61 results about "Hexagonal crystals" patented technology

A bilayer film of a magnetic body and an insulator has an antiferromagnetic layer having a hexagonal crystal structure and at least one surface of which is the (10-10) surface of an antiferromagnetic body, and an insulator layer containing two or three or four atoms laminated on the (10-10) surface of the antiferromagnetic layer. A bilayer film of a magnetic body and an insulator has an antiferromagnetic layer having a hexagonal crystal structure and at least one surface of which is the (0001) surface of an antiferromagnetic body, and an insulator layer containing two or three or four atoms laminated on the (0001) surface of the antiferromagnetic layer. The tunneling magnetoresistive element has a second antiferromagnetic film layer laminated on the insulator of the bilayer film. The magnetic memory includes a plurality of the tunneling magnetoresistive elements.

The present invention pertains to lithium-nickel-manganese composite oxide particles are for use in a positive electrode active material for a lithium-ion secondary battery, and the lithium-nickel-manganese composite oxide particles include secondary particles formed by the aggregation of primary particles containing a lithium-nickel-manganese composite oxide having a hexagonal crystal structure with a layered structure. The secondary particles each have a hollow structure including an outer shell portion and a hollow portion formed inside the outer shell portion. The lithium-nickel-manganese composite oxide particles include, as 20% or more of the total number of the secondary particles, through‑hole-containing secondary particles that each have a through‑hole which has an average diameter of 20 nm or more and penetrates the outer shell portion from the outside of the outer shell portion to the hollow portion.

1. Name of the product in this design: Inductive switch (hexagonal crystal). 2. Application of this design: This design is used for intelligent switches. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: a 3D model.

The application relates to a novel lithium ion battery layered sulfide positive electrode material, which has a general formula of Li 1.33‑0.33x V x Ti 0.67‑0.67x S2, and 0<=x<=0.5. The positive electrode material belongs to a hexagonal crystal structure of O3 type, and a corresponding space group is P63 / mmc. The micro-morphology of the positive electrode material is granular, the particle size is about 20-50 mu m, and each element is uniformly distributed on the particle surface and inside. In the positive electrode material, almost all the capacity comes from the redox reaction of sulfur, and the capacity contribution of vanadium can be ignored. Electrochemical test and solid-state nuclear magnetic characterization results show that the Li 1.27 V 0.2 Ti 0.53 S2 positive electrode material has a reversible capacity of up to 308 mAh g ‑1 , and realizes reversible deintercalation of all Li + in the system. Meanwhile, the material exhibits extremely excellent rate and cycle performance, has a capacity retention rate of 81.0% after 4300 cycles of long cycle, and has almost no voltage attenuation in the cycle process.

The objective is to provide a heat-shielding composition that includes a dispersion powder that can be converted into an aqueous dispersion using water as a dispersion medium by adding water. [Solution] A nonionic polymer dispersant and A crystal with a hexagonal crystal structure, general formula M x WO y (However, element M includes one or more elements selected from Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, and satisfies 0.1 ≤ x ≤ 1.0 and 2.0 ≤ y < 4.0) Composite tungsten oxide particles containing composite tungsten oxide, A heat-shielding composition comprising polycarbonate resin or acrylic resin.

The invention discloses a method for preparing complex silicon-carbon-containing solid waste into multi-type silicon carbide or multi-structure graphene based on instantaneous carbon thermal shock selective regulation and control. The method comprises the following steps: putting the complex silicon-carbon-containing solid waste into a graphite reactor; current is applied to the graphite reactor through Joule heating for flash evaporation treatment, the temperature range of the flash evaporation treatment is 1500-2800 DEG C, and the heating rate is larger than 400 DEG C / s; by cooperatively controlling the intensity of the applied current, the flash evaporation temperature and the flash evaporation time, the complex silicon-carbon-containing solid waste is converted into a target product; the target product comprises at least one of cubic crystal form 3C-SiC, hexagonal crystal form 6H-SiC, turbine layered graphene and hybrid AB-turbine layered graphene. According to the method, the non-equilibrium dynamic principle is utilized, the problems that a traditional recycling method is difficult to cooperatively treat complex solid waste, low in product value and single in type are effectively solved, high-selectivity and high-valued conversion of the waste is achieved, the technological process is simple, energy is saved, environment friendliness is achieved, and a new way is provided for solid waste recycling.

The solid electrolyte has: first crystallites formed on primary particles and having a first crystal structure; a second crystallite formed in the same primary particle as the first crystallite and having a second crystal structure different from the first crystal structure; and an amorphous phase, the first crystallites and the second crystallites each contain lithium, the first crystal structure is a hexagonal crystal, the second crystal structure is an orthorhombic crystal, and both the crystallite size of the first crystallites and the crystallite size of the second crystallites are 50 nm or less.

Electromagnetic wave absorbing particles including cesium tungsten oxide represented by a general formula CsxW1-yO3-z (0.2≤x≤0.4, 0<y≤0.4, and 0<z≤0.46) and having an orthorhombic crystal structure or a hexagonal crystal structure are provided.

A coated cutting tool is provided with a hard coating film on a base material. The hard coating film is composed of a nitride or carbonitride containing 50 at% to 70 at% (inclusive) of Al, 20 at% to 50 at% (inclusive) of Cr, and 4 at% to 15 at% (inclusive) of Si with respect to the total amount of metal including semimetal. The atomic ratio (at%) A of a metal element including a semimetal and the atomic ratio (at%) B of nitrogen in the hard coating satisfy 1.07 lt; b / Alt; 1.30, 1.30. The hard coating film exhibits a maximum peak intensity caused by a (200) plane or a (111) plane of a cubic crystal in an intensity distribution determined from an X-ray diffraction pattern or a selected area diffraction pattern of a transmission electron microscope, and does not have a peak mainly composed of a hexagonal crystal in the intensity distribution determined from the selected area diffraction pattern.

This invention belongs to the field of magnetic refrigeration technology, specifically relating to the application of a hexagonal crystal material Sr6GdSc(BO3)6 in ultra-low temperature magnetic refrigeration. This hexagonal crystal material Sr6GdSc(BO3)6 does not undergo a phase transition at temperatures above 100 mK and exhibits a large magnetocaloric effect near 1 K. The maximum magnetic entropy changes under magnetic field variations of 0–1 T, 0–2 T, and 0–3 T are 39.36 mJ·cm⁻¹, respectively. ‑3 · K ‑1 Or 9.01 J·kg ‑1 ·K ‑1 53.95 mJ·cm ‑3 ·K ‑1 Or 12.34 J·kg ‑1 ·K ‑1 and 59.49 mJ·cm ‑3 ·K ‑1 Or 13.61 J·kg ‑1 ·K ‑1 The hexagonal crystal material Sr6GdSc(BO3)6 of this invention exhibits significant magnetocaloric effects and superior low-temperature performance, and has great application prospects in the field of ultra-low temperature magnetic refrigeration technology.

The invention relates to an easy-to-activate AB5 type multi-element doped modified hydrogen storage material and a preparation method and application thereof, the chemical general formula of the hydrogen storage material is LaxCeyNdzNiaFebMnc, x + y + z = 1, x is greater than or equal to 0.5, y is greater than or equal to 0 and less than or equal to 0.5, and z is greater than or equal to 0 and less than or equal to 0.5; a + b + c = 5, a > = 4, 0 < = b < = 1, 0 < = c < = 1, and at least two of y, z, b and c are not equal to 0. Compared with the prior art, the single-phase AB5 type hydrogen storage alloy with a hexagonal crystal form is prepared by synergistically replacing A site (La) by Ce / Nd and replacing B site (Ni) by Fe / Mn according to a specific proportion, the alloy has relatively high hydrogen storage capacity and rapid hydrogen absorption and desorption dynamic performance, the hysteresis of a hydrogen absorption and desorption platform is obviously improved, and rapid hydrogen absorption and the like can be completed without hydrogen absorption and desorption activation.

The invention relates to a group III-V semiconductor material, which has a metastable hexagonal crystal structure, in the form of a thin film up to 1µm thick. Figure 1.

The invention relates to a semiconductor nitride film material and a preparation method thereof, and belongs to the technical field of semiconductor film materials. The semiconductor nitride thin film material comprises the following components: a compound with a chemical formula of Al < 1-x > Si < x > N < 1-y > O < y >, the compound is a hexagonal system, and the crystal space group is P63mc. The preparation method of the semiconductor nitride thin film material comprises the following steps: cleaning a substrate; according to the method, Al or Al and Si are used as a target material, the target material is sputtered in a high-power pulse magnetron sputtering mode in an argon and nitrogen mixed gas environment, and the semiconductor nitride thin film material is deposited on a substrate. The semiconductor nitride film material has excellent insulativity, thermal stability, wear resistance and hydrophobicity at the same time, and can meet application requirements in various complex environments.

The invention provides a Pt-Co / ZnO catalyst, a preparation method and application thereof, and a method for synthesizing alcohol from carbon dioxide, the catalyst contains a carrier, an active component and an auxiliary agent, the carrier is a ZnO nanorod, the active component comprises Co, the auxiliary agent comprises Pt, the ZnO nanorod in the catalyst is in a hexagonal crystal form, and the auxiliary agent comprises Pt. Co epitaxially grows on the {100} crystal face of the ZnO nanorod to form a coating layer. The Pt-Co / ZnO catalyst with a clear structure is synthesized by utilizing lattice matching, and has good hydrogenation activity, for example, in a reaction for synthesizing alcohol through carbon dioxide hydrogenation, when the air speed is 6L. Gcat <-1 >. H <-1 >, the pressure is 2MPa, the activation temperature is 250 DEG C and the reaction temperature is 300 DEG C, the CO2 conversion rate can reach 20.1%, and the STY value of the alcohol is 5.6 mmol.gcat <-1 >. H <-1 >.

This application relates to the fields of petroleum processing catalysts and solid waste resource utilization technology, specifically disclosing an iron sulfide catalyst for heavy oil hydrocracking and its application. The active component of this iron sulfide catalyst for heavy oil hydrocracking includes non-stoichiometric iron sulfide Fe obtained from coal combustion dust through magnetic separation. 1‑x S, where x ≤ 0.2. The iron sulfide catalyst Fe for heavy oil hydrocracking of this application. 1‑x S has a unique hexagonal crystal structure and surface properties. When used as a catalyst for heavy oil hydrocracking, it has significantly better catalytic efficiency than traditional hydrocracking catalysts, lower cost, longer service life, and stronger resistance to carbon buildup.

The antiferromagnetic material has a hexagonal crystal structure and has an antiferromagnetic layer containing Mn3A1-xBx (0lt, xlt, 0.5, A = Ga, Ge, Sn, B = Mg, Al, Si, P, Mn, Ni, Cu, Zn, As, Ru, Ag, Cd, In, Sb, Os, Au, Hg, T1, Pb) or (Mn1-pCrp) 3GaqGerSn1-q-r (0lt, plt, 0.5, 0lt, qlt, 1, 0lt, rlt, 1, 0lt, q + r < = 1), and an insulator layer laminated on the surface of the antiferromagnetic layer. It is preferable that A is Ga and / or Sn. In addition, it is preferable that B is at least one of Mg, Al, Si, Mn, Cu, Zn, Ag, Cd, In, Sb, Au, and Tl.

The invention discloses a method for preparing seed crystals and directionally growing hexagonal crystal system crystals such as lanthanum bromide, chlorine-lanthanum bromide, lanthanum chloride and cerium bromide by utilizing the hexagonal crystal system crystals which are easy to grow and process, such as lanthanum chloride, cerium bromide and the like, and the hexagonal crystal system crystals which are easy to process in the method comprise the lanthanum chloride crystals, the cerium bromide crystals and the like. The hexagonal crystal system grown by the method comprises hexagonal crystal systems such as lanthanum bromide, chlorine-lanthanum bromide, lanthanum chloride, cerium bromide and the like. According to the invention, the raw material cost and the processing cost can be obviously reduced in the preparation process of the crystal growth seed crystal.

The application discloses a preparation method of a bidirectional shape memory elastomer based on solid-solid phase transition construction and belongs to the shape memory polymer material field. The bidirectional shape memory elastomer is prepared from a multi-crystal trans-1,4-polybutadiene with monoclinic phase and hexagonal phase through chemical cross-linking, wherein the low-temperature crystal type is monoclinic crystal, the high-temperature crystal type is hexagonal crystal, the monoclinic crystal is converted into hexagonal crystal through a solid-solid phase transition process when being heated to 40-65 DEG C, and the melting temperature of the hexagonal crystal is 90-110 DEG C; the elastomer can produce reversible crystalline solid-solid phase transition with the change of the ambient temperature, so that the shape memory behavior is realized. The bidirectional shape memory behavior elastomer is prepared based on the solid-solid phase transition of the multi-crystal polymer. The thermal history can be completely eliminated above the melting temperature, the cyclic use and reprogramming are realized. The preparation process is simple, and the large-scale preparation is facilitated.

This dispersion powder contains a nonionic polymer dispersant and composite tungsten oxide particles that have a hexagonal crystal structure and are represented by general formula MxWOy (wherein, M element includes one or more kinds of elements selected from among Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, and Ra, and 0.1≤x≤1.0 and 2.0≤y<4.0 are satisfied).

To provide stable electric characteristics to a semiconductor device using an oxide semiconductor film to manufacture a highly reliable semiconductor device.SOLUTION: The subject matter is to form a crystalline oxide semiconductor film without a plurality of processes by preferentially depositing zinc having a small atomic weight on an oxide insulation film to form a zinc-containing seed crystal by utilizing a difference in atomic weights of a plurality of kinds of atoms included in an oxide semiconductor target and depositing tin, indium and the like having a large atomic weight on the seed crystal while growing crystals of tin, indium and the like. The further subject matter is to form a crystalline oxide semiconductor film of a single crystal or a substantially single crystal by growing crystals by using the seed crystal having crystals including zinc of a hexagonal crystal structure as a seed crystal to form a crystalline oxide semiconductor film.SELECTED DRAWING: Figure 1

An underlying substrate for a single crystal diamond laminate substrate, the underlying substrate including an initial substrate being any of a single crystal Si substrate, a single crystal α-Al2O3 substrate, etc., and an intermediate layer on the initial substrate, in which an outermost surface on the initial substrate has an off angle in a crystal axis <−1-12> direction relative to a cubic crystal plane orientation, or has an off angle in a crystal axis <10-10> or <11-20> direction relative to a hexagonal crystal plane orientation, etc. This provides the underlying substrate capable of forming a single crystal diamond layer having a large area (large diameter), high crystallinity, few hillocks, few abnormal growth particles such as twin crystals, few dislocation defects, etc., high purity, low stress, and high quality and applicable to an electronic and magnetic device.

The invention discloses tungsten oxide-based functional ink, a preparation method thereof, an electrochromic film and a device. The method comprises the following steps: adding deionized water into tungstic acid, and stirring; after stirring, adding sodium hydroxide and continuously stirring to obtain a precursor solution; adjusting the Ph value of the precursor solution to be 0.5-2; a precipitation product is separated from the precursor solution after the pH value is adjusted; carrying out microwave-assisted heating on the precipitation product to obtain tungsten oxide nanoparticles with a hexagonal crystal structure; and crushing the tungsten oxide nanoparticles, adding deionized water and isopropanol, stirring, and carrying out ultrasonic treatment to obtain the tungsten oxide-based functional ink. According to the tungsten oxide-based functional ink prepared by the method, the temperature of a film coating process can be remarkably reduced, excellent ion intercalation / deintercalation kinetics and stable electrochemical cycle performance of the tungsten oxide-based functional ink are ensured, and a feasible material and process path is provided for efficient, low-temperature and large-area manufacturing of an electrochromic device.

Method for the production of a Mo—N-based coating structure, including: providing a substrate to be coated and applying a hard material layer on the substrate, wherein the hard material layer includes at least one layer of Mo—N having a hexagonal crystal structure and at least one layer of Mo—N having a cubic crystal structure or a mixed hexagonal / cubic crystal structure, wherein the hard material layer is applied by a low temperature closed field unbalanced reactive magnetron sputtering coating process.

A crystalline IZTO oxide semiconductor and a thin film transistor having the same are provided. The thin film transistor includes a gate electrode, a crystalline In—Zn—Sn oxide (IZTO) channel layer overlapping the upper or lower portions of the gate electrode and having hexagonal crystal grains, and a gate insulating layer disposed between the gate electrode and the IZTO channel layer, and source and drain electrodes respectively connected to both ends of the IZTO channel layer.

The application provides a preparation method of a layered nano-heterogeneous high-strength and high-toughness magnesium alloy plate based on centrifugal casting, and the method comprises the following steps: smelting a first magnesium alloy material to obtain a first magnesium alloy solution, and smelting a second magnesium alloy material to obtain a second magnesium alloy solution; alternately performing centrifugal casting by using the first magnesium alloy solution and the second magnesium alloy solution; sequentially performing solid solution, water quenching, hot rolling and cold rolling treatment to obtain a multi-layer magnesium alloy plate; sequentially performing recrystallization annealing treatment and aging treatment to obtain a layered nano-heterogeneous magnesium alloy plate; and the layered nano-heterogeneous magnesium alloy plate comprises a nano-platelet-shaped Mg 17 Al 12 phase precipitated along a basal plane of a close-packed hexagonal crystal structure, and a disc-shaped nano-beta' phase precipitated along a column surface of the close-packed hexagonal crystal structure. The method has great flexibility and directionality in microstructure design, and can prepare a series of layered heterogeneous magnesium alloys, which have the characteristics of high toughness, high strength and excellent high-temperature creep resistance.

The invention relates to the technical field of petroleum processing catalysts and solid waste recycling, and particularly discloses an iron sulfide catalyst for heavy oil hydrocracking and application of the iron sulfide catalyst. The invention relates to an iron sulfide catalyst for hydrocracking heavy oil, the active component of the iron sulfide catalyst comprises non-stoichiometric iron sulfide Fe < 1-x > S obtained by magnetic separation from coal combustion dust, and x is less than or equal to 0.2. The iron sulfide catalyst Fe < 1-x > S for hydrocracking of heavy oil has a unique hexagonal crystal structure and surface properties, has the catalytic efficiency obviously superior to that of a traditional hydrocracking catalyst when being used as a catalyst for a hydrocracking reaction of heavy oil, and has the advantages of lower cost, longer service life and stronger carbon deposition resistance.

This invention discloses a magnetically conductive plate assembly, a sound-generating device, and an electronic device, relating to the field of acoustic technology. The magnetically conductive plate assembly includes a body and a plating layer disposed on the surface of the body. The plating layer is primarily a polycrystalline material composed of Ni and Co elements. The polycrystalline material has at least one of a face-centered cubic structure and a close-packed hexagonal crystal structure. The average grain size of the plating layer is 0.01~15 μm, and the self-corrosion potential of the plating layer in a 3.5 wt.% NaCl solution is -0.7~-0.1 V. The magnetically conductive plate assembly of this invention aims to solve the technical problem of improving the magnetic permeability of the magnetically conductive plate assembly while ensuring its corrosion resistance.

This dispersed powder comprises: a cationic surfactant; and composite tungsten oxide particles having a hexagonal crystal structure and represented by the general formula MxWOy (where the M element includes at least one element selected from among Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, and Ra, and 0.1≤x≤1.0 and 2.0≤y<4.0 are satisfied).

The invention aims to provide a method for preparing selenium nanoparticles by a low-temperature chemical method and application of the selenium nanoparticles in the field of functional materials. The selenium nanoparticle material disclosed by the invention has a stable hexagonal crystal mechanism; the raw material for preparing the selenium nanoparticles by the chemical solution method is selenium dioxide, and the used reducing agent is organic amine such as tetraethylenepentamine. The yield of the selenium nanoparticles prepared from tetraethylenepentamine at room temperature reaches 88%, and the selenium nanoparticles with the average grain size of 20 nanometers have excellent light absorption characteristics in the range of 230-670 nanometers. The chemical solution preparation method is rich in required raw materials, simple in process, low in cost and suitable for large-scale production of the high-purity selenium nanoparticles.

The invention discloses a nickel phosphide material as well as a preparation method and application thereof, and relates to nickel phosphide as well as a preparation method and application thereof. The chemical formula of the nickel phosphide material is Ni2P, the nickel phosphide material has a hexagonal crystal structure, and the morphology of the nickel phosphide material is a fiber material modified by chippings. Different fibers are interwoven, the whole structure is loose, and pores are rich; the fiber is composed of three elements of Ni, P and N, the width of the fiber is 50-500 nanometers, the width of a single fiber is uniform, and the length of the single fiber is 50-100 micrometers. The method comprises the following steps: 1, preparing a precursor; and 2, phosphating. The nickel phosphide material prepared by the preparation method is applied to modification of a lithium-sulfur battery positive electrode side diaphragm, high initial specific discharge capacity is realized under the current density of 1C and is 907 mAhg <-1 >, the average capacity fading rate of each circle is only 0.047% after 800 circles of circulation, and the nickel phosphide material shows good circulation stability; the preparation technology is ingenious, operation is simple and easy, performance is excellent, and commercialized production is facilitated.