13 results about "Crystalline oxide" patented technology

A thin-film transistor and an array substrate are provided. The thin-film transistor includes a substrate and an active layer on the substrate. The active layer includes multiple layers of oxides arranged in a stacked manner; the multiple layers of oxides include a channel layer, a transition layer, and a first barrier layer; the channel layer is a layer having the maximum carrier mobility in the multiple layers of oxides; the channel layer is a crystalline oxide layer or an amorphous oxide layer; the transition layer is in direct contact with the channel layer; the first barrier layer is the outermost oxide layer among the multiple layers of oxide; the first barrier layer and the transition layer are both crystalline oxide layers; the band gap of the first barrier layer and the band gap of the transition layer are both greater than the band gap of the channel layer.

An electret (1) is produced by subjecting a composite oxide containing two or more metal elements to a polarization treatment. The composite oxide is a crystalline or non-crystalline oxide containing two different trivalent metal elements A and B and has a basic composition represented by the formula A3B5O12. The composite oxide has a band gap energy of 3 eV or more. Metal element A includes at least one element selected from trivalent rare-earth elements, and metal element B includes at least one element selected from trivalent typical elements.

The objective is to provide a semiconductor device with excellent electrical characteristics. [Solution] A semiconductor device comprising a semiconductor layer having a plurality of trenches and mesa portions between adjacent trenches, a semiconductor layer containing a crystalline oxide semiconductor containing gallium, a first electrode electrically connected to the mesa portion, a high-resistivity film along the inner surface of the trench with a higher resistivity compared to the semiconductor layer, and a second electrode located in the trench and electrically connected to the first electrode, wherein the thickness of the high-resistivity film is greater on the bottom side of the trench than on the side side.

To provide semiconductor devices, electronic devices, and systems with excellent electrical properties useful for power devices and the like. [Solution] A semiconductor device comprising a laminated structure in which a second semiconductor layer having the same crystal structure as the first semiconductor layer is laminated directly or via another layer on a first semiconductor layer made of a crystalline oxide mainly composed of germanium or a mixed crystal thereof, further comprising a Schottky electrode that is Schottky bonded to the second semiconductor layer and an ohmic electrode that is ohmic bonded to the first semiconductor layer, is applied, for example, to a power device.

A laminated structure includes a crystalline substrate and a crystalline oxide film containing gallium as a main component and having a β-gallia structure, wherein the crystalline substrate is a crystalline substrate containing lithium tantalate as a main component. This provides an inexpensive laminated structure having a thermally stable crystalline oxide film.

A semiconductor device includes: a substrate; a bit line above the substrate; a channel pattern on the bit line extending in a direction perpendicular to an upper surface of the bit line; a word line intersecting the bit line and spaced apart from the channel pattern; a gate insulating pattern between the channel pattern and the word line; an insulating pattern on the word line; and a landing pad connected to the channel pattern. The channel pattern includes first, second, and third channel patterns that are sequentially stacked, the first channel pattern is connected to the bit line, the second channel pattern is between the first channel pattern and the third channel pattern, the third channel pattern is connected to the landing pad, the first channel pattern and the third channel pattern include a crystalline oxide semiconductor material, and the second channel pattern includes an amorphous oxide semiconductor material.

The objective is to provide semiconductor devices that are less prone to malfunctions. [Solution] A semiconductor device comprising a semiconductor layer having a plurality of trenches and mesa portions between adjacent trenches, and containing a crystalline oxide semiconductor containing gallium; a first electrode electrically connected to the mesa portion; a high-resistance film along the inner surface of the trenches; a second electrode located within the trenches and electrically connected to the first electrode; and a carrier discharge portion in contact with the second electrode and the bottom surface of the trenches, for discharging carriers to the second electrode.

The purpose of the present disclosure is to provide a crystalline oxide semiconductor film having high carrier mobility.　An oxide semiconductor film according to one aspect of the present disclosure is disposed on a substrate, said oxide semiconductor film comprising In as an element and having a grain boundary line density of not more than 27 / μm, wherein the grain boundary line density is a value found by EBSD analysis in which a boundary having an orientation difference of 2° or greater is considered a grain boundary.

The invention provides a semiconductor device, an electronic apparatus, and a system, which are useful for power devices and the like and have excellent electrical characteristics. A semiconductor device is used, for example, to be applied to a power device or the like, and includes a laminated structure that includes a first semiconductor layer containing a crystalline oxide containing germanium or a mixed crystal thereof as a main component and a second semiconductor layer containing a crystalline oxide containing germanium or a mixed crystal thereof as a main component. A semiconductor device in which a second semiconductor layer having the same crystal structure as the first semiconductor layer is laminated directly or via another layer, the semiconductor device further comprising: a Schottky electrode that is Schottky-bonded to the second semiconductor layer; and an ohmic electrode ohmically bonded to the first semiconductor layer.

To provide a semiconductor device, an electronic device, and a system that are useful in a power device or the like and have superior electrical characteristics. A semiconductor device including a laminated structure in which a second semiconductor layer having a same crystal structure as a first semiconductor layer constituted of a crystalline oxide containing germanium or a mixed crystal of germanium as a main component is laminated directly or via another layer on the first semiconductor layer, the semiconductor device further including a Schottky electrode forming a Schottky junction with the second semiconductor layer and an ohmic electrode forming an ohmic junction with the first semiconductor layer, the semiconductor device being used and applied to, for example, a power device.

[Problem] To provide a semiconductor device, an electronic apparatus, and a system having excellent electric characteristics useful for a power device or the like. [Solution] This semiconductor device has a laminated structure that includes a first semiconductor layer composed of a crystalline oxide containing germanium or a mixed crystal thereof as a main component, and a second semiconductor layer laminated on the first semiconductor layer directly or via another layer, the second semiconductor layer having the same crystal structure as the first semiconductor layer. The second semiconductor layer is an n- layer having a carrier concentration of 1×1018cm-3 or less, and the first semiconductor layer is an n+ layer having a carrier concentration of 5×1018cm-3 or more. The semiconductor device is applied to, for example, a power device or the like.

The present application provides a positive electrode active material, a method for manufacturing the same, a positive electrode plate, a secondary battery, a battery module, a battery pack, and an electrical device; the positive electrode active material comprises a core containing Li1+xMn1-yAyP1-zRzO4, a first coating layer containing crystalline pyrophosphate LiaMP2O7 and / or Mb(P2O7)c coating the core, a second coating layer containing crystalline oxide M′dOe coating the first coating layer, and a third coating layer containing carbon coating the second coating layer. The positive electrode active material of the present application can reduce the occurrence of Li / Mn antisite defects, reduce manganese leaching, and lower the crystal lattice change rate, improve the capacity of the secondary battery, and improve the cycle performance, high-temperature storage performance, and safety performance of the secondary battery.