Method for manufacturing shallow groove isolation structure

Abstract

The invention discloses a method for manufacturing a shallow groove isolation structure, which comprises: forming a hard mask of which an opening exposes from a substrate, and oxidizing the substrate in an oxygen atmosphere; and forming a shallow groove on the substrate at the position of the opening by a dry etching method after the oxidation treatment. The method for manufacturing the shallow groove isolation structure can form a relatively round shallow groove top chamber and reduce the probability of process defects.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a shallow trench isolation structure. Background technique [0002] Currently, device isolation using shallow trench isolation technology has become a conventional technology. Figure 1 ~ Figure 4 It is a schematic diagram of a part of the manufacturing process of a common shallow trench isolation structure. refer to figure 1 As shown, first, a field oxide layer 11 and a nitride layer 12 are sequentially formed on a silicon substrate 10 . refer to figure 2 As shown, then, a photoresist layer is formed on the nitride layer 12, and a photoresist pattern 13 is formed by photolithography, and the photoresist pattern 13 is used to define the shape of the shallow trench. refer to image 3 As shown, thereafter, using the photoresist pattern 13 as a mask, the nitride layer 12 and the field oxide layer 11 are sequentially etched to form ...

AI Technical Summary

Problems solved by technology

[0009] The present invention solves the problem that there is a sharp chamfer at the top of the shallow trench formed in the prior ar

Images