Substrate processing device

A substrate processing device and processing liquid technology, applied in decorative art, technology for producing decorative surface effects, electrical components, etc., can solve the problem of rising concentration of processing liquid, inability to measure concentration, unstable etching speed of silicon nitride film, etc. problem, to achieve the effect of reducing the amount of etching, increasing the amount of etching, and stabilizing the etching

Active Publication Date: 2013-06-12
KURASHIKI BOSEKI KK +1
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  • Claims
  • Application Information

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Problems solved by technology

However, in actual operation, there is the following problem: when the diluent is added to the treatment liquid in order to control the concentration of the treatment liquid, since the temperature of the treatment liquid also changes, the temperature of the treatment liquid will not return to the se

Method used

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Example Embodiment

[0026] The substrate processing apparatus of the present invention is used for heating a processing liquid obtained by mixing a chemical liquid and a dilution liquid, and immersing a substrate in the processing liquid for processing. In this embodiment, an apparatus is used as an example for description. The processing liquid is a phosphoric acid solution containing phosphoric acid as a chemical solution and water as a diluent, and the phosphoric acid solution is heated while heating a substrate (for example, a semiconductor A silicon wafer) is immersed in the phosphoric acid solution for etching treatment.

[0027] This substrate processing apparatus includes a processing tank 1 for storing a phosphoric acid solution. A recovery tank 1 a for recovering the phosphoric acid solution overflowing from the processing tank 1 is provided around the processing tank 1 . The phosphoric acid solution recovered in the recovery tank 1a is returned to the treatment tank 1 via the circulat...

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Abstract

Disclosed is a substrate processing device that can directly detect the concentration of a processing liquid, and thus is able to perform independent concentration control mostly without being affected by the temperature of the processing liquid, and is able to accurately perform chemical processing of a substrate. The substrate processing device, which processes by immersing the substrate in the processing liquid comprising a mixture of a chemical and a diluting liquid, is provided with: a processing tank (1) that retains the processing liquid; heating means (2, 3) that heat the processing liquid; a temperature detection means (4) that detects the temperature of the processing liquid; a temperature control means (5) that operates the aforementioned heating means (2, 3) in a manner so that the detected temperature approaches a set temperature; a replenishing means (6) that replenishes the diluting liquid in the processing liquid; a concentration detection means (7) that detects the concentration of the processing liquid by measuring the light absorption characteristics of the processing liquid; and a concentration control means (8) that operates the aforementioned replenishing means (6) in a manner so that the detected concentration approaches a set concentration.

Description

technical field [0001] The present invention relates to a substrate processing apparatus for processing substrates such as semiconductor wafers, glass substrates for liquid crystal display devices, and glass substrates for photomasks (hereinafter, simply referred to as "substrates") using a processing liquid. A technique for controlling the concentration of the treatment liquid when the treatment is performed in the treatment liquid heated to a high temperature is useful. Background technique [0002] Conventionally, as such a substrate processing apparatus, one using, for example, high-temperature phosphoric acid (H 3 PO 4 ) solution to etch the silicon nitride film (SiN) on the surface of the substrate. [0003] For example, in a semiconductor wafer process, when a silicon nitride film is etched using a phosphoric acid solution, a silicon dioxide film (SiO 2 ). In this case, it is generally required that only the silicon nitride film is etched, and the silicon dioxide ...

Claims

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Application Information

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IPC IPC(8): H01L21/306H01L21/308
CPCH01L21/31111H01L21/67057H01L21/67086H01L21/67109H01L21/306B44C1/227
Inventor 清濑浩巳平木哲渡部博
Owner KURASHIKI BOSEKI KK
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