Ammonium persulfate system etching solution for etching TFT copper-molybdenum alloy layer

An ammonium persulfate and etching solution technology is applied in the field of chemical etching of metal materials, which can solve the problems of harmful nitrogen and oxygen gases and do not allow nitrate, and achieve stable etching process, good etching parameters, and long etching solution life. Effect

Inactive Publication Date: 2020-11-03
武汉迪赛新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, nitric acid is used in the etching solution formula, and the etching solution containing nitrate may generate nitrogen and oxygen gas harmful to the human body during the etching process. At present, many TFT manufacturers have clearly stated that no nitrate is allowed in the etching solution

Method used

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  • Ammonium persulfate system etching solution for etching TFT copper-molybdenum alloy layer
  • Ammonium persulfate system etching solution for etching TFT copper-molybdenum alloy layer
  • Ammonium persulfate system etching solution for etching TFT copper-molybdenum alloy layer

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Embodiment 1

[0055] Wherein the TFT substrate scanning electron microscope sectional view of embodiment 1 etchant etching is as figure 1 , the etching angle is 36.0°, the CDloss is 0.94um, and the straightness of the etching slope is good. The top view of the TFT scanning electron microscope etched by the etching solution of embodiment 1 is as figure 2 , it can be clearly seen that the etched substrate has no molybdenum residue and no undercut.

[0056] The etchant etching situation of comparative example is as follows:

[0057] The amount of ammonium persulfate is lower than 5% of the etching solution of Comparative Example 1, and the etching angle of the TFT substrate obtained by etching is greater than 50°.

[0058] The amount of ammonium persulfate is higher than 30% of the etching solution of Comparative Example 2, the etching angle of the TFT substrate obtained by etching is less than 30°, the CDloss is greater than 1.10um, and the straightness of the etching slope is not good.

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Abstract

The invention belongs to the technical field of chemical etching of metal materials, and particularly discloses an ammonium persulfate system etching solution for etching a TFT copper-molybdenum alloylayer. The etching solution is prepared from the following raw materials in percentage by weight: 5%-30% of ammonium persulfate, 0.01%-1% of a stabilizer, 0.1%-10% of a regulator, 0.05%-0.5% of a corrosion inhibitor A, 0.05%-0.5% of a corrosion inhibitor B and the balance of ultrapure water. The ammonium persulfate system etching solution for etching the TFT copper-molybdenum alloy layer is goodin etching characteristic, good in etching slope straightness, free of molybdenum residues and undercut and very high in industrial value.

Description

technical field [0001] The invention belongs to the technical field of chemical etching of metal materials, and in particular relates to an ammonium persulfate system etching solution for etching a TFT copper-molybdenum composite layer. Background technique [0002] The liquid crystal display includes a liquid crystal display panel and a backlight module, and the liquid crystal display panel includes a CF substrate, a TFT array substrate, and a liquid crystal material between the CF substrate and the TFT substrate. By supplying power to the TFT substrate or not, the direction of the liquid crystal molecules is controlled, and the light from the backlight module is projected onto the CF substrate to generate a picture. [0003] The liquid crystal panel is the heart of the liquid crystal display, accounting for more than 80% of the cost of the entire product, and its quality will directly affect the display's color, brightness, contrast, viewing angle and other functional para...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18
CPCC23F1/18
Inventor 詹洪邹玲张诗杨郭文勇罗晓锋陆飚
Owner 武汉迪赛新材料有限公司
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