Fluorine-free etching agent and etching method thereof

An etchant and etching additive technology, applied in the field of etchant, can solve the problems of poor stability of etchant, unfavorable waste water recovery, etc., and achieve the effect of easy waste water recovery and solution to the phenomenon of metal molybdenum residue

Pending Publication Date: 2021-07-30
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The embodiment of the present application provides a fluorine-free etchant and its etching method to solve the technical problems that the current etchant has poor stability and is not conducive to wastewater recovery

Method used

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  • Fluorine-free etching agent and etching method thereof
  • Fluorine-free etching agent and etching method thereof
  • Fluorine-free etching agent and etching method thereof

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Embodiment Construction

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0027] Such as figure 1 as shown, figure 1 It is a structural schematic diagram of an existing array substrate, the array substrate 10 includes a thin film transistor unit 2 disposed on the substrate 1; the thin film transistor unit 2 has a bottom gate structure, and the thin film transistor unit 2 includes a buffer layer 21, a gate layer 22, a gate insulating layer 23, a first active layer 24, a second active layer 25, and a source-drain metal layer 26; the buffer layer 21 is disposed on the ...

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Abstract

The embodiment of the invention discloses a fluoride-free etching agent and an etching method thereof. The fluoride-free etching agent comprises the following components of, in percentage by weight, 1wt%-25wt% of hydrogen peroxide, 0.01wt%-3wt% of an etching stabilizer, 1wt%-20wt% of an etching inhibitor, 0.01wt%-4wt% of a pH adjusting agent, 1wt%-10wt% of an auxiliary oxidant, 0.01wt%-0.8wt% of an etching additive, and the balance deionized water. The fluorine-free etching agent is stable in etching, does not contain fluorine, does not damage a glass substrate, is easy in waste water recovery, and more importantly, solves the metal molybdenum residue phenomenon generated in the copper/molybdenum etching process, and can obtain a better patterned metal layer.

Description

technical field [0001] The present application relates to the technical field of etchant, in particular to a fluorine-free etchant and an etching method thereof. Background technique [0002] With the update and iteration of thin film transistor liquid crystal display (TFT-LCD) production technology, TV displays are developing in the direction of large-scale, high-quality, high-functionality (Ultra Definition, 3D, Smart.etc), and it is necessary to upgrade products The characteristics of the array substrate design (Gate / Data design) is very important. At present, many merchants still use the aluminum process to complete the gate (Mo / Al). With the higher the resolution, the larger the screen size, the number of scanning lines will increase, and the length of the scanning lines will also increase. The scanning lines will be input Signals are driven sequentially, so problems such as signal transmission delays will inevitably occur, which in turn will adversely affect the displ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C23F1/26
CPCC23F1/18C23F1/26
Inventor 郭前程
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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