Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Radio frequency laterally diffused metal oxide semiconductor (LDMOS) component and manufacturing method thereof

A radio frequency and device technology, applied in the field of semiconductor integrated circuit manufacturing, can solve problems such as complex manufacturing process, and achieve the effects of reducing metal deposition, simple manufacturing process and improving breakdown voltage

Active Publication Date: 2013-04-10
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF3 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the manufacturing process of RF LDMOS with two or more metal layers, the Faraday shield needs to be made with two (or more) metal layers, at least two metal layer deposition and etching processes are required, and the manufacturing process is complicated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Radio frequency laterally diffused metal oxide semiconductor (LDMOS) component and manufacturing method thereof
  • Radio frequency laterally diffused metal oxide semiconductor (LDMOS) component and manufacturing method thereof
  • Radio frequency laterally diffused metal oxide semiconductor (LDMOS) component and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] Such as Figure 4 It is a schematic diagram of an embodiment of the structure of the radio frequency LDMOS device of the present invention; the radio frequency LDMOS device of the embodiment of the present invention includes:

[0048] The P-type epitaxial layer 10 is formed on a semiconductor substrate such as a silicon substrate 1 .

[0049] The N-type drain end lightly doped drift region 12 is formed in the P-type epitaxial layer 10 .

[0050] A P well 11 is formed in the P-type epitaxial layer 10 , and there is a lateral distance between the P well 11 and the N-type drain end lightly doped drift region 12 .

[0051] A polysilicon gate 15 is formed above part of the P well 11 and is separated from the P well 11 by a gate oxide layer 14, and the part of the P well 11 covered by the polysilicon gate 15 is used to form a channel, The polysilicon gate 15 and the gate oxide layer 14 also extend to the P-type epitaxial layer 10 near the drain end and overlap with the N-ty...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Widthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a radio frequency laterally diffused metal oxide semiconductor (LDMOS) component. A faraday shield is a single metal layer. A part, above a drain terminal drift region, of the faraday shield comprises more than three vertical structures, wherein the depths of the vertical structures decrease in sequence. Arrangement of the vertical structures can play a role in lifting an electric field. Due to difference combination of the lengths of the vertical structures and difference of distances of drain terminals, the electric field below the faraday shield can be distributed more evenly, and breakdown voltage of the component is improved. Without deposition of multi-layer metal, the radio frequency LDMOS component can achieve a high breakdown voltage, a metal deposition and corrosion process during a manufacturing process of the component can be reduced, manufacturing technology of the component is simple, and technology cost of the component is lowered. The invention further discloses a manufacturing method of the radio frequency LDMOS component.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a radio frequency LDMOS device; the invention also relates to a method for manufacturing the radio frequency LDMOS device. Background technique [0002] RF LDMOS (Radio Frequency Laterally Diffused Metal Oxide Semiconductor) device is a new generation of integrated solid microwave power semiconductor product that is a fusion of semiconductor integrated circuit technology and microwave electronic technology. It has good linearity, high gain, high withstand voltage, and output power. Large size, good thermal stability, high efficiency, good broadband matching performance, easy to integrate with MOS process, etc., and its price is much lower than that of gallium arsenide devices. It is a very competitive power device and is widely used in GSM , PCS, W-CDMA base station power amplifier, and wireless broadcasting and nuclear magnetic resonance, etc. [00...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/78H01L29/06H01L21/336
Inventor 李娟娟慈朋亮钱文生董金珠韩峰
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com