Semiconductor structure and formation method thereof
A technology of semiconductor and gate structure, applied in the field of semiconductor structure and its formation, can solve problems such as poor performance of vertical nanowire transistors, and achieve the effects of reduced etching, high integration and simple etching process
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[0038] The prior art semiconductor structure has many problems, for example, the performance of the semiconductor structure is poor.
[0039] Now combine a semiconductor structure to analyze the reasons for the poor performance of the semiconductor structure:
[0040] Because the conventional planar transistor occupies a large substrate surface, the integration of the semiconductor structure is low. In order to improve the integration of the formed semiconductor structure, a vertical nanowire transistor is proposed.
[0041] figure 1 with figure 2 It is a schematic diagram of the structure of each step of a method for forming a vertical nanowire transistor.
[0042] Please refer to figure 1 , A substrate 130 is provided, the surface of the substrate 130 has a fin pillar 131, the fin pillar 131 includes a bottom region I, a channel region II located on the bottom region I, and a top portion located on the channel region II Zone III.
[0043] Continue to refer figure 1 , The sidewalls ...
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