Novel acidic molybdenum aluminum molybdenum etching liquid and its preparation process

A preparation process and etching solution technology, which is applied in the field of new acidic molybdenum aluminum molybdenum etching solution and preparation process, can solve the problem of affecting the image accuracy and quality of high-density thin wires, affecting product yield, difficult to control etching angle and etching of different metal layers Quantity and other issues, to achieve the effect of stable reaction, smooth lines and clean surface

Active Publication Date: 2013-08-21
JIANGYIN RUNMA ELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of etching molybdenum-aluminum-molybdenum materials with reagents, it is often difficult to control the etching angle and the etching amount of different metal layers, which affects the yield of products
[0003] In recent years, while people's demand for liquid cryst

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0024] Example 1

[0025] (1) Composition and preparation of new acidic molybdenum aluminum molybdenum etching solution

[0026] The new acidic molybdenum-aluminum-molybdenum etching solution includes phosphoric acid, acetic acid, nitric acid, cationic surfactants, metal nitrates and pure water. The raw material weight percentages of the molybdenum-aluminum-molybdenum etching solution are: 60% phosphoric acid, 8% acetic acid, and 7% nitric acid. %, metal nitrate 1%, cationic surfactant 0.5%, the rest is pure water.

[0027] Wherein, the metal nitrate is potassium nitrate, and the purity of the potassium nitrate is higher than 99.5%.

[0028] Wherein, the concentrations of phosphoric acid, acetic acid, and nitric acid are 84% phosphoric acid, 99.5% acetic acid, and 68% nitric acid.

[0029] Among them, the cationic surfactant is polyacrylamide.

[0030] Wherein, in the molybdenum aluminum molybdenum etching solution, there are 800 particles with a particle size greater than 0.3 μm per 10...

Example Embodiment

[0046] Example 2

[0047] The new acidic molybdenum aluminum molybdenum etching solution includes phosphoric acid, acetic acid, nitric acid, cationic surfactants, metal nitrates and pure water. The weight percentages of the raw materials of the molybdenum aluminum molybdenum etching solution are: 65% phosphoric acid, 11% acetic acid, and 4 nitric acid. %, 0.3% of metal nitrate, 0.1% of cationic surfactant, and the rest is pure water.

[0048] Wherein, the metal nitrate is potassium nitrate, and the purity of the potassium nitrate is higher than 99.5%.

[0049] Wherein, the concentrations of phosphoric acid, acetic acid, and nitric acid are 84% phosphoric acid, 99.5% acetic acid, and 68% nitric acid.

[0050] Among them, the cationic surfactant is benzalkonium chloride.

[0051] Wherein, in the molybdenum aluminum molybdenum etching solution, there are 700 particles with a particle size greater than 0.3 μm per 1000 kg, the impurity cation is 25 ppb, and the impurity anion is 0.02 ppb.

...

Example Embodiment

[0054] Example 3

[0055] The new acidic molybdenum aluminum molybdenum etching solution includes phosphoric acid, acetic acid, nitric acid, cationic surfactants, metal nitrates and pure water. The weight percentages of the raw materials of the molybdenum aluminum molybdenum etching solution are: 70% phosphoric acid, 15% acetic acid, and 1% nitric acid. %, 0.1% of metal nitrate, 0.001% of cationic surfactant, and the rest is pure water.

[0056] Wherein, the metal nitrate is potassium nitrate, and the purity of the potassium nitrate is higher than 99.5%.

[0057] Wherein, the concentrations of phosphoric acid, acetic acid, and nitric acid are 84% phosphoric acid, 99.5% acetic acid, and 68% nitric acid.

[0058] Among them, the cationic surfactant is benzalkonium bromide.

[0059] Wherein, in the molybdenum-aluminum-molybdenum etching solution, there are 500 particles with a particle size greater than 0.3 μm per 1000 kg, the impurity cation is 20 ppb, and the impurity anion is 0.03 ppb....

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PUM

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Abstract

The invention discloses a novel acidic molybdenum aluminum molybdenum etching liquid and its preparation process. The novel acidic molybdenum aluminum molybdenum etching liquid comprises phosphoric acid, acetic acid, nitric acid, metal nitrate, a cationic surfactant and pure water. The preparation process of the etching liquid includes: maintaining the rotation speed of an ingredient tank stirrer, adding the phosphoric acid, the acetic acid, the nitric acid, potassium nitrate, the pure water and the cationic surfactant sequentially into the ingredient tank, fully stirring them, then introducing the mixture into a filter to conduct filtration, thus obtaining the molybdenum aluminum molybdenum etching liquid. The molybdenum aluminum molybdenum etching liquid provided in the invention has a small particle size and high purity, has a basically consistent etching rate on different metals, and is stable in reaction. By adjusting the nitric acid concentration, the etching speed can be controllable. The substrate etched by the etching liquid has a clean and tidy surface, no residue, and no intermetallic layering phenomenon. The remaining lines are smooth, and the etching angle is maintained at 40-60 degrees.

Description

technical field [0001] The invention relates to a composition for chemical etching of metal materials and a preparation process thereof, in particular to a novel acidic molybdenum-aluminum-molybdenum etching solution and a preparation process. Background technique [0002] Etching is the technique of removing material using chemical reaction or physical impact. Etching technology is divided into wet etching and dry etching, wherein wet etching uses chemical reagents to achieve the purpose of etching through chemical reactions. Molybdenum-aluminum-molybdenum etching solution in the prior art is acidic, mainly made by phosphoric acid, nitric acid and acetic acid through stirring and mixing and filtering, and above-mentioned etching solution has been widely used in thin film field effect transistor liquid crystal display (TFT-LCD), light-emitting diode (LED ), organic light-emitting diode (OLED) and other industries are used in the etching of molybdenum layer and aluminum laye...

Claims

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Application Information

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IPC IPC(8): C23F1/26
Inventor 戈士勇沈翠芬盛建伟袁晓蕾
Owner JIANGYIN RUNMA ELECTRONICS MATERIAL
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