31results about How to "Etch stable" patented technology

The invention discloses a method for etching a flat surface of a metal product and a curved surface connected with the flat surface. According to the method, a concavo-convex continuous microstructure is formed in the surface of the metal product by controlling the size of mask blocks and mask gap on the flat surface and the curved surface of the metal product and controlling related process parameters such as etching time, etching pressure and the like in an etching process; the depth of each pit is gradually reduced from the center of the flat surface to the edge of the curved surface; the section of the pit is shaped like a trough arc of sine wave; each projection does not have an obvious edge; the adaption part of the projection is in smooth transition; the section of the projection is similar to a quadrangular shape; the whole structure is in gentle transition; the microstructure takes on gradual transition connection of from existence to null and has good visual and tactile effects; and the requirements on higher anti-skid performance and attractive appearance can be met.

A plasma processing apparatus includes: a vessel which includes a reaction chamber, atmosphere within the reaction chamber capable of being depressurized; a lower electrode which supports an object to be processed within the reaction chamber; a dielectric member which comprises a first surface and a second surface opposite to the first surface, and which closes an opening of the vessel such that the first surface opposes an outside of the reaction chamber and the second surface opposes the object to be processed; and a coil which opposes the first surface of the dielectric member, and which generates plasma within the reaction chamber. An electrode pattern and an insulation film which covers the electrode pattern are formed on the second surface of the dielectric member.

The invention discloses a solar cell production process including the steps of texturing, diffusion, phosphor silicon chip cleaning, silicon nitride plating, etching and back polishing, screen printing, and sintering. In the step of phosphor silicon chip cleaning, a mixed solution of HF or HF and HNO3, HCI is adopted; and in the step of etching and back polishing, a silicon chip is soaked in alkali lye having a concentration of 5-35%, and the back side of the silicon chip is etched and polished. The production process is stable, and is good in etching effect and good in polishing.

The invention provides wet etching equipment. The wet etching equipment comprises a bearing platform used for bearing a substrate, a spraying pipe which is arranged above the bearing platform for spraying an etching liquid to the surface of the substrate, a liquid knife which is arranged between the bearing platform and the spraying pipe and used for coating the surface of the substrate with the etching liquid, and an etching groove which is formed below the bearing platform and used for accommodating the etching liquid and the substrate; therefore, the three kinds of etching modes, including a spray mode, a dip mode and a puddle mode, can be integrated into the same etching unit, so that the machine table structure is reduced, the occupied space of the machine table is reduced, and the maintenance cost and time are lowered; and in addition, the substrate on the bearing platform moves along with the bearing platform in the etching process, without needing to transfer the substrate independently, so that the etching process is more stable, thereby reducing generation of mura.

The invention discloses an etching solution composition and an etching method for copper-molybdenum film layers. The etching solution composition comprises hydrogen peroxide, a hydrogen peroxide stabilizer, an etching additive, a pH regulator and deionized water. The etching solution composition does not contain fluoride, so that the etching solution composition is friendly to production line operators and the environment, and the waste etching solution treatment cost is greatly reduced; and meanwhile, the etching requirements of current conventional copper/molybdenum film layers can be met, and the etching process is stable.

To provide an etching composition for a thin-film transistor liquid-crystal display device employed for selective etching of a transparent conductive film (such as an ITO film) of the thin-film transistor liquid-crystal display, the etching composition having a property of a low aging rate, minimizing the influence on other metal wirings so that a stable etching can be effected, and having a high etching rate and the capability of reducing side etching.

The embodiment of the invention discloses a copper-aluminum film etching solution. The copper-aluminum film etching solution comprises the following components in percentage by weight relative to the total weight of the etching solution: 4%-10% of hydrogen peroxide, 0.1%-1% of a hydrogen peroxide stabilizer, 0.05%-0.5% of an etching inhibitor, 10%-30% of a chelating agent, 0.2%-2% of a surfactant, 0.2%-5% of inorganic phosphate or inorganic hydrophosphate, 0.1%-5% of inorganic acid, 0-0.05% of fluoride and the balance of deionized water. The etching solution provided by the invention has relatively long service life.

Disclosed is a substrate processing device that can directly detect the concentration of a processing liquid, and thus is able to perform independent concentration control mostly without being affected by the temperature of the processing liquid, and is able to accurately perform chemical processing of a substrate. The substrate processing device, which processes by immersing the substrate in the processing liquid comprising a mixture of a chemical and a diluting liquid, is provided with: a processing tank (1) that retains the processing liquid; heating means (2, 3) that heat the processing liquid; a temperature detection means (4) that detects the temperature of the processing liquid; a temperature control means (5) that operates the aforementioned heating means (2, 3) in a manner so that the detected temperature approaches a set temperature; a replenishing means (6) that replenishes the diluting liquid in the processing liquid; a concentration detection means (7) that detects the concentration of the processing liquid by measuring the light absorption characteristics of the processing liquid; and a concentration control means (8) that operates the aforementioned replenishing means (6) in a manner so that the detected concentration approaches a set concentration.

The invention belongs to the technical field of chemical etching of metal materials, and particularly discloses an ammonium persulfate system etching solution for etching a TFT copper-molybdenum alloylayer. The etching solution is prepared from the following raw materials in percentage by weight: 5%-30% of ammonium persulfate, 0.01%-1% of a stabilizer, 0.1%-10% of a regulator, 0.05%-0.5% of a corrosion inhibitor A, 0.05%-0.5% of a corrosion inhibitor B and the balance of ultrapure water. The ammonium persulfate system etching solution for etching the TFT copper-molybdenum alloy layer is goodin etching characteristic, good in etching slope straightness, free of molybdenum residues and undercut and very high in industrial value.

The invention provides an etching solution composition and a method for forming a metal circuit. The etching solution composition comprises 10-20wt% of hydrogen peroxide, 4-13wt% of organic acid, 1-5wt% of hydrogen peroxide stabilizer, 2-10wt% of organic base, 0.001-1wt% of corrosion inhibitor, 2-5wt% of PH buffering agent and 47-80wt% of deionized water. The method comprises the step of etching acopper-containing metal film by using the etching solution composition to pattern the copper-containing metal film to form the metal circuit.

The invention discloses a nanometer treatment method for stainless steel. The nanometer treatment method comprises the steps of degreasing, hot water cleaning, dry ice cleaning, nanometer treatment, water washing, dry ice cleaning, alkaline etching, twice successive water cleaning, neutralization and water washing. In the nanometer treatment step, 250-300 g/L of ferric trichloride, 50-100 g/L of hydrochloric acid, 20-30 g/L of Cu2+ and 5-10 g/L of sodium dihydrogen phosphate are selected to be used. Nanometer treatment is conducted for 60-240 seconds at the temperature of 20-60 DEG C. The nanometer treatment method is mild in reaction and uniform in etching speed; pits at the nanometer scale can be formed in the surface of the stainless steel, and the formed pits are uniform; and the process is completed by one step, so that the time cost is saved. Copper ions are used, and therefore, etching can be implemented steadily; formed holes are uniform in depth; the formed pits are filled with resin in the injection molding process, so that tight connection is achieved between the resin and the surface of the stainless steel; and the bonding strength between the resin and the steel is improved.

The embodiment of the invention discloses a fluoride-free etching agent and an etching method thereof. The fluoride-free etching agent comprises the following components of, in percentage by weight, 1wt%-25wt% of hydrogen peroxide, 0.01wt%-3wt% of an etching stabilizer, 1wt%-20wt% of an etching inhibitor, 0.01wt%-4wt% of a pH adjusting agent, 1wt%-10wt% of an auxiliary oxidant, 0.01wt%-0.8wt% of an etching additive, and the balance deionized water. The fluorine-free etching agent is stable in etching, does not contain fluorine, does not damage a glass substrate, is easy in waste water recovery, and more importantly, solves the metal molybdenum residue phenomenon generated in the copper/molybdenum etching process, and can obtain a better patterned metal layer.

The invention particularly relates to a wet electronic chemical silicon-based material etching solution. The solution comprises the following components in parts by weight: 25-45 parts of methanesulfonic acid; 10-30 parts of fluoride; 30-60 parts of a water-soluble acid; 0.5-9.5 parts of a complexing agent; 0.5-3.5 parts of a wetting agent; and the balance of water which makes the total parts of the components be 100 parts. The water-soluble acid comprises at least one of nitric acid, sulfuric acid, phosphoric acid, perchloric acid, sulfinic acid, formic acid, acetic acid, citric acid, isocitric acid and glycolic acid. The fluoride comprises at least one of trifluoromethanesulfonic acid, sodium fluoride, sodium hydrogen fluoride, ammonium fluoride, ammonium hydrogen fluoride, ammonium fluoborate, potassium fluoride, potassium hydrogen fluoride, aluminum fluoride, fluoboric acid, lithium fluoride, potassium fluoborate and calcium fluoride. The wet electron chemical silicon-based material etching solution can be used for safely, stably and efficiently etching a silicon substrate, can well solve the problem of insoluble byproducts generated in the etching process, has lower industrial safety risk in the production process, and lowers the cost required in a wastewater treatment procedure.

This invention discloses a silicon IMD CMP film process method, which reduces the production circle and flats the isolation layer oxygen film between the silicon metal align wires and improves the integration quality. The key points of this technique lies in the following: to automatically choose relative PCO film forming conditions according to the thickness of the remain film of silicon pad IMD and CMP.

The invention discloses a hydrofluoric acid etching solution for etching a gallium indium zinc oxide film and application thereof, the mass percentage concentration of hydrofluoric acid is 0.2-1%, andthe etching temperature is at room temperature 20-30DEG C. The hydrofluoric acid etching solution is applied to the processing process of a transistor or a flash memory unit taking gallium indium zinc oxide as a communication layer, and particularly, the gallium indium zinc oxide film is deposited on the Al2O3 tunneling layer film as a communication layer. According to the method, the etching process is relatively stable, the formed surface is relatively smooth, the etching speed of the tunneling layer (Al2O3) on the lower layer of gallium indium zinc oxide is low, the caused loss is small, and the stability and high efficiency of the gallium indium zinc oxide device unit are maintained under the condition of low loss. The hydrofluoric acid etching solution can be used immediately after being prepared, so that the problems of unstable properties and short storage time of the mixed acid etching solution are solved.