Etching solution for IGZO film and etching method thereof

An etching solution and film layer technology, applied in chemical instruments and methods, surface etching compositions, electrical components, etc., can solve the problems of particularly large influence, abnormality, IGZOVth drift leakage current, etc., to achieve uniform etching rate, improve Stability, stable etching effect
CN107564809AActive Publication Date: 2018-01-09SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
Publication Date
2018-01-09

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Abstract

The invention provides an etching solution for an IGZO (Indium Gallium Zinc Oxide) film and an etching method thereof. The etching solution for the IGZO film comprises an acid, a phosphate, hydrogen peroxide and water, and the pH value of the etching solution is not more than 5. By adopting the etching solution, the etching rate can be effectively controlled, so that the etching rate is uniform; the IGZO film can be etched stably, and some impuritiesaffecting the electrical properties of the IGZO are not introduced at the same time, so that the stability of an IGZO-TFT (Thin Film Transistor) device can be effectively improved. The etching method for the IGZO film adopts the etching solution for the IGZO film. By adopting the etching method, the etching rate can be effectively controlled, so that the etching rate is uniform; the IGZO film can be etched stably, and some impuritiesaffecting the electrical properties of the IGZO are not introduced at the same time, so that the stability ofan IGZO-TFT device can be effectively improved.
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Description

technical field

[0001] The invention relates to the production field of display panels, in particular to an etching solution for an IGZO film layer and an etching method thereof. Background technique

[0002] With the development of display technology, liquid crystal displays are gradually developing in the direction of large size and high resolution, which means that the charging time for pixels is getting shorter and shorter, and the key to charging pixels is the display screen thin film transistor (Thin Film Transistor, TFT). The characteristics of the TFT are largely determined by the properties of the active layer. Traditional TFT devices usually use amorphous silicon (a-Si, AS) as the active layer. Due to the long-term development of AS-TFT devices, the device characteristics are stable, but the mobility of AS is low. Under the development trend of high resolution and high refresh rate, the original advantages are gradually lost. Another semiconductor material, Indi...

Claims

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