Wet electron chemical silicon-based material etching solution and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 国创深圳新材料有限公司
- Publication Date
- 2021-04-20
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
technical field
[0001] The invention relates to the field of etching solutions, in particular to a wet electronic chemical etching solution for silicon-based materials and a preparation method thereof. Background technique
[0002] Silicon-based materials In the fields of semiconductor wafers, solar panels, IC integrated circuit boards, flat-panel displays, and plasma displays, silicon-based materials need to be etched in the preparation of liquid crystal display devices, plasma display devices, and the like.
[0003] At present, the etching solutions used by chemically etching manufacturers basically use hydrofluoric acid as the main component, and then add other water-soluble acids as auxiliary. Because hydrofluoric acid is highly toxic and easy to volatilize, especially in the configuration, it needs to use higher temperature and concentration, which is not only dangerous in the production process, but also causes huge pollution to the environment. At the same time, by-pr...