Solar cell production process

A technology of solar cells and production processes, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low degree, edge leakage, damage to PN junction, etc.

Inactive Publication Date: 2015-10-07
ZUNYI NORMAL COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Over-etching will cause damage to the front PN junction, and etching marks will appear on the front of the battery, affecting the appearance; insufficient etching wil

Method used

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Embodiment 1

[0020] A solar cell production process, comprising the steps of:

[0021] (1) Texturing, with HF concentration of 5%, HNO 3 The concentration is 40%, the weight loss of the silicon wafer after texturing is about 0.3g, and the size of the textured surface is 3μm;

[0022] (2) Diffusion, heat up the textured silicon wafer to 865°C and pass it through 760 SCCM phosphorus source, 6 SLM nitrogen atmosphere, and 360 SCCM oxygen atmosphere to achieve the purpose of diffusion, and the diffusion resistance is controlled to 75Ω / □ ;

[0023] (3) To clean the phosphorous silicon wafers, clean the phosphorous silicon wafers by means of roller transmission in HF with a concentration of 10%, and increase the surface cleanliness of silicon wafers by means of roller transmission in NaOH solution with a concentration of 0.9%, and then use DI Water (deionized water) to clean the silicon wafer;

[0024] (4) Silicon nitride coating, under the conditions of 1150SCCM silane flow rate, 5800SCCM am...

Embodiment 2

[0029] A solar cell production process, comprising the steps of:

[0030] (1) Texturing, with HF concentration of 8%, HNO 3 The concentration is 30%, the weight loss of the silicon wafer after texturing is about 0.35g, and the size of the textured surface is 4μm;

[0031] (2) Diffusion, heat up the textured silicon wafer to 870°C, pass through 800 SCCM phosphorus source, 9 SLM nitrogen atmosphere, and 400 SCCM oxygen atmosphere to achieve the purpose of diffusion, and the diffusion resistance is controlled to 80Ω / □;

[0032] (3) Clean phosphorus silicon wafers, use roller drive to clean phosphorus silicon wafers in 15% HF, use roller drive in 1% NaOH solution to increase the surface cleanliness of silicon wafers, and then use DI water to clean silicon wafers ;

[0033] (4) Silicon nitride coating, under the conditions of 1200 SCCM silane flow rate, 6000 SCCM ammonia gas flow rate, and 5000W plasma discharge, silicon nitride film was coated on the front side of the silicon ...

Embodiment 3

[0038] A solar cell production process, comprising the steps of:

[0039] (1) Texturing, with HF concentration of 10%, HNO 3 The concentration is 40%, the weight loss of the silicon wafer after texturing is about 0.4g, and the size of the textured surface is 5μm;

[0040] (2) Diffusion. Heat up the textured silicon wafer to 870°C and pass it through 820 SCCM phosphorus source, 12 SLM nitrogen atmosphere, and 430 SCCM oxygen atmosphere to achieve the purpose of diffusion. The square resistance of diffusion is controlled to 85Ω / □;

[0041] (3) Clean phosphorus silicon wafers, use roller drive to clean phosphorus silicon wafers in 10% HF, use roller drive in 1.2% NaOH solution to increase the surface cleanliness of silicon wafers, and then use DI water to clean silicon wafers ;

[0042] (4) Silicon nitride coating, under the conditions of 1240 SCCM silane flow rate, 6100 SCCM ammonia gas flow rate, and 5200W plasma discharge, silicon nitride film is coated on the front side o...

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PUM

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Abstract

The invention discloses a solar cell production process including the steps of texturing, diffusion, phosphor silicon chip cleaning, silicon nitride plating, etching and back polishing, screen printing, and sintering. In the step of phosphor silicon chip cleaning, a mixed solution of HF or HF and HNO3, HCI is adopted; and in the step of etching and back polishing, a silicon chip is soaked in alkali lye having a concentration of 5-35%, and the back side of the silicon chip is etched and polished. The production process is stable, and is good in etching effect and good in polishing.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a solar cell production process. Background technique [0002] There are more than a dozen known semiconductor materials for making solar cells. At present, the most mature technology and commercially valuable solar cells are crystalline silicon solar cells. In the production of conventional crystalline silicon solar cells, the production process sequence is texturing, diffusion, etching, PECVD, and screen sintering. Under this process sequence, certain unstable factors will appear in the etching, that is, over-etching or under-etching. Over-etching will cause damage to the front PN junction, and etching marks will appear on the front of the battery, affecting the appearance; insufficient etching will cause edge leakage, affecting battery quality and battery efficiency. In addition, the existing etching has a certain back polishing effect, but the degree is not high. Contents of the ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/31H01L21/306
CPCH01L21/02107H01L21/306H01L31/1804Y02E10/547Y02P70/50
Inventor 黄海深袁占强袁江芝吴波杨秀德
Owner ZUNYI NORMAL COLLEGE
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