26results about How to "Uniform etching" patented technology

The utility model discloses a gas spraying device, which comprises a gas input pipeline communicated with a gas source; the first gas cavity is communicated with one side, far away from the gas source, of the gas input pipeline; the first pore plate is arranged on one side, far away from the gas input pipeline, of the first gas cavity, and a plurality of first gas holes are formed in the first pore plate; the second gas cavity is formed in the side, away from the first gas cavity, of the first pore plate, blades are arranged in the second gas cavity, and the blades are hung on the side, away from the first gas cavity, of the first pore plate; the second pore plate is communicated with the side, close to the blades, of the second gas cavity, and a plurality of second gas holes are formed in the second pore plate. According to the gas spraying device provided by the utility model, the gas can be uniformly sprayed on the surface of the wafer, so that a film deposited on the surface of the wafer is uniformly distributed or uniformly etched.

The invention provides a reaction chamber and vapor deposition equipment, the reaction chamber comprises a wafer transfer port, a profiling gate valve assembly and a driving assembly, the wafer transfer port is arranged on the side wall of the reaction chamber and is communicated with the reaction chamber; the profiling gate valve assembly is arranged below the wafer conveying opening, the driving assembly is used for driving the profiling gate valve assembly to ascend so as to seal the wafer conveying opening, and the shape of the profiling gate valve assembly is matched with that of the wafer conveying opening. The profiling gate valve assembly is arranged below the wafer conveying opening, the shape of the profiling gate valve assembly is matched with that of the wafer conveying opening, the profiling gate valve assembly is driven by the driving assembly to ascend to conduct profiling sealing on the wafer conveying opening, the size of the reaction cavity is reduced, the plasma flux is larger, and the deposition / sputtering rate is increased; and meanwhile, the inner wall of the chamber is kept in a regular shape by closing the wafer conveying opening, and the plasma is limited in the central area during the process, so that the shape of the plasma can be effectively prevented from inclining during the process, and the deposition or sputtering / etching in the chamber is more uniform.

This disclosure includes the following steps: (a) forming an oxide SiGe film on the first side and an oxide Si film on the second side by oxidizing a first side of the SiGe layer and a second side of the Si layer respectively using a gas containing free radicalized oxygen; and (b) selectively etching the oxide SiGe film using hydrogen fluoride or a mixture of hydrogen fluoride and an inactive gas while maintaining the temperature of the semiconductor substrate above TL (°C) and below TH (°C). When the atomic ratio of Ge to Si in the SiGe layer is set to C (%) and the pressure or partial pressure of hydrogen fluoride in step (b) is set to P (Pa), C (%) < 25%, 50Pa ≤ P (Pa) ≤ 1000Pa, TL = 11.3 × LN (P) + 0.23 × C - 97.4, TH = 13 × LN (P) + C - 102.

The invention discloses an aluminum etching solution with low surface tension. The aluminum etching solution comprises phosphoric acid, nitric acid, acetic acid, deionized water and a functional additive, the functional additive is prepared by carrying out a copolymerization reaction on alkylene phosphonic acid, polyol diene ether and an olefin-containing biquinoline derivative, and then reacting part of phosphonic acid groups with part of sodium hydroxide or potassium hydroxide. The low-surface-tension aluminum etching liquid disclosed by the invention has relatively low surface tension and can better wet the aluminum surface, so that the etching process is accelerated, the etching uniformity and precision are improved, the lateral etching phenomenon is reduced, and the etched pattern edge is clearer and the line is finer. The invention further discloses a preparation method and application of the low-surface tension aluminum etching liquid, and the method is simple and easy to implement and low in cost and has wide industrial application prospects. According to the etching solution and the preparation method thereof, the production quality and efficiency of the printed circuit board can be remarkably improved, and the requirement of the electronic manufacturing industry for a high-precision etching process is met.

The application relates to the technical field of textiles, and particularly discloses a cooling process for polyester wool-simulating treatment, which comprises the following specific steps: adding a surface active agent and an inhibitor into water, mixing, uniformly stirring, and then forming an aqueous phase mixture; mixing n-alkanes and isopropyl alcohol to form an oil phase mixture; after the aqueous phase mixture is cooled, high-speed emulsification is carried out; the oil phase is slowly added into the emulsified aqueous phase mixture, and continuous emulsification is carried out to obtain an aerosol stock solution; the aerosol stock solution is mixed and diluted with deionized water to obtain a working solution; the working solution is atomized around a flat FDY (Fully Drawn Yarn) beam to form an aerosol curtain, and the cooling treatment is completed; the aerosol curtain is in a closed cylindrical shape; the temperature of the outer layer of the aerosol curtain is maintained at 55-65 DEG C; and the temperature of the inner layer of the aerosol curtain in contact with the flat FDY beam is 32-40 DEG C; through cooperation of various steps, the phase change characteristics of the main phase change medium n-alkanes are utilized to realize different vaporization speeds on the convex surface and the concave surface of the fiber, and the cooling rates of all parts of the flat section are compensated.

The invention discloses an etching method and an etching device for a monolithic cleaning machine, and belongs to the technical field of microelectronic packaging, the etching method comprises the following steps: spraying a liquid medicine to the surface of a wafer at a first rotating speed, and diffusing the liquid medicine to the periphery under the action of centrifugal force; reducing the rotating speed of the wafer to a second rotating speed, diffusing the liquid medicine to all etching areas on the surface of the wafer in a self-flowing state, and forming a medicine film with uniform thickness; secondly, carrying out an etching reaction on the chemical film and the etching area of the wafer until the etching is completed; and finally, under the action of centrifugal force generated by the wafer, the liquid medicine is separated from the wafer. According to the principle of the etching method, by accurately controlling the rotating speed of the wafer and optimizing the distribution and reaction process of the liquid medicine on the surface of the wafer, the problem of uneven etching caused by blocking of a graphical pattern in a traditional spraying process is effectively solved, the etching precision and the overall quality are improved, and meanwhile the stability and controllability of the process are ensured.

The present invention provides a device capable of uniformly etching the entire surface of a silicon core wire. The etching device (1) for etching silicon core wires (C1, C2, C3) comprises: etching liquid tanks (11, 12), the etching liquid tanks (11, 12) contain etching liquids (L1, L2); a plurality of core wire support members (31), the core wire support members (31) are formed with holes (31A) through which the silicon core wires (C1, C2, C3) pass, and support the silicon core wires (C1, C2, C3); and a position changing mechanism (40), the position changing mechanism (40) changes the relative position through which the silicon core wires (C1, C2, C3) pass relative to the holes (31A).

The present application discloses a method for realizing a recessed gate enhanced HEMT device by wet etching, which comprises: providing an epitaxial wafer for manufacturing a recessed gate enhanced HEMT device; setting a patterned etching mask on the epitaxial wafer, and exposing a selected area of ​​the surface of the epitaxial wafer from the etching mask; contacting the selected area of ​​the surface of the epitaxial wafer with a persulfate solution, and irradiating the selected area of ​​the surface of the epitaxial wafer with ultraviolet light, thereby etching a recessed structure in the barrier layer of the epitaxial wafer, and the recessed structure is used to cooperate with the gate. The present application avoids the problem of damage introduced by the dry etching process by performing low-damage wet etching on the area under the gate of the HEMT device. The process is simple and efficient, the etching is uniform, the repeatability is good, and there is no need to add a process for removing the etching product. The recessed gate threshold voltage of the obtained device is stable and the gate reliability is strong.

The present invention discloses a silicon electrode pore etching device, including a jig assembly with an acid liquid circulation structure, a clamping device is arranged inside the jig assembly, a multi-layer diverter plate is clamped inside the clamping device, a silicon electrode pressing groove is arranged on the clamping device above the multi-layer diverter plate; a plurality of liquid holes connected to the acid liquid circulation structure are arranged on the diverter plate, and the liquid holes on two adjacent diverter plates are staggered. Also disclosed is a method for etching silicon electrode pores using a silicon electrode pore etching device. The silicon electrode pore etching device solves the problem of incomplete and uneven pore etching during silicon electrode etching; the acid enters from the bottom and circulates inside, and the arrangement of the acid tank and the diverter plate can not only reduce the pressure of the acid, but also effectively block impurities, and adjust the flow rate of the acid by staggering the diverter plate up and down to make the whole more uniform; the device adopts a plastic material with good corrosion resistance to effectively avoid the substitution and doping of impurity ions.

The application discloses a deep-groove polysilicon etching solution, which comprises an oxidizing agent, an inorganic acid, a pH regulator and a surfactant. The deep-groove polysilicon etching solution can efficiently etch polysilicon while ensuring the uniformity and smoothness of the etching surface, and can maximize the consistency of the etching of the upper and lower grooves and the smoothness of the surface. In the etching process, the inorganic acid ensures that the etching solution system is in an acidic environment, and the polysilicon is etched; the pH regulator avoids the large fluctuation of the pH of the etching solution, thereby ensuring the stability of the polysilicon etching process; and the surfactant reduces the surface tension of the etching solution, improves the wettability of the etching solution, ensures the consistency of the etching rate of the upper and lower grooves, and ensures the consistency of the groove aperture.

The application provides a wafer etching method for etching a wafer with a P-type heavily doped substrate, the wafer etching method comprising: supplying an etching liquid with a preset temperature to the back surface of the wafer to etch the back surface of the wafer while the wafer is rotating, wherein the preset temperature is higher than normal temperature; stopping supplying the etching liquid to the wafer after a continuous duration, and then flushing the back surface of the wafer after the etching liquid stays on the back surface of the wafer for a preset duration. The wafer etching method provided by the application can realize uniform etching of the P-type heavily doped substrate wafer, thereby obtaining a thinned wafer product with the best appearance.

The utility model discloses a circuit board etching device, relates to the circuit board processing technology field, the circuit board etching device comprises a first etching mechanism, a second etching mechanism and a reversing mechanism, the first etching mechanism and the second etching mechanism respectively comprise a first conveying assembly and an etching spraying assembly, the first conveying assembly is used for conveying a circuit board, and the etching spraying assembly is used for spraying liquid to the circuit board on the first conveying assembly; the reversing mechanism comprises a second conveying assembly, a detection assembly and a reversing assembly; the second conveying assembly is arranged between the first etching mechanism and the second etching mechanism; the detection assembly is electrically connected with the reversing assembly, the reversing assembly is used for driving the circuit board on the second conveying assembly to rotate and reverse, and the second conveying assembly is used for conveying the circuit board after rotating and reversing to the second etching mechanism; according to the technical scheme provided by the utility model, the circuit board can achieve the effect of uniform etching during etching processing.

A metal foil strip winding type vacuum coating continuous production line includes a coating chamber, which is divided into two sections, front and rear sections, and windows are opened on one side of each chamber of the front and rear sections, and a track perpendicular to the frame is provided on one side of the frame corresponding to each window; a planar rectangular cathode arc source device is arranged in the front section, including a target material and a mobile trolley, the target material is fixed on the vertical panel of the mobile trolley and is located in a supporting drawer box; the mobile trolley travels on a vertical track, and a sealed door bracket composed of a frame and a vertical panel is arranged on it, the surface of the vertical panel facing the window direction is a sealing surface and is sealed with the window frame of the window, and a groove-shaped supporting drawer extending toward the window is fixed on the vertical panel; a rotating cylindrical medium-frequency magnetron sputtering target device is arranged in the rear section, including a sputtering target and a mobile trolley assembly, the sputtering target is fixed on the vertical panel and is located in the supporting drawer box; the target material and the sputtering target are pushed into or pulled out of each chamber respectively by the mobile trolley. The coating color of the coating of the present invention is uniform and stable, and the process is reliable.

The invention relates to a high-selection-ratio etching solution for titanium nitride and tungsten and an etching method. In the invention, the titanium nitride and tungsten high-selectivity etching solution is composed of sulfuric acid and high-selectivity hydrogen peroxide, and the high-selectivity hydrogen peroxide comprises hydrogen peroxide, a hydrogen peroxide stabilizer, an etching protective agent and a surfactant. In the process of etching tungsten and titanium nitride by the etching solution, a stable etching rate and a large selection ratio can be maintained. According to the method, the etching liquid is self-heated in a mode of controlling mixed heat release of sulfuric acid and hydrogen peroxide, so that the temperature of the etching liquid is increased to 100 DEG C or above in a short time, the heating energy consumption is reduced, the etching rate of the titanium nitride and tungsten film layer is increased, the etching selection ratio and the etching morphology are adjusted through the inhibitor and the surfactant, the high etching selection ratio is kept, and the etching efficiency is improved. A big problem in the semiconductor manufacturing process is solved.

The invention discloses a multi-target deposition control method and system, a medium and equipment. The multi-target deposition control method comprises the following steps: acquiring angle parameters between a substrate and a plurality of targets; environmental parameters in the cavity are adjusted to meet preset standards; based on the angle parameters and a preset control strategy, electric fields are applied to the multiple target positions respectively, a uniform composite electric field is formed through superposition, and the substrate is located in the composite electric field; the target position is deposited on the substrate through the electric field to form a film material, and control parameters of the electric field are adjusted based on thickness parameters of the film material until deposition is completed; a plurality of non-parallel target positions are arranged on the outer side of a substrate, an electric field is applied to each target position, a composite electric field with uniform strength is formed at the position of the substrate, and plasma density distribution is uniform, so that the sputtering rate and direction of a target material on the target positions tend to be consistent on the surface of the whole substrate, and the uniformity of film material thickness preparation is ensured; and the electric field is uniformly distributed, so that the target material is uniformly etched, and the utilization rate can be increased from 40-50% to 60-70%.

The present disclosure provides a kind of improved process stability light-emitting diode and its preparation method, belong to the field of optoelectronic manufacturing technology.The preparation method includes: growing epitaxial layer on substrate;Transparent conductive layer and barrier layer are formed in turn on the surface of the epitaxial layer away from the substrate;Mask is formed on the surface of the barrier layer, and the barrier layer is etched through the mask to form the etching window exposing the transparent conductive layer;The transparent conductive layer is wet etched through the etching window to form the patterned transparent conductive layer.The embodiment of the present disclosure can reduce the difficulty of preparing transparent conductive layer on micro light-emitting diode, improve process stability.

An exemplary semiconductor processing method may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. The method may include forming a plasma of an oxygen-containing precursor to produce an oxygen-containing plasma effluent. A method may include contacting a substrate contained in a processing region with an oxygen-containing plasma effluent. The substrate may include a boron and nitrogen containing material overlying the carbon containing material. The boron and nitrogen containing material includes a plurality of openings. The method may include etching a carbon-containing material.

This utility model relates to the field of solar cell technology, specifically disclosing an etching apparatus. The apparatus includes: an etching unit comprising a substrate, wherein a liquid flow channel is provided on the substrate, the liquid flow channel having a supply port for providing etching solution and a drain port for discharging etching solution; and a liquid flow generating device configured to generate a liquid flow of etching solution, the liquid flow direction being from at least one of the supply ports into the liquid flow channel and from at least one of the drain ports out of the liquid flow channel. Compared with the prior art, the contact interface between the etching solution and the silicon wafer of this utility model is more uniform and stable, which can effectively improve etching uniformity, reduce over-etching rate, improve etching effect, and thus improve the performance and quality of the processed silicon wafer. At the same time, the overall structure of this utility model is simpler, the production precision requirements of the apparatus are lower, effectively reducing equipment costs and manufacturing difficulty, and facilitating industrial production.

The invention relates to a titanium-tungsten alloy etching solution and a preparation method thereof. The etching solution is prepared from 10-16% of H2O2, 5-10% of phosphoric acid, 0.1-1% of organic acid, 2-4% of alkali, 1-5% of inhibitor and the balance of deionized water. Wherein the inhibitor can inhibit corrosion of the etching liquid to the Ti film layer and protect the Ti film layer from being corroded or slightly corroded. The preparation method comprises the step of sequentially adding the deionized water, the phosphoric acid, the organic acid, the alkali, the inhibitor and the H2O2 into a mixing kettle. According to the method, the TiW layer can be etched slowly and uniformly, the morphology after etching is accurately controlled, and meanwhile, the Ti layer can be effectively protected from being corroded or slightly corroded.

The utility model discloses an etching device for processing a semiconductor lead frame, and relates to the technical field of semiconductor manufacturing, a plurality of positioning plates are respectively and fixedly arranged on a belt of a belt conveyor, and four sides of the plurality of positioning plates are respectively provided with grooves; the abutting rods are fixedly arranged at the four corners of the positioning plate respectively. The multiple movable plates are arranged on the four sides of the positioning plate through connecting assemblies respectively, the movable plates are movably clamped in the grooves, and the two sides of each movable plate abut against the corresponding abutting rods in a matched mode; the fixing frames are fixedly arranged on a support of the belt conveyor, vertical rods on the front side and the rear side of each fixing frame are located on the front side and the rear side of the belt conveyor, and spray heads are arranged on transverse rods of the fixing frames and connected with an external water source. The etching liquid can be conveniently stored on the positioning plate through the abutting rod and the movable plate, so that the lead frame is soaked in the etching liquid, the lead frame is uniformly etched, and the etching efficiency is improved.

The application provides an etching device and etching system for manufacturing a metal mask plate. The etching device comprises a liquid storage tank, the liquid storage tank is provided with an inlet and an outlet for a belt to pass through at a design speed, the belt separates the liquid storage tank into a first liquid storage area and a second liquid storage area, the lower liquid level of the first liquid storage area and the upper liquid level of the second liquid storage area are in contact with the two sides of the belt respectively, a first liquid inlet pipeline and a second liquid inlet pipeline are in communication with the first liquid storage area and the second liquid storage area respectively, a first liquid outlet pipeline and a second liquid outlet pipeline are in communication with the first liquid storage area and the second liquid storage area respectively, and a first adjusting valve and a second adjusting valve are used for adjusting the flow rate of the first liquid inlet pipeline into the first liquid storage area and the flow rate of the second liquid inlet pipeline into the second liquid storage area respectively, so that the flow rates of the etching liquid in the first liquid storage area and the second liquid storage area are matched with the design speed of the belt. The application can keep the etching rates of the two sides of the belt consistent, thereby ensuring uniform etching of the two sides of the belt.

The invention relates to a microporous copper foil etching method which comprises the following steps: (1) pretreating the surface of a copper foil base material; (2) preparing an etching solution; (3) performing electrochemical etching; and (4) performing post-treatment. The main etching agent provides etching driving force, the pore structure regulator regulates and controls the selectivity of etching sites through adsorption, the conductive medium improves the conductivity of the etching liquid, and chloride ions cooperatively control the growth direction and pore diameter uniformity of pores. The pore diameter of the prepared microporous copper foil is uniformly distributed in a range of 0.1-200 [mu] m, the porosity can be flexibly regulated and controlled in a range of 0.05-40%, and the requirements of different battery systems on pore structures are met.

The utility model discloses a dynamic spraying etching device, include: spray tank, set up in the spray tank's entrance and exit section, cleaning section, wind cut section, etching section in proper order, separate through the partition between adjacent sections, etching section includes: the rotatory bearing disc of rotation setting, set up a plurality of horizontal rotatory roller on the rotatory bearing disc, set up the spray assembly above, below the rotatory bearing disc, copper foil is transported to the rotatory bearing disc by the rotatory roller, and the spray assembly synchronously occurs horizontal rotation in the process of etching copper foil from top to bottom by spraying, copper foil horizontal place in the entrance and exit section, pass through cleaning section, wind cut section in proper order, reach etching section, and the rotatory bearing disc occurs rotation simultaneously in the process of etching copper foil by spraying, drive copper foil to rotate, realize the even etching of copper foil.

The invention discloses an atomic-scale ultra-smooth lossless machining method and system for a diamond blank, and belongs to the technical field of precision machining of superhard materials. The machining method comprises the steps that the surface of a metal catalyst and the surface of a to-be-polished diamond make contact and are fixed, the metal catalyst and the surface of the to-be-polished diamond are placed in a vacuum cavity and heated, reaction gas is introduced into the vacuum cavity, and plasma is generated through excitation; under the synergistic effect of catalytic agent catalysis and plasma activation, the diamond surface layer is removed; the roughly polished diamond is placed on a polishing disc, pressure is applied, the polishing disc is rotated, and meanwhile the polishing liquid is used for mechanical polishing; and the mechanically polished diamond is placed in a vacuum cavity, oxygen-containing reaction gas is introduced into the vacuum cavity, radio frequency power is applied to excite capacitive coupling plasma, atomic-scale etching is conducted on the surface of the diamond, and the atomic-scale ultra-smooth surface is obtained. According to the method, the whole-process dry processing from rapid removal to atomic-scale smoothing is realized.

This utility model provides an etching support device and etching equipment, relating to the field of etching technology. The etching support device includes a heating base and an electrostatic suction cup. The heating base has a receiving groove at its center. The electrostatic suction cup is disposed in the receiving groove, with its top protruding from the heating base and having an adsorption surface for adsorbing the wafer. The heating base surrounds the periphery of the electrostatic suction cup and is configured to heat the periphery of the electrostatic suction cup and the wafer, thereby improving the plasma distribution during wafer etching. Compared to the prior art, the etching support device provided by this utility model can effectively improve etching uniformity and alleviate the problem of over-etching at the wafer edges.

The utility model relates to the technical field of optical modules, and particularly discloses an optical module board which comprises a shell and a cover plate, the cover plate is arranged above the shell in a threaded mode, a circuit board placing area and laser placing areas are arranged in the shell respectively, first clamping grooves are formed in the two laser placing areas respectively, second clamping grooves are formed in the circuit board placing area, and the first clamping grooves are communicated with the second clamping grooves. A stabilizing mechanism is arranged in the circuit board placing area and comprises a circuit board body, golden fingers are fixedly installed on the side wall of the circuit board body, the golden fingers are equal in width, a laser body is placed in the laser placing area, and the golden fingers on the side wall of the circuit board body are equal in width. According to the method, the golden finger can be kept at the same etching rate in the etching process, and the surface of the whole golden finger is ensured to be uniformly etched, so that the problems of non-uniform etching amount and inconsistent shape are avoided, the flatness of a copper surface of a golden finger circuit is further improved, and the transmission stability and performance are improved.