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68results about How to "Process defect reduction" patented technology

Hafnium silicate environment barrier coating for ceramic-based composite material matrix and preparation method thereof

The invention provides a hafnium silicate environment barrier coating for a ceramic-based composite material matrix and a preparation method thereof. The preparation method comprises the following steps: (1) mixing HfO2 and SiO2, carrying out wet mixing and ball milling on a ball mill, drying, grinding, sieving, sintering, and carrying out a high-temperature solid-phase reaction; (2) after the high-temperature solid-phase reaction is finished, adding deionized water for slurry preparation, then performing ball milling, and performing spray granulation to obtain an HfSiO4 powder material; (3) firstly spraying a Si layer on the surface of a ceramic-based composite matrix as a priming coat, and then spraying the HfSiO4 powder material on the surface of the priming coat as a surface layer to form a multi-layer coating; and (4) carrying out a heat treatment on the multi-layer coating to obtain the environmental barrier coating. Due to the added heat treatment, the crystallinity of the HfSiO4 surface layer is improved, the binding force of each layer of the coating is better, the stability is higher, and the water and oxygen resistance of the environment barrier coating is greatly improved. The provided preparation method is simple and easy to control, and is easy for industrial production and application.
Owner:WUHAN UNIV OF TECH

Process method for carrying out bead welding on steel with aluminum bronze

The invention discloses a process method for carrying out bead welding on steel with aluminum bronze. The process method comprises the following steps that firstly, a stainless steel wire wheel is used for removing an oxidation film on a face to be subjected to bead welding of a bead welding workpiece; then, overall preheating is carried out on the bead welding workpiece, the preheating temperature is 150 DEG C-200 DEG C, and the temperature is kept for 0.5-1 hour after preheating; and next, arc blowout plates are additionally arranged on the two sides of the face to be subjected to bead welding, continuous welding is carried out on the bead welding workpiece through consumable electrode inert gas shielded welding, the bead welding interlayer-temperature is larger than or equal to 150 DEGC, reasonable welding materials and welding process parameters are selected, after welding is completed, annealing heat treatment is carried out on the bead welding workpiece, the initial temperatureis 100 DEG C-150 DEG C, the temperature is kept for 2-2.5 hours after the temperature is gradually raised to 300 DEG C-400 DEG C, the temperature is kept for 1-1.5 hours after the temperature is raised to 500 DEG C-560 DEG C, and after the bead welding workpiece is cooled to 200 DEG C along with a furnace, the bead welding workpiece is output out of the furnace to be subjected to air cooling to the room temperature. By means of the design, the bead welding quality is good, and the bead welding quality is high.
Owner:WUHAN MARINE MACHINERY PLANT

Double-vertical-channel transistor, integrated circuit memory and preparation method thereof

The invention provides a double-vertical-channel transistor, an integrated circuit memory and a preparation method thereof. A first trench extending along a first direction is formed in the vertical fin; first source/drain regions are formed in the fins at the tops of the two sides of the first trench; a second source/drain region is formed in the fin at the bottom of the first trench; a first gate structure is filled in the first trench and extends along the first direction; the embedded wires are filled in the second trench in the side wall, extending along the second direction, of the vertical fins, so that the first source/drain regions on the two sides of the first trench and the second source/drain region at the bottoms of the first trench respectively form double vertical L-shaped channels, the effective channel length is increased, and the short channel effect is overcome; and the second source/drain region and the electric connection embedded wire thereof are positioned at thebottom of the transistor and do not need to be directly led out from the upper surface, so that isolation at the periphery of the transistor is easier to form, the device area is reduced, the processis simplified and the performance is improved.
Owner:CHANGXIN MEMORY TECH INC

Rear compartment door tailor welding tool

The invention discloses a rear compartment door tailor welding tool which comprises a compartment tailor welding base plate, a fixing compression mechanism, clamping mechanisms and a hanging lug mold. The fixing compression mechanism comprises a compartment positioning assembly, a plurality of compartment compression assemblies and a plurality of compartment adjusting assemblies, wherein the compartment positioning assembly is fixed to the upper surface of the compartment tailor welding base plate so as to position a rear compartment door, the compartment compression assemblies are fixed to the two sides of the compartment tailor welding base plate so as to compress the rear compartment door, and the compartment adjusting assemblies are fixed to the surface of the periphery of the compartment tailor welding base plate. The clamping mechanisms are fixed to the front end and the rear end of the upper surface of the compartment tailor welding base plate and matched with clamping portions of the rear compartment door. The hanging lug mold is fixed to the front end of the compartment tailor welding base plate and matched with a hanging lug at the front end of the rear compartment door. According to the rear compartment door tailor welding tool, the problems that deviation is prone to occurrence, adjustment is difficult and stability is poor when manual tailor welding is adopted can be solved, and therefore welding quality can be improved.
Owner:广西玉柴专用汽车有限公司

Martensitic stainless steel pump case product for manufacturing spray pump of containment for nuclear power plant

The invention relates to a martensitic stainless steel pump case product for manufacturing a spray pump of a containment for a nuclear power plant. High purity molten steel with low gas content and uniform components is obtained by intermediate frequency furnace and VOD duplexing smelting; process parameters are obtained by system design of industrial analysis, chromite sands are used in a pump case runner, and the outer layer of the chromite sands is cast by furan resin sands to ensure that the runner is smooth and level; the accuracy of a core assembly and a lower core is ensured by using a snap-gauge, so that the dimensional tolerance of the runner satisfies the requirement; thermal treatment process parameters are adjusted through a process test, in-furnace temperature, temperature raising rate, insulating temperature, quenching temperature and quenching transfer time are controlled, and the problems of low impact performance and high hardness are solved through tempering twice. The problem that previous cast product is more in porosity defect, severe in surface sand burning, poor in dimensional precision of the runner and relatively poor in mechanical property is solved, and the corrosion-resistant martensitic stainless steel pump case cast which is high in dimensional precision, few in technical defect, compact in internal tissue and free of sand burning in the cavity of the runner is obtained.
Owner:遵义拓特铸锻有限公司

Semiconductor structure and manufacturing method thereof

The invention provides a semiconductor structure and a manufacturing method thereof, and the method comprises the steps: providing a substrate, and sequentially forming a pattern definition layer, a pattern transfer layer and a pattern mask layer on the substrate; etching the pattern mask layer to form a first groove exposing the pattern transfer layer; the pattern transfer layer at the bottom of the first groove is etched, a second groove exposing the pattern definition layer is formed, and the side wall of the second groove is perpendicular to the upper surface of the pattern definition layer; and carrying out ion doping on the exposed pattern definition layer through the first groove and the second groove, wherein the pattern definition layer doped with ions is used as a metal blocking layer. Compared with the prior art, the metal blocking layer with the same size can be finally formed by forming the first groove with the small opening size, so that the adjacent metal blocking layers can be formed in the same process step, the process steps are simplified, the manufacturing time is saved, the occurrence rate of process defects is reduced, and the cost is reduced.
Owner:SHANGHAI INTEGRATED CIRCUIT EQUIP & MATERIALS IND INNOVATION CENT CO +1

Method for manufacturing MOS grid device

The invention discloses a method for manufacturing an MOS grid device. The method includes the following steps that a grid medium layer, a grid layer, a grid heightening layer and an etching retaining layer are sequentially formed on the surface of a semiconductor substrate; the photoetching technology is used for forming a grid graph structure; a body zone is formed; a source zone is formed by photoetching through the filling technology; a side wall layer is deposited; comprehensive etching is carried out on the side wall layer and a relative-width side wall is formed; the etching technology is adopted and autoregistration etching is carried out on the relative-width side wall to form a grid hole forming zone and a source zone hole forming zone; a front face metal layer is deposited; a front face electrode leading-out terminal is formed through photoetching in an etching mode. Compared with a traditional photomask registration technology, the requirement for photoetching precision is lowered. Meanwhile, the evenness and uniformity of the relative-width side wall are ensured, and therefore defects caused by the mask technology and the limitation on the current density are reduced, device density can be improved, and therefore the integration degree is improved. In addition, the additional etching barrier layer can also lower the precision requirement for the etching technology and the difficulty of the etching technology is lowered.
Owner:宁波达新半导体有限公司 +1

Automobile front combination lamp sealing structure

The invention relates to an automobile front combination lamp sealing structure which comprises a headlamp mask, a plurality of lamplet masks arranged in the headlamp mask and connected with the headlamp mask, light guide plates arranged in the lamplet masks and circuit boards arranged at the rear ends of the light guide plates, and is characterized in that inner clamping parts are arranged on the inner side of the headlamp mask; outer clamping parts are arranged at the rear parts of the lamplet masks; the outer clamping parts of the lamplet masks and the inner clamping parts of the headlamp mask are correspondingly clamped to form U-shaped glue grooves; sealant is coated in the rubber grooves; a rubber rib is arranged at the rear end of the light guide plate, and the rubber rib at the rear end of the light guide plate is inserted into the rubber groove coated with the sealant to form a complete local sealing structure. A complete local sealing structure can be formed, the problem that fogging on the local area of the surface of the lamp mask cannot be eliminated is solved, the appearance quality of the automobile lamp is improved, and the product percent of pass is increased; and the processing procedure can be simplified, and the processing cost is reduced.
Owner:深蓝汽车科技有限公司

Semiconductor process processing system and method

The present invention provides a semiconductor process processing system and a method, wherein processing defects arising during processing of a semiconductor wafer prior to back-grinding are reduced with systems and methods of sensor placement. The system comprises one or more holes bored into a chuck table for receiving semiconductor wafers; or a support table next to the chuck table; one or more sensors disposed in the holes for monitoring parameters during a pre-back-grinding (PBG) process; a control box converting a set of signals received from the sensors; a computer-implemented process control tool receiving the converted set of signals from the control box and determining whether the PBG process will continue.
Owner:TAIWAN SEMICON MFG CO LTD

Compartment suspension loop mold

The invention discloses a compartment suspension loop mold. The compartment suspension loop mold comprises a compartment fixing rack, two first fixed pin shafts, two second fixed pin shafts, and two third fixed pin shafts, wherein the compartment fixing rack is matched with a compartment opening of the compartment in a sleeving way; a bottom support steel channel clamped with an inner bottom plate of the compartment is arranged on the compartment fixing rack; the two first fixed pin shafts are respectively arranged on two sides of the lower part of the compartment fixing rack, and are used for fixing and locating two first suspension loops on the lower end of the compartment; the two second fixed pin shafts are respectively arranged on two sides of the middle part of the compartment fixing rack, and are used for fixing and locating two oil cylinder bases in the middle of the compartment; the two third fixed pin shafts are respectively arranged on two sides of the upper part of the compartment fixing rack, and are used for fixing and locating two second suspension loops on the upper part of the compartment. According to the device, the concentricity of the suspension loops and the oil cylinder base can be ensured, the dimension error is reduced, and the quality of the welded compartment suspension loops and the oil cylinder base is higher.
Owner:广西玉柴专用汽车有限公司
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