Process of improving the plugging of oxide recess through a contact hole

A process method and oxide technology, applied in the manufacturing of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve problems such as aggravating the curvature of contact holes, and achieve the effect of improving overall performance

Active Publication Date: 2018-02-23
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, during the pre-cleaning process, the use of dilute hydrofluoric acid (DHF) and SCl solution will further aggravate the bowing profile of the longitudinal section of the contact hole (Channel Hole)

Method used

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  • Process of improving the plugging of oxide recess through a contact hole
  • Process of improving the plugging of oxide recess through a contact hole
  • Process of improving the plugging of oxide recess through a contact hole

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Embodiment Construction

[0036] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0037] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as ch...

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Abstract

The invention provides a process of improving the plugging of oxide recess through a contact hole. The wet etching (DHF+SCI) is replaced by plasma dry etching in the pre-cleaning process, and therebythe situation that the worsening of the bowing profile morphology of a channel hole caused by the excessively-fast etching of oxide layers deposed by atomic layer deposition technology (ALD) due to the fact that the wet etching rate of the ALD oxide and that of the PECVD oxide are different can be prevented. With the anisotropy characteristics of the plasma dry etching, the situation that the pre-cleaning process mainly aims at the surface of the bottom part of the silicon groove and the etching of the side wall of the contact hole is little can be controlled, and the worsening of the bowing profile morphology of the channel hole can be prevented. Accordingly, the integral performance of the 3D NAND flash memory can be improved.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a 3D NAND flash memory structure, in particular to a process method for improving the recess of a contact hole plug oxide. Background technique [0002] With the development of planar flash memory, the production process of semiconductors has made great progress. However, in recent years, the development of planar flash memory has encountered various challenges: physical limits, existing development technology limits, and storage electron density limits. In this context, in order to solve the difficulties encountered in planar flash memory and pursue lower production costs per unit storage unit, various three-dimensional (3D) flash memory structures have emerged, such as 3D NOR (3D or not) flash memory and 3D NAND (3D NAND) flash memory. [0003] Among them, 3D NAND takes its small size and large capacity as the starting point, and a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L27/11568H01L27/11578
CPCH01L21/76802H01L21/76826H10B43/20H10B43/30
Inventor 何佳刘藩东张若芳王鹏吴林春夏志良霍宗亮
Owner YANGTZE MEMORY TECH CO LTD
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