Copper-molybdenum metal etching solution and application thereof

A metal etching, copper-molybdenum technology, applied in the field of copper-molybdenum metal etching solution, can solve the problems of etching rate difference, copper hollowing corrosion, etc., to avoid copper hollowing, reduce wastewater treatment costs, and solve copper metal layer hollowing corrosion Effect

Pending Publication Date: 2021-11-19
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Different metals will have different etching rates due to different reduction potentials, which will lead to the problem of copper hollowing corrosion during the etching process
[0004] Therefore, the present application urgently needs to provide an etchant with good etching stability and a consistent etching rate for the currently used copper-molybdenum double-layer metal structure layer, so as to solve the copper hollowing corrosion problem caused by the different oxidation-reduction potentials of copper-molybdenum of etchant

Method used

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  • Copper-molybdenum metal etching solution and application thereof
  • Copper-molybdenum metal etching solution and application thereof
  • Copper-molybdenum metal etching solution and application thereof

Examples

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Effect test

Embodiment 1

[0051] This embodiment provides a copper molybdenum metal etching solution, the composition of the copper molybdenum metal etching solution includes: 1wt% hydrogen peroxide, 10wt% shape control agent, 0.01wt% etching stabilizer, 13wt% % of chelating agent, 0.01wt% of pH regulator and 2.39wt% of etching additive, and the balance of deionized water.

[0052] The shape control agent is selected from furan and 5-aminotetrazole.

[0053] The etching stabilizer is selected from monoammonium phosphate and diammonium phosphate.

[0054] Described chelating agent selects iminoacetic acid for use.

[0055] The etching additive is selected from acetic acid.

[0056] The pH value of the copper-molybdenum metal etching solution is 4. Described pH adjusting agent selects potassium carbonate for use.

[0057] The etching temperature of the copper-molybdenum metal etching solution is 28°C.

Embodiment 2

[0059] This embodiment provides a copper molybdenum metal etching solution, the composition of the copper molybdenum metal etching solution includes: 21wt% hydrogen peroxide, 0.01wt% shape control agent, 5wt% etching stabilizer, 1wt% % of chelating agent, 8wt% of pH regulator and 0.01wt% of etching additive, and the balance of deionized water.

[0060] The shape control agent is selected from pyrrolidone and hydroxymethylbenzotriazole.

[0061] Described etching stabilizer selects sodium hydrogen phosphate, potassium hydrogen phosphate for use.

[0062] Described chelating agent selects nitrilotriacetic acid for use.

[0063] The etching additive is selected from butyric acid.

[0064] The pH value of the copper-molybdenum metal etching solution is 5. Described pH adjusting agent selects sodium hydroxide for use.

[0065] The etching temperature of the copper-molybdenum metal etching solution is 35°C.

Embodiment 3

[0067] This embodiment provides a copper molybdenum metal etching solution, the composition of the copper molybdenum metal etching solution includes: 6wt% hydrogen peroxide, 8wt% shape control agent, 0.5wt% etching stabilizer, 6wt% % of chelating agent, 0.5wt% of pH regulator and 1.8wt% of etching additive, and the balance of deionized water.

[0068] The shape control agent is selected from hydroxymethylbenzotriazole.

[0069] The etch stabilizer is selected from monoammonium phosphate.

[0070] Described chelating agent selects sarcosine for use.

[0071] The etching additive is selected from formic acid.

[0072] The pH value of the copper-molybdenum metal etching solution is 4.5. Described pH regulator selects sodium carbonate, sodium hydroxide for use.

[0073] The etching temperature of the copper-molybdenum metal etching solution is 30°C.

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Abstract

The invention discloses a copper-molybdenum metal etching solution and application thereof. The copper-molybdenum metal etching solution comprises the following components in percentage by weight: 1-21wt% of hydrogen peroxide, 0.01-10 wt% of a shape control agent, 0.01-5 wt% of an etching stabilizer, 1-13 wt% of a chelating agent, 0.01-8 wt% of a pH regulator, 0.01-2.39 percent of an etching additive and the balance of deionized water. According to the copper-molybdenum metal etching solution disclosed by the invention, the consistent etching rate on a copper-molybdenum double-layer metal structure layer can be kept in the etching process, the defect of copper hollowing corrosion caused by oxidation-reduction potential difference of copper-molybdenum double-layer metal is overcome, and a copper-molybdenum metal structure layer meeting the requirements is prepared.

Description

technical field [0001] The present application relates to the technical field of metal etching, in particular to a copper-molybdenum metal etching solution and its application. Background technique [0002] Display technology is the process of converting data information into visual information driven by electrical signals, and thin film transistor liquid crystal display (hereinafter referred to as: TFT-LCD) is the earliest product developed and commercialized. TFT-LCD has been widely used gradually because of its environmental protection, high performance, light and thin, and a series of advantages. At present, high-generation TFT-LCD liquid crystal panel displays tend to be large in size, high resolution and high frequency drive, etc., and play a key role as TFT devices connecting data lines and pixel switches. In this context, traditional aluminum metal materials are gradually unable to meet the needs of TFT-LCD due to their large resistivity, high thermal expansion coef...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C23F1/26C23F1/02
CPCC23F1/18C23F1/26C23F1/02
Inventor 郭前程
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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