Wet electron chemical silicon-based material etching solution and preparation method thereof

A silicon-based material and electronic chemical technology, applied in the field of etching solution, can solve problems such as pipeline blockage, high toxicity of hydrofluoric acid, and environmental pollution

Inactive Publication Date: 2021-04-20
国创深圳新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high toxicity and easy volatilization of hydrofluoric acid, especially when it needs to be prepared at a high temperature and concentration, it is not only dangerous in the production process, but also causes great pollution to the environment. At the same time, the by-products produced by etching are easily adsorbed on the glass. , equipme

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The wet electronic chemical etching solution for silicon-based materials provided in this embodiment includes, in parts by weight: 25 parts of methanesulfonic acid; 13 parts of trifluoromethanesulfonic acid; 25 parts of nitric acid and 5 parts of citric acid ; Hydrochloric acid: 5 parts; Q75 (tetrahydroxypropyl ethylenediamine): 3 parts; Sodium alkyl sulfate: 3 parts;

[0040] The components are obtained according to the above proportions, mixed at 20-30° C., and then left to stand for aging to obtain the wet electronic chemical etching solution for silicon-based materials.

[0041] The detection method for etching the silicon substrate is as follows:

[0042] The silicon substrate is first polished for 20-30 minutes, then the polished silicon substrate is washed with pure water, and then dried with cold air. The dried silicon substrate is etched.

[0043] A silicon substrate with a thickness of 1 mm after drying was selected for etching, placed in an etching tank con...

Embodiment 2

[0047] The wet electronic chemical etching solution for silicon-based materials in this embodiment includes, in parts by weight: 30 parts of methanesulfonic acid; 10 parts of trifluoromethanesulfonic acid; 35 parts of nitric acid; and 5 parts of citric acid; Hydrochloric acid: 10 parts; Q75: 3 parts; Sodium alkyl sulfate: 3 parts; water balance to 100 parts in total.

[0048] The etching solution was prepared according to the method of Example 1, and the silicon substrate was tested.

[0049] The thickness of the obtained silicon substrate was 0.84 mm, no concave and convex points were found on the surface of the silicon substrate, the thickness uniformity of the silicon substrate was less than 1%, and the etching solution contained a small amount of white flocs.

Embodiment 3

[0051] The wet electronic chemical etching solution for silicon-based materials in this embodiment includes, in parts by weight: 40 parts of methanesulfonic acid; 15 parts of trifluoromethanesulfonic acid; 25 parts of nitric acid; and 10 parts of hydrochloric acid; Q75: 5 parts; sodium alkyl sulfate: 3 parts; water balance to 100 parts in total.

[0052] The etching solution was prepared according to the method of Example 1, and the silicon substrate was tested.

[0053] The thickness of the silicon substrate obtained by measurement was 0.81 mm. There were no pits and bumps on the surface of the silicon substrate. The thickness uniformity of the silicon substrate was less than 1%. The etching solution contained a small amount of white flocs.

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Abstract

The invention particularly relates to a wet electronic chemical silicon-based material etching solution. The solution comprises the following components in parts by weight: 25-45 parts of methanesulfonic acid; 10-30 parts of fluoride; 30-60 parts of a water-soluble acid; 0.5-9.5 parts of a complexing agent; 0.5-3.5 parts of a wetting agent; and the balance of water which makes the total parts of the components be 100 parts. The water-soluble acid comprises at least one of nitric acid, sulfuric acid, phosphoric acid, perchloric acid, sulfinic acid, formic acid, acetic acid, citric acid, isocitric acid and glycolic acid. The fluoride comprises at least one of trifluoromethanesulfonic acid, sodium fluoride, sodium hydrogen fluoride, ammonium fluoride, ammonium hydrogen fluoride, ammonium fluoborate, potassium fluoride, potassium hydrogen fluoride, aluminum fluoride, fluoboric acid, lithium fluoride, potassium fluoborate and calcium fluoride. The wet electron chemical silicon-based material etching solution can be used for safely, stably and efficiently etching a silicon substrate, can well solve the problem of insoluble byproducts generated in the etching process, has lower industrial safety risk in the production process, and lowers the cost required in a wastewater treatment procedure.

Description

technical field [0001] The invention relates to the field of etching solutions, in particular to a wet electronic chemical etching solution for silicon-based materials and a preparation method thereof. Background technique [0002] Silicon-based materials In the fields of semiconductor wafers, solar panels, IC integrated circuit boards, flat-panel displays, and plasma displays, silicon-based materials need to be etched in the preparation of liquid crystal display devices, plasma display devices, and the like. [0003] At present, the etching solutions used by chemically etching manufacturers basically use hydrofluoric acid as the main component, and then add other water-soluble acids as auxiliary. Because hydrofluoric acid is highly toxic and easy to volatilize, especially in the configuration, it needs to use higher temperature and concentration, which is not only dangerous in the production process, but also causes huge pollution to the environment. At the same time, by-pr...

Claims

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Application Information

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IPC IPC(8): C09K13/08
Inventor 乔国庆相鲜
Owner 国创深圳新材料有限公司
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