158results about How to "Reduce etching" patented technology

An apparatus for redirecting physical energy includes a substrate defining a first boundary of a region, a first electrode defining a second boundary of the region, the second boundary disposed opposite to the first boundary, a second electrode adjacent to the first boundary for cooperating with the first electrode to apply a non-uniform electric field to the region, the non-uniform electric field having electrical field intensities simultaneously including a first electric field intensity and a second electric field intensity, and a layer of material disposed in the region, the layer having a variable index of refraction responsive to the electric field intensities of the non-uniform electric field, the variable index of refraction including a first index of refraction in response to the first electric field intensity and a second index of refraction in response to the second electric field intensity.

A nonvolatile memory cell employing a plurality of dielectric nanoclusters and a method of fabricating the same are disclosed. In one embodiment, the nonvolatile memory cell comprises a semiconductor substrate having a channel region. A control gate is disposed above the channel region. A control gate dielectric layer is disposed between the channel region and the control gate. A plurality of dielectric nanoclusters are disposed between the channel region and the control gate dielectric layer. Each nanocluster may be separated from adjacent nanoclusters by the control gate dielectric layer. A tunnel oxide layer is disposed between the plurality of dielectric nanoclusters and the channel region. Further, a source and a drain are formed in the semiconductor substrate.

The invention discloses a chip embedded silicon substrate type fan-out type packaging structure and a manufacturing method therefor. The packaging structure comprises a silicon substrate, wherein the silicon substrate has a first surface and a second surface; at least one groove A which extends to the second surface is formed in the first surface of the silicon substrate; at least one chip with an upward bonding pad surface is arranged in the groove A; the bonding pad surface of the chip is higher than the first surface of the silicon substrate for a certain distance; a thick adhesive layer which exposes the groove A and the chip is paved on the first surface; the sum of the thickness of the thick adhesive layer and the depth of the groove A is close to or equal to the thickness of the chip; and the electric power of the bonding pad of the chip is fan out to the upward side of the thick adhesive layer through a metal wiring layer. The thick adhesive layer is introduced to the surface of the silicon substrate, and the thick adhesive layer and the silicon substrate are jointly used as a chip fan-out carrier, so that requirement on the groove etching depth and the groove bottom etching uniformity in embedding the chip in the silicon substrate can be lowered, and the purposes of shortening etching process time on the silicon substrate, lowering etching and packaging costs and reducing warping degree are achieved.

The invention relates to a chemical etching measurement method for optical element sub surface damages, an auxiliary experiment device and a test method. In the chemical etching measurement method, through measuring the roughness of a sample during the etching process, an evolutional relation curve for roughness outlines along with the etching time is drawn, and a sub surface damage depth value isthus obtained. The chemical etching auxiliary device is used to realize etching, cleaning and drying on the optical element, an ultrasonic vibration instrument is added during the cleaning process toassist cleaning, and a hair drier and a motor are added during the drying process to assist drying. The sub surface damage depth can be quickly and accurately measured; a set of etching auxiliary device is designed, the device is simple in operation, high in efficiency and low in danger, sediments generated during the etching process can be effectively reduced, and influences on etching and measurement are greatly reduced.

The invention, relating to the field of cell manufacturing and energy storage, discloses a surface modification method for raising the activity of an electrode material of a vanadium cell, comprising the following steps: firstly cleaning the electrode material of the vanadium cell to remove surface impurities, then carrying out modification treatment of the electrode material by using plasma, reacting the gas which generates plasma with the electrode surface under ionization state to generate polar functional groups; and finally carrying out ultrasonic cleaning on the modified electrode material for 5-30 min and drying at 60-120 DEG C. According to the invention, by using the method of the invention to carry out surface modification on the electrode material of the vanadium cell, the hydrophilcity of the electrode surface is enhanced, partial polar functional groups has good catalytic influence on electrode reaction, and the energy storage efficiency of the cell is expected to increase. The method can be used for processing material surfaces with various morphologies and can keep mechanical properties and the like of material matrixes, the experiment condition are easy to control and the method has no pollution to environment. The method is efficient and environmentally friendly.

A process for preparing the reverse GaN-based LED chip includes such steps as epitaxial growth of N-type GaN contact layer, active luminescent region and P-type GaN layer on substrate, depositing insulating SiO2 or SiN layer on said P-type layer, thinning the substrate from its back, depositing insulating and isolating SiO2 or SiN layer on carrier, preparing P-type solder bosses on P-type electrode and N-type solder boss on N-type electrode, reversely soldering each chip onto carrier, and cutting for separating the LED chip units from each other.

A groove forming method comprises the steps of providing a silicon substrate which comprises a first area and a second area; performing plasma etching on the silicon substrate, wherein the plasma etching comprises the steps of performing etching of a first stage, forming a first opening and a second opening in the silicon substrate, and enabling the width of the first opening to be smaller than that of the second opening; performing oxidation of a second stage, forming a first oxidation layer at the bottom and a side wall of the first opening, forming a second oxidation layer at the bottom and a side wall of the second opening; performing etching of a third stage, etching and removing the first oxidation layer and the second oxidation layer of a partial thickness; performing etching of a fourth stage, forming a third opening and a fourth opening; and repeating the steps of oxidation of the second stage, etching of the third stage and etching of the fourth stage until a plurality of first grooves are formed in the first area of the silicon substrate and a plurality of second grooves are formed in the second area of the substrate. The influence on the etching process caused by the etching load effect is effectively eliminated.

The invention belongs to the technical field of ion beam control, and particularly relates to a radio-frequency inductive coupling linear ion source. The radio-frequency inductive coupling linear ionsource comprises an ion source shielding shell, a radio frequency coupling antenna, a dielectric coupling window used for transmitting radio-frequency power and isolating a discharge chamber from an antenna chamber, a plasma discharge chamber side wall used for accommodating discharge plasmas, a multi-grid ion beam extraction system used for extracting ion beams from the plasma discharge chamber,and a radio-frequency neutralizer used for providing initial electrons into the discharge chamber and providing neutralized electrons into the ion beams and a base material. The radio-frequency inductive coupling linear ion source can generate high-uniformity large-area narrow and long linear ion beams in a large size range, and is suitable for processes of ion beam cleaning, etching, thin film deposition and the like of large-area base materials.

The invention discloses a method for manufacturing a shallow groove isolation structure, which comprises: forming a hard mask of which an opening exposes from a substrate, and oxidizing the substrate in an oxygen atmosphere; and forming a shallow groove on the substrate at the position of the opening by a dry etching method after the oxidation treatment. The method for manufacturing the shallow groove isolation structure can form a relatively round shallow groove top chamber and reduce the probability of process defects.

The invention discloses a radio frequency laterally diffused metal oxide semiconductor (LDMOS) component. A faraday shield is a single metal layer. A part, above a drain terminal drift region, of the faraday shield comprises more than three vertical structures, wherein the depths of the vertical structures decrease in sequence. Arrangement of the vertical structures can play a role in lifting an electric field. Due to difference combination of the lengths of the vertical structures and difference of distances of drain terminals, the electric field below the faraday shield can be distributed more evenly, and breakdown voltage of the component is improved. Without deposition of multi-layer metal, the radio frequency LDMOS component can achieve a high breakdown voltage, a metal deposition and corrosion process during a manufacturing process of the component can be reduced, manufacturing technology of the component is simple, and technology cost of the component is lowered. The invention further discloses a manufacturing method of the radio frequency LDMOS component.

The invention discloses a novel inorganic environment-friendly film-stripping liquid, which comprises the following materials in percentages by weight: 1-10% of an inorganic alkali compound, 0.01-5% of an azole compound, 1-5% of a tin-protecting deoxidizer, 0.05-1% of a film-stripping accelerator and the balance of water. Through the ratios of the materials, the novel inorganic environment-friendly film-stripping liquid is capable of quickly stripping a dry film of an anti-corrosion layer on a circuit board subjected to pattern plating, the etching rate on copper and tin is extremely low, anda waste liquid generated after film stripping through the novel inorganic environment-friendly film-stripping liquid is low in COD value and complexing capability, so that the treatment difficulty ofthe waste liquid can be effectively reduced and the easy-to-treat and easy-to-discharge standards are achieved.

The method discloses a method for etching a groove. In the invention, the etching is carried out in a reaction chamber, and the method comprises the a following main etching step implemented by two steps: 1, etching on the basis of the original process parameters; and 2, etching on the basis of the regulated process parameters. By adopting the method, micro grooves can be effectively eliminated to further reduce the RC delay.

The invention discloses a deep silicon etching method, and relates to the technical field of semiconductors. The method can improve the morphology of a sidewall. The deep silicon etching method comprises an initial deep silicon etching stage, the initial deep silicon etching stage comprises a plurality of primary deposition steps and a plurality of primary etching steps, the plurality of primary deposition steps and the plurality of primary etching steps are alternately carried out, the deposition time duration of the plurality of primary deposition steps successively decreases, and the etching time duration of the plurality of primary etching steps successively increases. The method is used for deep silicon etching.

A spacer structure contains a carbon-containing oxynitride film positioned on a gate sidewall and a nitride film covering the carbon-containing oxide film. The carbon-containing oxynitride film has low etch rate so that the spacer structure can have a good profile during etching the carbon-containing oxynitride film.

The present invention provides a semiconductor structure and a formation method thereof. The formation method of the semiconductor structure comprises the steps of: providing a substrate, wherein thesubstrate comprises fin columns, and each fin column comprises a bottom portion region, a channel region located on the bottom portion region and a top portion region located on the channel region; forming first isolation layers on the substrate, wherein the first isolation layers cover the bottom portion regions of the fin columns; forming first gate oxide layers and second gate oxide layers at the surfaces of the side walls of the channel regions of the fin columns, wherein the second gate oxide layers are located at the surfaces of the top portions of the first gate oxide layers, and the thicknesses of the first gate oxide layers and the second gate oxide layers are different; forming gate structures at the surfaces of the top portions of the first isolation layers, wherein the gate structures cover the first gate oxide layers and the second gate oxide layers; and forming second isolation layers at the surfaces of the top portions of the gate structures, wherein the second isolationlayers cover the side walls of the top portion regions of the fin columns. The formation method provided by the invention can improve the performances of the semiconductor structure.

A method for forming self-aligned triple graphs comprises the steps of providing a to-be-etched layer, wherein part of the surface of the to-be-etched layer is provided with a plurality of split first sacrificial layers, the surface of the to-be-etched layer is exposed between the adjacent first sacrificial layers, and the surfaces of the first sacrificial layers are provided with second sacrificial layers; forming mask films on the surface of the to-be-etched layer, the surfaces of the first sacrificial layers and the surfaces of the second sacrificial layers; removing the mask films on side walls and top surfaces of the second sacrificial layers and forming first masks on two sides of the first sacrificial layers; after the first masks are formed, removing part of the second sacrificial layers along side wall surfaces of the second sacrificial layers to reduce the dimensions of the second sacrificial layers and expose part of the surfaces of the first sacrificial layers, and reducing the dimensions until the second sacrificial layers form second masks. The method is simple, and the formed triple graphs are applied more widely.

A method of manufacturing grids includes steps of sequentially forming a grid layer, an anti-reflection layer and grid photoresist patterns on a semiconductor substrate, etching for removing the anti-reflection layer uncovered by the grid photoresist patterns, etching the grid layer uncovered by the anti-reflection layer, and forming grids, wherein a process of etching the anti-reflection layer includes steps of primarily etching the anti-reflection layer with plasma and over-etching the anti-reflection layer with plasma containing CF4 and O2. The invention further provides a method of manufacturing semiconductor devices. The method of manufacturing grids is capable of reducing residue defects of the anti-reflection layer materials or does not have any residue defects.

The invention relates to the technical field of semiconductor processing equipment, and discloses etching equipment for removing defects on the back surface of a wafer and a crystal edge etching method. The specific etching equipment includes an upper table body and a lower table body, wherein upper and lower electrodes are respectively arranged on opposite sides of the upper table body and the lower table body, a base for supporting the wafer is arranged on the lower electrode, and the equipment also includes an etching gas supply assembly for etching the upper and lower edges of the wafer. When crystal edge etching is carried out, the wafer is placed on the base, the upper table body drives the upper electrode to move downward, presses and covers the center of the wafer, the etching gassupply assembly introduces gas to the upper and lower edges of the wafer, the defects of the upper and lower edges of the wafer are etched and removed at the same time, and the yield of the product isimproved.

The invention discloses a method and system for processing a polycrystalline silicon layer before the forming of a gate insulation layer, and the method comprises the following steps: carrying out theplasma processing of oxygen in a vacuum reaction cavity to form first oxygen ions, and carrying out the first bombardment cleaning of the polycrystalline silicon layer on the surface of a substrate through the first oxygen; carrying out the plasma processing of the mixed gas of fluorocarbon gas, hydrogen gas and argon gas in the vacuum reaction cavity to form plasmas, and carrying out the secondbombardment cleaning of the polycrystalline silicon layer on the surface of the substrate through the plasmas after the first bombardment cleaning; carrying out the plasma processing of the mixed gasof oxygen gas in the vacuum reaction cavity to form second oxygen ions, and carrying out the third bombardment cleaning of the polycrystalline silicon layer on the surface of the substrate through thesecond oxygen ions after the second bombardment cleaning. The method provided by the invention can achieve the removal of the oxides (mainly comprising silicon oxide) on the surface of the polycrystalline silicon layer in a better way, and can reduce mura on a P-Si surface.

The invention discloses a multi-layer photocurable resin comprehensive covering package method for an organic electronic device. The method comprises a step of transferring a sample into a nitrogen glove box and applying an inert UV curing protective adhesive on an organic device, a step of applying a high-water-oxygen barrier UV curing adhesive on glass or flexible cover plate (high water-oxygenbarrier film) in the nitrogen glove box, covering the sample with a package covering layer with the completion of application, and smoothing and pressing, and a step of placing the device under a UV lamp to cure to complete packaging and bonding. Compared with the prior art, the present invention has the following advantages that the packaging process and materials consider the protection of the device, at the same time, the package is completed as quickly as possible, and the risk of device damage is reduced. During the packaging process, a package layer can completely cover the device, and the steps of etching, positioning and printing are reduced. In this way, the device can be protected from accidental damage, the application rate can be reduced, and the process cost is reduced.

Provided is a formation method of a semiconductor device. The formation method includes: a substrate with is provided, grid electrode structures are formed on the surface of the substrate, a semiconductor material layer is formed on the surface of the top of each grid electrode structure, and sidewalls of the grid electrode structure are aligned with sidewalls of the semiconductor material layer; an interlayer dielectric layer is formed on the surface of the substrate; the interlayer dielectric layer with certain thickness is removed via etching, and surfaces of the sidewalls of the semiconductor material layer are exposed; oxidation treatment of the surfaces of the sidewalls of the semiconductor material layer is performed, and the semiconductor material layer with certain width is converted to a sacrificial layer; the sacrificial layer is removed; a metal layer is formed on the surface of the top and the surfaces of the sidewalls of the remaining semiconductor material layer; and annealing treatment of the metal layer is performed, the metal layer reacts with the remaining semiconductor material layer, and a metal contact layer is formed on the surface of the top of each grid electrode structure. According to the formation method, the metal contact layers are additionally provided so that over-short distance or mutual contact of the adjacent metal contact layers are prevented, and the reliability and the yield of the semiconductor device are increased.