Pseudo gate removing method
A dummy gate and dry cleaning technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as damage and poor insulation, and achieve improved performance, good shape, and repair of titanium nitride capping layer Effect
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[0029] In the existing method for removing the dummy gate, the dummy gate is usually removed by dry etching. However, the removal rate of the dummy gate of different sizes is different when the dummy gate is removed by dry etching. The removal rate of the dummy gate is faster, and the removal rate of the dummy gate with a smaller size is slower. When the dummy gate with a smaller size is removed cleanly, the gate dielectric layer under the dummy gate with a larger size is easily damaged due to premature exposure. After the metal gate is filled in the opening formed by removing the dummy gate, the metal gate The insulation between the substrate and the substrate is poor. When the transistor is an NMOS, damage to the gate dielectric layer will seriously affect the Time Dependent Dielectric Breakdown (TDDB) of the NMOS.
[0030] Analyze the process of removing the dummy gates. For dummy gates with larger dimensions, the openings formed on the surface of the dummy gates at the beginn...
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