Plasma processing apparatus and method

Abstract

There is provided a plasma etching device for generating plasma as a processing gas between an upper electrode (34) and a lower electrode (16) and subjecting a wafer (W) to plasma etching. The upper electrode (34) includes a variable DC power source (50) for applying DC voltage so that the absolute value of the self bias voltage Vdc on the surface of the upper electrode (34) becomes large enough to obtain an appropriate sputter effect to the surface and the thickness of the plasma sheath on the upper electrode (34) becomes thick enough to form a desired miniaturization plasma.

Description

technical field [0001] The present invention relates to a plasma processing device, a plasma processing method, and a computer-readable storage medium for performing plasma processing on substrates to be processed such as semiconductor substrates. Background technique [0002] For example, in the manufacturing process of a semiconductor device, in order to form a predetermined pattern on a predetermined layer formed on a semiconductor wafer as a substrate to be processed, a plasma etching process using a resist as a mask and etching with plasma is often used. [0003] As a plasma etching apparatus for performing such plasma etching, various apparatuses are used, and a capacitive coupling type parallel plate plasma processing apparatus is mainly used. [0004] In the capacitively coupled parallel plate plasma etching device, a pair of parallel plate electrodes (upper and lower electrodes) are arranged in the chamber, the processing gas is introduced into the chamber, and a hi...

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Problems solved by technology

However, plasma etching using the fluorocarbon-based processing gas described in Patent Document 2 and Patent Document 3 cannot sufficiently ensure the etching selectivity ratio between the Low-k film and the SiC layer.

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