103 results about "Hexagonal crystals" patented technology

To provide a magnesium silicon nitride film having piezoelectric characteristics, a piezoelectric body, and a piezoelectric element.SOLUTION: A magnesium silicon nitride film contains magnesium, silicon, and nitrogen, and a crystalline phase contains hexagonal crystal. A piezoelectric body and a piezoelectric element include the magnesium silicon nitride film. The magnesium silicon nitride film may contain aluminum. The hexagonal crystal contained in the magnesium silicon nitride film may have a wurtzite type structure. A thickness of the magnesium silicon nitride film may be 2,000 nm or lower.SELECTED DRAWING: Figure 1

A bilayer film of a magnetic body and an insulator has an antiferromagnetic layer having a hexagonal crystal structure and at least one surface of which is the (10-10) surface of an antiferromagnetic body, and an insulator layer containing two or three or four atoms laminated on the (10-10) surface of the antiferromagnetic layer. A bilayer film of a magnetic body and an insulator has an antiferromagnetic layer having a hexagonal crystal structure and at least one surface of which is the (0001) surface of an antiferromagnetic body, and an insulator layer containing two or three or four atoms laminated on the (0001) surface of the antiferromagnetic layer. The tunneling magnetoresistive element has a second antiferromagnetic film layer laminated on the insulator of the bilayer film. The magnetic memory includes a plurality of the tunneling magnetoresistive elements.

This antiferromagnetic material has a hexagonal crystal structure (space group P63 / mmc) and has a composition of (Mn1-xAx)3Sn (0<x<0.15, A=Ti, V, Cr, Zr, Nb, Mo, Tc, Hf, Ta, W, Re) or Mn3Sn1-yBy (0<y<0.35, B=Sc, Ti, V, Ga, Y, Zr, Nb, In, Hf, Tl). A is preferably at least one of V and Cr. Also, B is preferably at least one of Ga, In, and Tl.

The present invention pertains to lithium-nickel-manganese composite oxide particles are for use in a positive electrode active material for a lithium-ion secondary battery, and the lithium-nickel-manganese composite oxide particles include secondary particles formed by the aggregation of primary particles containing a lithium-nickel-manganese composite oxide having a hexagonal crystal structure with a layered structure. The secondary particles each have a hollow structure including an outer shell portion and a hollow portion formed inside the outer shell portion. The lithium-nickel-manganese composite oxide particles include, as 20% or more of the total number of the secondary particles, through‑hole-containing secondary particles that each have a through‑hole which has an average diameter of 20 nm or more and penetrates the outer shell portion from the outside of the outer shell portion to the hollow portion.

1. Name of the product in this design: Inductive switch (hexagonal crystal). 2. Application of this design: This design is used for intelligent switches. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: a 3D model.

The application relates to a novel lithium ion battery layered sulfide positive electrode material, which has a general formula of Li 1.33‑0.33x V x Ti 0.67‑0.67x S2, and 0<=x<=0.5. The positive electrode material belongs to a hexagonal crystal structure of O3 type, and a corresponding space group is P63 / mmc. The micro-morphology of the positive electrode material is granular, the particle size is about 20-50 mu m, and each element is uniformly distributed on the particle surface and inside. In the positive electrode material, almost all the capacity comes from the redox reaction of sulfur, and the capacity contribution of vanadium can be ignored. Electrochemical test and solid-state nuclear magnetic characterization results show that the Li 1.27 V 0.2 Ti 0.53 S2 positive electrode material has a reversible capacity of up to 308 mAh g ‑1 , and realizes reversible deintercalation of all Li + in the system. Meanwhile, the material exhibits extremely excellent rate and cycle performance, has a capacity retention rate of 81.0% after 4300 cycles of long cycle, and has almost no voltage attenuation in the cycle process.

The invention relates to the technical field of lanthanum oxycarbonate, and discloses a lanthanum oxycarbonate catalyst and a preparation method and application thereof, and the lanthanum oxycarbonate catalyst comprises hexagonal crystal phase lanthanum oxycarbonate and hexagonal crystal phase lanthanum oxycarbonate containing a doping element R. The method comprises the following steps: (1) adding alkali liquor into a solution of a lanthanum source, and then carrying out solid-liquid separation and drying to obtain lanthanum hydroxide; (2) contacting a solution of a compound containing a doping element R with lanthanum hydroxide, and then drying; and (3) roasting the dried product in the step (2) in a carbon-containing atmosphere to obtain the lanthanum oxycarbonate catalyst. When the catalyst prepared by the method is used for the oxidative coupling reaction of methane, the yield of C2 hydrocarbon is relatively high.

The objective is to provide a heat-shielding composition that includes a dispersion powder that can be converted into an aqueous dispersion using water as a dispersion medium by adding water. [Solution] A nonionic polymer dispersant and A crystal with a hexagonal crystal structure, general formula M x WO y (However, element M includes one or more elements selected from Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, and satisfies 0.1 ≤ x ≤ 1.0 and 2.0 ≤ y < 4.0) Composite tungsten oxide particles containing composite tungsten oxide, A heat-shielding composition comprising polycarbonate resin or acrylic resin.

The invention discloses a method for preparing complex silicon-carbon-containing solid waste into multi-type silicon carbide or multi-structure graphene based on instantaneous carbon thermal shock selective regulation and control. The method comprises the following steps: putting the complex silicon-carbon-containing solid waste into a graphite reactor; current is applied to the graphite reactor through Joule heating for flash evaporation treatment, the temperature range of the flash evaporation treatment is 1500-2800 DEG C, and the heating rate is larger than 400 DEG C / s; by cooperatively controlling the intensity of the applied current, the flash evaporation temperature and the flash evaporation time, the complex silicon-carbon-containing solid waste is converted into a target product; the target product comprises at least one of cubic crystal form 3C-SiC, hexagonal crystal form 6H-SiC, turbine layered graphene and hybrid AB-turbine layered graphene. According to the method, the non-equilibrium dynamic principle is utilized, the problems that a traditional recycling method is difficult to cooperatively treat complex solid waste, low in product value and single in type are effectively solved, high-selectivity and high-valued conversion of the waste is achieved, the technological process is simple, energy is saved, environment friendliness is achieved, and a new way is provided for solid waste recycling.

The solid electrolyte has: first crystallites formed on primary particles and having a first crystal structure; a second crystallite formed in the same primary particle as the first crystallite and having a second crystal structure different from the first crystal structure; and an amorphous phase, the first crystallites and the second crystallites each contain lithium, the first crystal structure is a hexagonal crystal, the second crystal structure is an orthorhombic crystal, and both the crystallite size of the first crystallites and the crystallite size of the second crystallites are 50 nm or less.

A semiconductor device includes a semiconductor die including a substrate having a hexagonal crystal structure. The first and second sides of the semiconductor die extend along respective first and second crystal axes of the hexagonal crystal structure of the substrate.

Electromagnetic wave absorbing particles including cesium tungsten oxide represented by a general formula CsxW1-yO3-z (0.2≤x≤0.4, 0<y≤0.4, and 0<z≤0.46) and having an orthorhombic crystal structure or a hexagonal crystal structure are provided.

A coated cutting tool is provided with a hard coating film on a base material. The hard coating film is composed of a nitride or carbonitride containing 50 at% to 70 at% (inclusive) of Al, 20 at% to 50 at% (inclusive) of Cr, and 4 at% to 15 at% (inclusive) of Si with respect to the total amount of metal including semimetal. The atomic ratio (at%) A of a metal element including a semimetal and the atomic ratio (at%) B of nitrogen in the hard coating satisfy 1.07 lt; b / Alt; 1.30, 1.30. The hard coating film exhibits a maximum peak intensity caused by a (200) plane or a (111) plane of a cubic crystal in an intensity distribution determined from an X-ray diffraction pattern or a selected area diffraction pattern of a transmission electron microscope, and does not have a peak mainly composed of a hexagonal crystal in the intensity distribution determined from the selected area diffraction pattern.

This invention belongs to the field of magnetic refrigeration technology, specifically relating to the application of a hexagonal crystal material Sr6GdSc(BO3)6 in ultra-low temperature magnetic refrigeration. This hexagonal crystal material Sr6GdSc(BO3)6 does not undergo a phase transition at temperatures above 100 mK and exhibits a large magnetocaloric effect near 1 K. The maximum magnetic entropy changes under magnetic field variations of 0–1 T, 0–2 T, and 0–3 T are 39.36 mJ·cm⁻¹, respectively. ‑3 · K ‑1 Or 9.01 J·kg ‑1 ·K ‑1 53.95 mJ·cm ‑3 ·K ‑1 Or 12.34 J·kg ‑1 ·K ‑1 and 59.49 mJ·cm ‑3 ·K ‑1 Or 13.61 J·kg ‑1 ·K ‑1 The hexagonal crystal material Sr6GdSc(BO3)6 of this invention exhibits significant magnetocaloric effects and superior low-temperature performance, and has great application prospects in the field of ultra-low temperature magnetic refrigeration technology.

The invention relates to an easy-to-activate AB5 type multi-element doped modified hydrogen storage material and a preparation method and application thereof, the chemical general formula of the hydrogen storage material is LaxCeyNdzNiaFebMnc, x + y + z = 1, x is greater than or equal to 0.5, y is greater than or equal to 0 and less than or equal to 0.5, and z is greater than or equal to 0 and less than or equal to 0.5; a + b + c = 5, a > = 4, 0 < = b < = 1, 0 < = c < = 1, and at least two of y, z, b and c are not equal to 0. Compared with the prior art, the single-phase AB5 type hydrogen storage alloy with a hexagonal crystal form is prepared by synergistically replacing A site (La) by Ce / Nd and replacing B site (Ni) by Fe / Mn according to a specific proportion, the alloy has relatively high hydrogen storage capacity and rapid hydrogen absorption and desorption dynamic performance, the hysteresis of a hydrogen absorption and desorption platform is obviously improved, and rapid hydrogen absorption and the like can be completed without hydrogen absorption and desorption activation.

Heterojunction structure for a high electron mobility transistor, comprising successively: - a substrate (1); - a nucleation layer (2), made of a material chosen from monocrystalline silicon Si having a crystal orientation of the "111" type and monocrystalline aluminum nitride AlN having a hexagonal crystal structure of the "2H" type; - a buffer layer (3) devoid of carbon atoms, made of a material chosen from aluminum nitride AlN and aluminum-gallium nitride AlxGa1-xN with x>0.5; - first and second semiconductor layers (4, 5), made respectively from first and second III-N type alloys chosen so that the first and second semiconductor layers (4, 5) have a heterojunction (H) adapted to form a two-dimensional electron gas. Figure 5

The invention relates to a group III-V semiconductor material, which has a metastable hexagonal crystal structure, in the form of a thin film up to 1µm thick. Figure 1.

The present invention discloses a method, device and storage medium for determining the irradiation cascade range of a close-packed hexagonal crystal, which relates to the technical field of cascade range calibration, and is mainly capable of improving the efficiency and accuracy of determining the irradiation cascade range of a close-packed hexagonal crystal. In response to a determination signal of the irradiation cascade range of a close-packed hexagonal crystal to be detected, the irradiation process of the close-packed hexagonal crystal to be detected is simulated, and during the simulation process, off-site cascade process data of cascade collisions of atoms in the close-packed hexagonal crystal to be detected when irradiated by incident particles is obtained; based on the off-site cascade process data, an off-site cascade process diagram of the close-packed hexagonal crystal to be detected is determined; a preset calibration algorithm is used to perform a rough calibration of the off-site cascade process diagram to obtain an initial cascade range; the atomic energy difference between each atom within the initial cascade range is determined, and based on the atomic energy difference, the cascade range of the close-packed hexagonal crystal to be detected is determined within the initial cascade range.

The invention relates to a semiconductor nitride film material and a preparation method thereof, and belongs to the technical field of semiconductor film materials. The semiconductor nitride thin film material comprises the following components: a compound with a chemical formula of Al < 1-x > Si < x > N < 1-y > O < y >, the compound is a hexagonal system, and the crystal space group is P63mc. The preparation method of the semiconductor nitride thin film material comprises the following steps: cleaning a substrate; according to the method, Al or Al and Si are used as a target material, the target material is sputtered in a high-power pulse magnetron sputtering mode in an argon and nitrogen mixed gas environment, and the semiconductor nitride thin film material is deposited on a substrate. The semiconductor nitride film material has excellent insulativity, thermal stability, wear resistance and hydrophobicity at the same time, and can meet application requirements in various complex environments.

The invention provides a Pt-Co / ZnO catalyst, a preparation method and application thereof, and a method for synthesizing alcohol from carbon dioxide, the catalyst contains a carrier, an active component and an auxiliary agent, the carrier is a ZnO nanorod, the active component comprises Co, the auxiliary agent comprises Pt, the ZnO nanorod in the catalyst is in a hexagonal crystal form, and the auxiliary agent comprises Pt. Co epitaxially grows on the {100} crystal face of the ZnO nanorod to form a coating layer. The Pt-Co / ZnO catalyst with a clear structure is synthesized by utilizing lattice matching, and has good hydrogenation activity, for example, in a reaction for synthesizing alcohol through carbon dioxide hydrogenation, when the air speed is 6L. Gcat <-1 >. H <-1 >, the pressure is 2MPa, the activation temperature is 250 DEG C and the reaction temperature is 300 DEG C, the CO2 conversion rate can reach 20.1%, and the STY value of the alcohol is 5.6 mmol.gcat <-1 >. H <-1 >.

This application relates to the fields of petroleum processing catalysts and solid waste resource utilization technology, specifically disclosing an iron sulfide catalyst for heavy oil hydrocracking and its application. The active component of this iron sulfide catalyst for heavy oil hydrocracking includes non-stoichiometric iron sulfide Fe obtained from coal combustion dust through magnetic separation. 1‑x S, where x ≤ 0.2. The iron sulfide catalyst Fe for heavy oil hydrocracking of this application. 1‑x S has a unique hexagonal crystal structure and surface properties. When used as a catalyst for heavy oil hydrocracking, it has significantly better catalytic efficiency than traditional hydrocracking catalysts, lower cost, longer service life, and stronger resistance to carbon buildup.

The antiferromagnetic material has a hexagonal crystal structure and has an antiferromagnetic layer containing Mn3A1-xBx (0lt, xlt, 0.5, A = Ga, Ge, Sn, B = Mg, Al, Si, P, Mn, Ni, Cu, Zn, As, Ru, Ag, Cd, In, Sb, Os, Au, Hg, T1, Pb) or (Mn1-pCrp) 3GaqGerSn1-q-r (0lt, plt, 0.5, 0lt, qlt, 1, 0lt, rlt, 1, 0lt, q + r < = 1), and an insulator layer laminated on the surface of the antiferromagnetic layer. It is preferable that A is Ga and / or Sn. In addition, it is preferable that B is at least one of Mg, Al, Si, Mn, Cu, Zn, Ag, Cd, In, Sb, Au, and Tl.

The invention discloses a method for preparing seed crystals and directionally growing hexagonal crystal system crystals such as lanthanum bromide, chlorine-lanthanum bromide, lanthanum chloride and cerium bromide by utilizing the hexagonal crystal system crystals which are easy to grow and process, such as lanthanum chloride, cerium bromide and the like, and the hexagonal crystal system crystals which are easy to process in the method comprise the lanthanum chloride crystals, the cerium bromide crystals and the like. The hexagonal crystal system grown by the method comprises hexagonal crystal systems such as lanthanum bromide, chlorine-lanthanum bromide, lanthanum chloride, cerium bromide and the like. According to the invention, the raw material cost and the processing cost can be obviously reduced in the preparation process of the crystal growth seed crystal.

The application discloses a preparation method of a bidirectional shape memory elastomer based on solid-solid phase transition construction and belongs to the shape memory polymer material field. The bidirectional shape memory elastomer is prepared from a multi-crystal trans-1,4-polybutadiene with monoclinic phase and hexagonal phase through chemical cross-linking, wherein the low-temperature crystal type is monoclinic crystal, the high-temperature crystal type is hexagonal crystal, the monoclinic crystal is converted into hexagonal crystal through a solid-solid phase transition process when being heated to 40-65 DEG C, and the melting temperature of the hexagonal crystal is 90-110 DEG C; the elastomer can produce reversible crystalline solid-solid phase transition with the change of the ambient temperature, so that the shape memory behavior is realized. The bidirectional shape memory behavior elastomer is prepared based on the solid-solid phase transition of the multi-crystal polymer. The thermal history can be completely eliminated above the melting temperature, the cyclic use and reprogramming are realized. The preparation process is simple, and the large-scale preparation is facilitated.

This dispersion powder contains a nonionic polymer dispersant and composite tungsten oxide particles that have a hexagonal crystal structure and are represented by general formula MxWOy (wherein, M element includes one or more kinds of elements selected from among Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, and Ra, and 0.1≤x≤1.0 and 2.0≤y<4.0 are satisfied).

Provided is a near-infrared absorbing particle containing cesium tungstate, wherein the cesium tungstate has a pseudo-hexagonal crystal structure selected from one or more of orthorhombic, rhombohedral, and cubic crystals, and the cesium tungstate is represented by the general formula Cs x W y O z It indicates the composition within the area surrounded by four straight lines of x=0.6y, z=2.5y, y=5x and Cs2O:WO3=m:n (m, n are integers) in a ternary composition diagram with Cs, W, and O as vertices.

To provide stable electric characteristics to a semiconductor device using an oxide semiconductor film to manufacture a highly reliable semiconductor device.SOLUTION: The subject matter is to form a crystalline oxide semiconductor film without a plurality of processes by preferentially depositing zinc having a small atomic weight on an oxide insulation film to form a zinc-containing seed crystal by utilizing a difference in atomic weights of a plurality of kinds of atoms included in an oxide semiconductor target and depositing tin, indium and the like having a large atomic weight on the seed crystal while growing crystals of tin, indium and the like. The further subject matter is to form a crystalline oxide semiconductor film of a single crystal or a substantially single crystal by growing crystals by using the seed crystal having crystals including zinc of a hexagonal crystal structure as a seed crystal to form a crystalline oxide semiconductor film.SELECTED DRAWING: Figure 1

An underlying substrate for a single crystal diamond laminate substrate, the underlying substrate including an initial substrate being any of a single crystal Si substrate, a single crystal α-Al2O3 substrate, etc., and an intermediate layer on the initial substrate, in which an outermost surface on the initial substrate has an off angle in a crystal axis <−1-12> direction relative to a cubic crystal plane orientation, or has an off angle in a crystal axis <10-10> or <11-20> direction relative to a hexagonal crystal plane orientation, etc. This provides the underlying substrate capable of forming a single crystal diamond layer having a large area (large diameter), high crystallinity, few hillocks, few abnormal growth particles such as twin crystals, few dislocation defects, etc., high purity, low stress, and high quality and applicable to an electronic and magnetic device.

Provided is a laminated substrate that has excellent heat resistance. This laminated substrate is formed of: a group-III element nitride crystal substrate; and a support substrate composed of a material different from the material constituting the group-III element nitride crystal substrate. The support substrate is composed of a crystal having a hexagonal crystal structure. In a plan view, the minimum value of the angle formed by the m-plane of the group-III element nitride crystal substrate and the m-plane of the support substrate is 1° or more.

A surface-coated cutting tool having excellent durability even in high-feed cutting of austenitic stainless steel, the surface-coated cutting tool having a layer A, a layer B, and a layer C in contact with each other in this order from the base, the sum of the average thicknesses of the layers A, B, and C being 0.7-21.0 [mu] m, the layer A being a layer having an average thickness of 0.1-2.0 [mu] m and containing a nitride or carbonitride of Ti, and the layer C being a layer having an average thickness of 0.1-2.0 [mu] m and containing a nitride or carbonitride of Ti; the average thickness of the B layer is 0.1-0.5 [mu] m, the B layer is (AlXBTi1-XB) (CYBN1-YB) (0.80 < = XB < = 0.95, 0.00 < = YB < 0.05), crystal grains of a wurtzite type hexagonal crystal structure account for more than 30% by area, the balance is crystal grains of a NaCl type face-centered cubic crystal structure, the average thickness of the C layer is 0.5-20.0 [mu] m, the C layer is (AlXCTi1-XC) (CYCN1-YC) (0.65 < = XC < = 0.90, 0.00 < = YC < 0.05), and crystal grains of a wurtzite type hexagonal crystal structure account for 5-25% by area, and the thickness of the C layer is 0.5-20.0 [ and the rest part is crystal grains with a NaCl type face-centered cubic crystal structure.