Preparation method for buffering layer material of copper indium gallium selenide film solar battery

A technology of solar cells and copper indium gallium selenide, which is applied in the manufacture of circuits, electrical components, and final products, to achieve the effects of simple equipment, reduced lattice mismatch, and environmentally friendly production

Inactive Publication Date: 2012-07-04
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013]Compared with chemical bath deposition of CdS, the reaction speed of ZnS prepared by chemical bath deposition is slow

Method used

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  • Preparation method for buffering layer material of copper indium gallium selenide film solar battery
  • Preparation method for buffering layer material of copper indium gallium selenide film solar battery
  • Preparation method for buffering layer material of copper indium gallium selenide film solar battery

Examples

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example 1

[0038] First measure 0.2mol / L zinc sulfate (ZnSO 4 ·7H 2 O) solution 10ml joins in the clean beaker that volume is 100ml, then adds the sodium citrate (C of 0.1mol / L) while stirring 6 N 5 o 7 Na 3 2H 2 O) solution 3ml, mass fraction is 25% ammoniacal liquor (NH 3 ·H 2 (2) 2ml, then add an appropriate amount of deionized water, so that the total volume of the solution in the beaker is 100ml, finally weighed 0.92g thiourea (SC (NH 2 ) 2 ) powder into the solution and stir well. Put the substrate prepared with the CIGS absorbing layer and the cleaned glass substrate into the solution vertically along the wall of the beaker, and seal the mouth of the beaker with aluminum foil, then put it in 60 o C water bath for constant temperature reaction, the reaction time is 20min. After the reaction, the sample was taken out and rinsed with deionized water to remove colloidal particles and flocculent precipitates adsorbed on the surface of the sample, and then dried to obtain a Zn...

example 2

[0040] First measure 0.2mol / L zinc sulfate (ZnSO 4 ·7H 2 (O) 2ml of the solution is added into a clean beaker with a volume of 100 ml, and then 0.1mol / L of sodium citrate (C 6 N 5 o 7 Na 3 2H 2 O) solution 1ml, mass fraction is 25% ammoniacal liquor (NH 3 ·H 2 (2) 2ml, then add an appropriate amount of deionized water, just make the total volume of the solution added in the beaker be 100ml, finally weigh 0.92g thiourea (SC(NH 2 ) 2 ) powder into the solution. Stir well. Put the substrate prepared with the CIGS absorbing layer and the cleaned glass substrate into the solution vertically along the wall of the beaker, and seal the mouth of the beaker with aluminum foil, and put it in the 70 o C water bath for constant temperature reaction, the reaction time is 60min. After the reaction, the sample was taken out and rinsed with deionized water to remove the colloidal particles and flocculent precipitates adsorbed on the surface of the sample, and then dried to obtain a ...

example 3

[0042] First measure 0.2mol / L zinc sulfate (ZnSO 4 ·7H 2 O) 1ml of the solution is added into a clean beaker with a volume of 100 ml, and then 0.1mol / L of sodium citrate (C 6 N 5 o 7 Na 3 2H 2 O) solution 2ml, mass fraction is 25% ammoniacal liquor (NH 3 ·H 2 (0) 1ml, then add an appropriate amount of deionized water, just make the total volume of the solution added in the beaker be 100ml, and finally weigh 0.46g thiourea (SC(NH 2 ) 2 ) powder into the solution. Stir well. Put the substrate prepared with the CIGS absorbing layer and the cleaned glass substrate into the solution vertically along the wall of the beaker, and seal the mouth of the beaker with aluminum foil, then put it in 50 o Carry out constant temperature reaction in C water bath, the reaction time is 120min. After the reaction, the sample was taken out and rinsed with deionized water to remove the colloidal particles and flocculent precipitates adsorbed on the surface of the sample, and then dried to...

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Abstract

The invention discloses a preparation method for a buffering layer material of a copper indium gallium selenide film solar battery. By the method, a precursor of chemical bath reaction is prepared by using a zinc sulfate solution as a Zn<2+> source, a thiourea solution as a S<2-> source, ammonia water as a buffering agent and sodium citrate as a complexing agent; and a Zn(O,S) semiconductor film with uniform and compact grain size distribution and good adhesive force is prepared on a copper indium gallium selenide film and the common glass substrate and serves as the buffering layer of the copper indium gallium selenide film solar battery. The Zn(O,S) instead of CdS serves as the buffering layer of the copper indium gallium selenide film solar battery, so production of the copper indium gallium selenide film solar battery is environment-friendly and economic. The band gap width of the Zn(O,S) is more than that of the CdS, so more incident photons can reach an absorption layer through the buffering layer, short-circuit current of the battery is increased and photoelectric conversion efficiency of the battery is improved.

Description

technical field [0001] The invention belongs to the preparation technology of key materials of thin-film solar cells, and in particular relates to a preparation method of a buffer layer material of copper indium gallium selenide thin-film solar cells. Background technique [0002] copper indium gallium selenide [Cu(In 1-x Ga x ) Se 2 , referred to as CIGS] The typical structure of a thin-film solar cell is composed of a glass substrate, a molybdenum (Mo) back electrode layer, a CIGS absorber layer, a buffer layer, a window layer, an aluminum electrode, magnesium fluoride (MgF 2 ) composed of anti-reflection layer. The light is incident from the transparent electrode, passes through the anti-reflection film, the window layer, and the buffer layer to reach the absorbing layer and is absorbed, generating photogenerated carriers. The buffer layer material of thin-film solar cells is currently mainly made of cadmium sulfide (CdS) semiconductor material. The main function of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 魏爱香刘军赵湘辉招瑜刘俊
Owner GUANGDONG UNIV OF TECH
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