Substrate processing device
A substrate processing device and processing liquid technology, applied in decorative art, technology for producing decorative surface effects, electrical components, etc., can solve the problem of rising concentration of processing liquid, inability to measure concentration, unstable etching speed of silicon nitride film, etc. problem, to achieve the effect of reducing the amount of etching, increasing the amount of etching, and stabilizing the etching
A substrate processing device and processing liquid technology, applied in decorative art, technology for producing decorative surface effects, electrical components, etc., can solve the problem of rising concentration of processing liquid, inability to measure concentration, unstable etching speed of silicon nitride film, etc. problem, to achieve the effect of reducing the amount of etching, increasing the amount of etching, and stabilizing the etching
CN103155113AActive Publication Date: 2013-06-12KURASHIKI BOSEKI KK +1
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[0026] The substrate processing apparatus of the present invention heats a processing liquid obtained by mixing a chemical liquid and a diluent, and processes a substrate by immersing it in the processing liquid. In this embodiment, the following device is used as an example for description, that is, the treatment liquid is a phosphoric acid solution containing phosphoric acid as a chemical liquid and water as a diluent, the phosphoric acid solution is heated, and a substrate (such as a Silicon wafers) are dipped into the phosphoric acid solution for etching.
[0027] This substrate processing apparatus includes a processing tank 1 for storing a phosphoric acid solution. A recovery tank 1 a for recovering phosphoric acid solution overflowing from the treatment tank 1 is provided around the treatment tank 1 . The phosphoric acid solution recovered from the recovery tank 1a is returned to the treatment tank 1 through the circulation pipe 1b.
[0028] A circulation pump 9 , a h...
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Disclosed is a substrate processing device that can directly detect the concentration of a processing liquid, and thus is able to perform independent concentration control mostly without being affected by the temperature of the processing liquid, and is able to accurately perform chemical processing of a substrate. The substrate processing device, which processes by immersing the substrate in the processing liquid comprising a mixture of a chemical and a diluting liquid, is provided with: a processing tank (1) that retains the processing liquid; heating means (2, 3) that heat the processing liquid; a temperature detection means (4) that detects the temperature of the processing liquid; a temperature control means (5) that operates the aforementioned heating means (2, 3) in a manner so that the detected temperature approaches a set temperature; a replenishing means (6) that replenishes the diluting liquid in the processing liquid; a concentration detection means (7) that detects the concentration of the processing liquid by measuring the light absorption characteristics of the processing liquid; and a concentration control means (8) that operates the aforementioned replenishing means (6) in a manner so that the detected concentration approaches a set concentration.
Description
technical field [0001] The present invention relates to a substrate processing apparatus for processing substrates such as semiconductor wafers, glass substrates for liquid crystal display devices, and glass substrates for photomasks (hereinafter, simply referred to as "substrates") using a processing liquid. A technique for controlling the concentration of the treatment liquid when the treatment is performed in the treatment liquid heated to a high temperature is useful. Background technique [0002] Conventionally, as such a substrate processing apparatus, one using, for example, high-temperature phosphoric acid (H 3 PO 4 ) solution to etch the silicon nitride film (SiN) on the surface of the substrate. [0003] For example, in a semiconductor wafer process, when a silicon nitride film is etched using a phosphoric acid solution, a silicon dioxide film (SiO 2 ). In this case, it is generally required that only the silicon nitride film is etched, and the silicon dioxide ...
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Patent Timeline
12 Jun 2013
Publication
CN103155113A
- IPC
- H01L21/306; H01L21/308
- CPC
- H01L21/31111; H01L21/67057; H01L21/67086; H01L21/67109; H01L21/306; B44C1/227
- Inventors
- 清濑浩巳; 平木哲