Plasma processing apparatus and method

A plasma and processing device technology, which is applied in the field of plasma processing devices, can solve the problem that the etching selectivity ratio between Low-k film and SiC layer cannot be fully ensured, etc.

Active Publication Date: 2007-05-30
TOKYO ELECTRON LTD
View PDF3 Cites 29 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, plasma etching using the fluorocarbon-based processing gas described in Patent Document 2 and Patent

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma processing apparatus and method
  • Plasma processing apparatus and method
  • Plasma processing apparatus and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0212] First, the first embodiment will be described. FIG. 1 is a schematic cross-sectional view showing a plasma etching apparatus according to a first embodiment of the present invention.

[0213] This plasma etching apparatus is configured as a capacitively coupled parallel plate plasma etching apparatus, and has a substantially cylindrical chamber (processing container) 10 made of, for example, aluminum whose surface is anodized. The chamber 10 is safety grounded.

[0214] At the bottom of the chamber 10 , a cylindrical susceptor support 14 is arranged via an insulating plate 12 made of ceramics or the like, and a susceptor 16 made of, for example, aluminum is provided on the susceptor support 14 . The susceptor 16 constitutes a lower electrode, and a semiconductor wafer W serving as a substrate to be processed is placed thereon.

[0215] An electrostatic chuck 18 that attracts and holds the semiconductor wafer W by electrostatic force is provided on the upper surface of...

Embodiment approach 2

[0362] Next, a second embodiment of the present invention will be described.

[0363] 34 is a schematic cross-sectional view showing a plasma etching apparatus according to a second embodiment of the present invention. In FIG. 34, the same components as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.

[0364]In this embodiment, instead of the upper electrode 34 of the first embodiment, an upper electrode 34' having the following structure is provided. The upper electrode 34' is composed of a ring-shaped outer upper electrode 34a disposed opposite to the susceptor 16 at a predetermined interval, and a disk-shaped inner upper electrode 34b disposed radially inward of the outer upper electrode 34a in an insulated state. constitute. These are involved in the generation of plasma, and have a relationship in which the outer upper electrode 34 a is the main one and the inner upper electrode 34 b is the auxiliary one.

[0365] As...

no. 3 approach

[0408] In the third embodiment, components common to those in the first and second embodiments are denoted by the same symbols.

[0409] 40 is a schematic cross-sectional view showing a plasma etching apparatus according to a third embodiment of the present invention.

[0410] That is, it applies high-frequency (RF) power of, for example, 40 MHz for plasma generation from the first high-frequency power supply 88 to the susceptor 16 as the lower electrode, and supplies the susceptor 16 as the lower electrode from the second high-frequency power supply 90 . 16. A lower RF dual-frequency application type plasma etching apparatus for applying high-frequency (RF) power of, for example, 2 MHz for ion introduction. As shown in the figure, a variable DC power supply 50 is connected to the upper electrode 34 to apply Plasma etching apparatus with specified direct current (DC) voltage. This plasma etching apparatus will be described in detail using FIG. 41 .

[0411] This plasma etchi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

There is provided a plasma etching device for generating plasma as a processing gas between an upper electrode (34) and a lower electrode (16) and subjecting a wafer (W) to plasma etching. The upper electrode (34) includes a variable DC power source (50) for applying DC voltage so that the absolute value of the self bias voltage Vdc on the surface of the upper electrode (34) becomes large enough to obtain an appropriate sputter effect to the surface and the thickness of the plasma sheath on the upper electrode (34) becomes thick enough to form a desired miniaturization plasma.

Description

technical field [0001] The present invention relates to a plasma processing device, a plasma processing method, and a computer-readable storage medium for performing plasma processing on substrates to be processed such as semiconductor substrates. Background technique [0002] For example, in the manufacturing process of a semiconductor device, in order to form a predetermined pattern on a predetermined layer formed on a semiconductor wafer as a substrate to be processed, a plasma etching process using a resist as a mask and etching with plasma is often used. [0003] As a plasma etching apparatus for performing such plasma etching, various apparatuses are used, and a capacitive coupling type parallel plate plasma processing apparatus is mainly used. [0004] In the capacitively coupled parallel plate plasma etching device, a pair of parallel plate electrodes (upper and lower electrodes) are arranged in the chamber, the processing gas is introduced into the chamber, and a hi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/3065
Inventor 舆石公杉本胜日向邦彦小林典之舆水地盐大谷龙二吉备和雄齐藤昌司松本直树大矢欣伸岩田学矢野大介山泽阳平花冈秀敏速水利泰山崎广树佐藤学
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap