Etching solution of igzo film layer and etching method thereof

Abstract

An etching solution for an IGZO film layer and an etching method therefor; the etching solution comprises an acid, a phosphate, hydrogen peroxide and water, and the pH value of the etching solution does not exceed 5, and the solution may effectively control etching rate such that etching rate is uniform, and thus an IGZO film layer (50) may be stably etched without introducing impurities that affect the electrical properties of IGZO, thereby effectively improving the stability of an IGZO-thin film transistor (TFT) device. The etching method for an IGZO film layer employs the foregoing etching solution for an IGZO film layer, and may effectively control etching rate such that etching rate is uniform, and thus an IGZO film layer (50) may be stably etched without introducing impurities that affect the electrical properties of IGZO, thereby effectively improving the stability of an IGZO-TFT device.

Description

technical field [0001] The invention relates to the production field of display panels, in particular to an etching solution for an IGZO film layer and an etching method thereof. Background technique [0002] With the development of display technology, liquid crystal displays are gradually developing in the direction of large size and high resolution, which means that the charging time for pixels is getting shorter and shorter, and the key to charging pixels is the display screen thin film transistor (Thin Film Transistor, TFT). The characteristics of the TFT are largely determined by the properties of the active layer. Traditional TFT devices usually use amorphous silicon (a-Si, AS) as the active layer. Due to the long-term development of AS-TFT devices, the device characteristics are stable, but the mobility of AS is low. Under the development trend of high resolution and high refresh rate, the original advantages are gradually lost. Another semiconductor material, Indi...

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Problems solved by technology

[0003] However, the stability of the current IGZO-TFT device needs to be improved. The IGZO active layer is very sensitive to the process and environment, and is easily affected by light, temperature, etc. At the same time, it is also greatly affected by the process, such as the Q -time (the time difference from the completion of the IGZO process to the next station), in the IGZO process, it is particularly affected by the IGZO etching solution, such as the etching uniformity of the etching solution itself, whether the etching solution will introduce some conductive impurities, etc., which greatly affect The stability of the IGZO-TFT device is affected, such as causing IGZO Vth (turn-on voltage) drift or abnormal leakage current, etc.

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