C1) of the peaks of the crystalline oxide semiconductor film. Thereby, the crystalline oxide semiconductor film is provided that has satisfactory crystallinity in which the rotational domain is more reduced, and is useful particularly for a semiconductor device.

A semiconductor device having at least a crystalline oxide semiconductor layer, characterized in that the crystalline oxide semiconductor layer has a band gap of 4.5 eV or more and a field-effect mobility of 10 cm 2 / V·s or more.

A crystalline oxide thin film including In as a main component, wherein the crystalline oxide thin film includes a low-resistance region A and a high-resistance region B that have different spread resistance values measured with a scanning spread resistance microscope (SSRM) in a plane direction thereof, and the spread resistance value of the high-resistance region B is 8 times or more as large as the spread resistance value of the low-resistance region A.

An electret (1) is produced by subjecting a composite oxide containing two or more metal elements to a polarization treatment. The composite oxide is a crystalline or non-crystalline oxide containing two different trivalent metal elements A and B and has a basic composition represented by the formula A3B5O12. The composite oxide has a band gap energy of 3 eV or more. Metal element A includes at least one element selected from trivalent rare-earth elements, and metal element B includes at least one element selected from trivalent typical elements.

The application provides a positive electrode active material, a preparation method thereof, a positive electrode sheet, a secondary battery, a battery module, a battery pack and a power utilization device. The positive electrode active material comprises a core containing Li 1+x Mn 1‑y A y P 1‑z R z O4, a first coating layer containing crystalline pyrophosphate M a P2O7 and crystalline oxide M' b O c and a second coating layer containing carbon which coats the first coating layer. The positive electrode active material can reduce the generation of Li / Mn antisite defects, reduce manganese elution and reduce the lattice change rate, improve the capacity of the secondary battery, and improve the cycle performance, high-temperature storage performance and safety performance of the secondary battery.

A film forming method that sprays mist on a heated substrate from a nozzle to form a crystalline oxide film by a mist CVD method, wherein the nozzle for use in the method includes at least two or more opposing gas inlets, a gas mixing unit having the gas inlets, and a gas outlet from which the mist is sprayed, and a linear velocity L (cm / sec) of the mist at any one of the two or more opposing gas inlets satisfies L≥0.8V-200, wherein V (cm3) represents a volume of the gas mixing unit. Thus, a film forming method for forming a crystalline oxide film, has excellent crystallinity and a favorable in-plane film thickness distribution even with a large area and a thin film thickness, and has excellent semiconductor properties when applied to a semiconductor device; and a film forming apparatus for performing the film forming method.

A novel semiconductor device is provided. The semiconductor device includes an oxide semiconductor as a first semiconductor, silicon as a second semiconductor, and a plurality of memory cells lined up in a first direction; and a memory cell includes a writing transistor and a reading transistor. The first semiconductor and the second semiconductor extend in the first direction, part of the first semiconductor functions as a channel formation region of the writing transistor, and part of the second semiconductor functions as a channel formation region of the reading transistor. The second semiconductor includes a region in contact with a first layer containing a first metal element.

The objective is to provide a semiconductor device with excellent electrical characteristics. [Solution] A semiconductor device comprising a semiconductor layer having a plurality of trenches and mesa portions between adjacent trenches, a semiconductor layer containing a crystalline oxide semiconductor containing gallium, a first electrode electrically connected to the mesa portion, a high-resistivity film along the inner surface of the trench with a higher resistivity compared to the semiconductor layer, and a second electrode located in the trench and electrically connected to the first electrode, wherein the thickness of the high-resistivity film is greater on the bottom side of the trench than on the side side.

The present disclosure provides a thin-film transistor and its fabrication process, as well as a display panel. The thin-film transistor comprises a substrate, an active layer, and a first gate electrode arranged on the substrate. The active layer comprises a first film layer and a second film layer arranged one above the other on the substrate. The second film layer is located between the first film layer and the first gate electrode. The first film layer comprises oxygen elements, the second film layer comprises a crystalline oxide, and the first and second film layers are formed by simultaneous annealing. In the thin-film transistor, annealing allows some of the oxygen elements originally present in the first film layer to penetrate into the second film layer to supplement the existing oxygen, so that the second film layer is not exposed to a high-oxygen environment (e.g.,at high oxygen partial pressure). This prevents the second film layer from making the thin-film transistor channel conductive due to an insufficient oxygen content, while it also prevents the second film layer from causing etching residue due to high etching difficulty caused by an excessive oxygen content during the etching process.

To provide semiconductor devices, electronic devices, and systems with excellent electrical properties useful for power devices and the like. [Solution] A semiconductor device comprising a laminated structure in which a second semiconductor layer having the same crystal structure as the first semiconductor layer is laminated directly or via another layer on a first semiconductor layer made of a crystalline oxide mainly composed of germanium or a mixed crystal thereof, further comprising a Schottky electrode that is Schottky bonded to the second semiconductor layer and an ohmic electrode that is ohmic bonded to the first semiconductor layer, is applied, for example, to a power device.

To provide stable electric characteristics to a semiconductor device using an oxide semiconductor film to manufacture a highly reliable semiconductor device.SOLUTION: The subject matter is to form a crystalline oxide semiconductor film without a plurality of processes by preferentially depositing zinc having a small atomic weight on an oxide insulation film to form a zinc-containing seed crystal by utilizing a difference in atomic weights of a plurality of kinds of atoms included in an oxide semiconductor target and depositing tin, indium and the like having a large atomic weight on the seed crystal while growing crystals of tin, indium and the like. The further subject matter is to form a crystalline oxide semiconductor film of a single crystal or a substantially single crystal by growing crystals by using the seed crystal having crystals including zinc of a hexagonal crystal structure as a seed crystal to form a crystalline oxide semiconductor film.SELECTED DRAWING: Figure 1

The present invention is a laminated structure having at least a base substrate and a crystalline oxide film containing gallium oxide as a main component, wherein an average value of reflectance of light having a wavelength of 400 to 800 nm is 16% or greater on a surface on a side of the crystalline oxide film of the laminated structure. Thus, the present invention provides a laminated structure having a crystalline oxide film containing gallium oxide as a main component with extremely few crystal defects, excellent crystallinity, and excellent semiconductor properties when applied to a semiconductor device.

Provided is a laminate structure, including: a crystalline oxide semiconductor film containing In as a main component; and an insulating film laminated to form an interface with the crystalline oxide semiconductor film, wherein the laminate structure has a region that satisfies the following formula (1) in the insulating film having a thickness extending from the interface to a distance approximately equal to a thickness of the crystalline oxide semiconductor film:1.25≤(average⁢ value⁢ of⁢ A / B)≤1.75(1)where A represents the number of oxygen atoms, and B represents the number of cation atoms that exist in a state of being bonded to the oxygen atoms, the cation atoms being cationic atomic species contained in the laminate structure in an amount of 1 at % or more.

Provided is a highly reliable semiconductor device. This transistor has a first conductive layer, a second conductive layer, a first insulating layer, a first semiconductor layer, a second insulating layer, and a third conductive layer. The semiconductor layer has a crystalline oxide semiconductor layer that contains indium and oxygen. The oxide semiconductor layer has properties for transmitting oxygen at 2 × 1020 atoms / cm3 to 1 × 1021 atoms / cm3 in a heat treatment in which the heating temperature is 400°C and the treatment time is 8 hours. The oxide semiconductor layer also has properties such that a deuterium diffusion amount integral value thereof is 5 × 1012 atoms / cm2 to 1 × 1014 atoms / cm2 in a heat treatment in which the heating temperature is 200°C and the treatment time is 8 hours.

The purpose of the present invention is to provide a crystalline oxide film, a thin film transistor, and an electronic apparatus that can control hysteresis. The present disclosure relates to a crystalline oxide film that contains In as a principal component and also contains at least two elements selected from the group that consists of Ga, Al, and Y and at least one element selected from the group that consists of Ce, Tb, Nd, Mn, Ru, Pd, and Pt.

A laminated structure includes a crystalline substrate and a crystalline oxide film containing gallium as a main component and having a β-gallia structure, wherein the crystalline substrate is a crystalline substrate containing lithium tantalate as a main component. This provides an inexpensive laminated structure having a thermally stable crystalline oxide film.

The present disclosure provides a thin film transistor, a preparation method thereof, and a display panel. The thin film transistor includes an active layer and a first gate electrode located on a base substrate, the active layer includes a first film layer and a second film layer stacked on the base substrate, the second film layer is located between the first film layer and the first gate electrode, the first film layer includes oxygen element, the second film layer includes crystalline oxide, and the first film layer and the second film layer are formed via synchronous annealing. This approach not only prevents the thin film transistor channel from conducting due to insufficient oxygen content in the second film layer but also avoids issues such as etching residues caused by difficulties in etching the second film layer due to excessive oxygen content during the etching process.

The embodiment of the invention provides a transistor and a preparation method thereof, a memory array, a memory and electronic equipment, relates to the technical field of semiconductors, and aims to ensure the gate control capability of the transistor while reducing the parasitic resistance of the transistor. The transistor comprises a substrate, a first electrode, a first insulating layer, a grid electrode, a second insulating layer, a grid dielectric layer, an auxiliary electrode, a channel structure and a second electrode. The auxiliary electrode is located on one side of the first electrode away from the substrate. The auxiliary electrode includes a first sub-portion and a second sub-portion. The second sub-part is located on the side, away from the substrate, of the first sub-part. The first sub-part is located between the gate dielectric layer and the first electrode, and the distance from the surface, away from the substrate, of the second sub-part to the substrate is larger than the distance from the surface, close to the substrate, of the first insulating layer to the substrate. The material of the auxiliary electrode includes a crystalline oxide semiconductor or a crystalline oxide conductor. The transistor is applied to the electronic equipment to improve the performance of the electronic equipment.

A metal composite oxide of the present invention is a metal composite oxide containing iridium, ruthenium, and a third metal (M), in which the third metal (M) is one or more elements selected from the group consisting of Group 2 elements, Group 13 elements, Group 14 elements, and transition metals, and the metal composite oxide is a low crystalline oxide or an amorphous oxide.

The present invention is a laminated structure that has at least a base substrate and a crystalline oxide film having gallium oxide as the main component, wherein the average reflectance of light at a wavelength of 400-800 nm is 16% or more on the crystalline oxide film side surface of the laminated structure. Thus, provided is a laminated structure that has a crystalline oxide film having gallium oxide as the main component, that has excellent crystallinity with very few crystal defects, and that has excellent semiconductor characteristics when applied to a semiconductor device.

A semiconductor device includes: a substrate; a bit line above the substrate; a channel pattern on the bit line extending in a direction perpendicular to an upper surface of the bit line; a word line intersecting the bit line and spaced apart from the channel pattern; a gate insulating pattern between the channel pattern and the word line; an insulating pattern on the word line; and a landing pad connected to the channel pattern. The channel pattern includes first, second, and third channel patterns that are sequentially stacked, the first channel pattern is connected to the bit line, the second channel pattern is between the first channel pattern and the third channel pattern, the third channel pattern is connected to the landing pad, the first channel pattern and the third channel pattern include a crystalline oxide semiconductor material, and the second channel pattern includes an amorphous oxide semiconductor material.

A film-forming method for forming a crystalline oxide film by a mist-CVD method includes: supplying a mist together with a carrier gas onto a heated substrate in a film-forming member covered with a partition wall, wherein, in at least heating the substrate, a gas other than the carrier gas is fed into the film-forming member. This provides a film-forming method to form a high-quality crystalline oxide film having a remarkably reduced particle density on a film surface.

A film formation method having an excellent mass productivity, whereby a time required for forming a film having a desired thickness is short. In the film formation method, the following steps are performed: atomizing or dropletizing a liquid containing a metal complex, the liquid being raw material solution, conveying resulting mist or droplets to a base by a carrier gas, and forming a metal oxide file on the base by thermally reacting the mist or droplets in the vicinity of the base, the metal oxide film comprising a crystalline oxide semiconductor. A metal complex is used, which shows an exothermic peak at 480° C. to 520° C. in a thermogravimetric-differential thermal analysis at a temperature increase rate of 20° C. / min under an oxygen-containing atmosphere.

A plasma in-flight process and apparatus for producing amorphous silica, alumina, and titania from solid crystalline oxide feedstocks is disclosed. The method utilizes a plasma torch to directly melt feedstock materials—such as quartz, bauxite, or titanium minerals— within a plasma plume inside a reactor. Downstream of the torch, a quenching system based on injected air, nitrogen, or argon rapidly cools the molten particles to prevent recrystallization and promote the formation of amorphous oxide powders. The reactor system includes a gas outlet and collection system to recover both micro- and nano-sized particles. The process eliminates the need for chemical precursors, solvents, or carbon reductants and offers a single-step, emission-free, and energy-efficient method for producing high-performance amorphous materials at industrial scale.

The present invention is a crystalline oxide film containing gallium as a main component, in which when CuKα rays are made incident on the crystalline oxide film to perform X-ray diffraction, a reflection output in scanning ω and 2θ has a local maximum point when 16.20°<2θ<39.90° and 20.30°<ω<32.20° at an angle ϕ around a ϕ axis orthogonal to a surface of the crystalline oxide film at the angle ϕ where a peak attributable to the crystalline oxide film by ω-2θ measurement is maximum, and 40.10°<ω+θ<40.40° relative to ω and θ at which the reflection output reaches a maximum is satisfied. This provides the crystalline oxide film, a laminated structure, a semiconductor device with excellent semiconductor properties, particularly excellent withstand voltage, and a method for producing a crystalline oxide film.

The present invention relates to a crystal, a semiconductor element, a semiconductor device, and a semiconductor system. The present invention provides a crystal useful for a semiconductor element and a semiconductor element excellent in electrical characteristics. A semiconductor element is produced using a crystal having a corundum structure and including a crystalline oxide containing gallium and / or indium as a main component, characterized in that the crystalline oxide further includes a metal of Group 4 of the periodic table, a semiconductor device such as a power card is produced from the produced semiconductor element, and a semiconductor system is constructed from these semiconductor elements or semiconductor devices.