Wet electron chemical silicon-based material etching solution and preparation method thereof

Abstract

The invention particularly relates to a wet electronic chemical silicon-based material etching solution. The solution comprises the following components in parts by weight: 25-45 parts of methanesulfonic acid; 10-30 parts of fluoride; 30-60 parts of a water-soluble acid; 0.5-9.5 parts of a complexing agent; 0.5-3.5 parts of a wetting agent; and the balance of water which makes the total parts of the components be 100 parts. The water-soluble acid comprises at least one of nitric acid, sulfuric acid, phosphoric acid, perchloric acid, sulfinic acid, formic acid, acetic acid, citric acid, isocitric acid and glycolic acid. The fluoride comprises at least one of trifluoromethanesulfonic acid, sodium fluoride, sodium hydrogen fluoride, ammonium fluoride, ammonium hydrogen fluoride, ammonium fluoborate, potassium fluoride, potassium hydrogen fluoride, aluminum fluoride, fluoboric acid, lithium fluoride, potassium fluoborate and calcium fluoride. The wet electron chemical silicon-based material etching solution can be used for safely, stably and efficiently etching a silicon substrate, can well solve the problem of insoluble byproducts generated in the etching process, has lower industrial safety risk in the production process, and lowers the cost required in a wastewater treatment procedure.

Description

technical field [0001] The invention relates to the field of etching solutions, in particular to a wet electronic chemical etching solution for silicon-based materials and a preparation method thereof. Background technique [0002] Silicon-based materials In the fields of semiconductor wafers, solar panels, IC integrated circuit boards, flat-panel displays, and plasma displays, silicon-based materials need to be etched in the preparation of liquid crystal display devices, plasma display devices, and the like. [0003] At present, the etching solutions used by chemically etching manufacturers basically use hydrofluoric acid as the main component, and then add other water-soluble acids as auxiliary. Because hydrofluoric acid is highly toxic and easy to volatilize, especially in the configuration, it needs to use higher temperature and concentration, which is not only dangerous in the production process, but also causes huge pollution to the environment. At the same time, by-pr...

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Problems solved by technology

Due to the high toxicity and easy volatilization of hydrofluoric acid, especially when it needs to be prepared at a high temperature and concentration, it is not only dangerous in the production process, but also causes great pollution to the environment. At the same time, the by-products produced by etching are easily adsorbed on the glass. , equipment and pipeline surface, resulting in poor product surface treatment effect, pipeline blockage and other problems, and the etching rate is unstable in the production process, the utilization rate of etching solution is relatively low, which will also cause a large amount of waste liquid treatment, and the treatment cost is also low increase accordingly