116results about How to "Avoid sublimation" patented technology

The silicon etching apparatus using XeF2 includes: a basic structure composed of a loading chamber tot loading XeF2, an expansion chamber for collecting sublimated XeF2 gas, and an etching chamber for performing an etching process; and a means for injecting nitrogen prior to the etching process to eliminate air moisture in the apparatus and thus preventing the formation of HF. The silicon etching apparatus using XeF2 further includes: an injector having a predefined shape provided in the etching chamber for uniformly injecting the XeF2 gas downward on to surface of a wafer; a feedback controller for feedback controlling the internal pressure of the loading chamber in order to prevent sublimation of the residual XeF2 in the loading chamber; and a weight scale for measuring the weight of XeF2 in the loading chamber.

An object of the present invention is to provide an extreme ultraviolet light source target which can emits extreme ultraviolet light with high emission efficiency. A solid target made of heavy metal or heavy-metal compound and having a density 0.5 to 80% that of the crystal density is used. When the target is irradiated with a laser beam, plasma of the heavy metal contained in the target is generated, and extreme ultraviolet light having a predetermined wavelength which corresponds to the kind of the heavy metal is emitted from the plasma. When the density of the target is made to be smaller than the crystal density as described above, space distribution of the density of the generated plasma can be controlled, and the region in which plasma absorbs energy of the laser beam overlaps the region in which the plasma emits the extreme ultraviolet light. Thus, emission efficiency can be improved, preventing energy loss. For example, in a case where the SnO₂ target having a density 24% of the crystal density is used, the emission efficiency at around 13.5 nm wavelength is higher than in the case where a Sn crystal target is used.

In order to solve the problems in the prior art, the invention provides a seed crystal processing method for silicon carbide single crystal growth. The back of a seed crystal is enabled to obtain two compact graphite layers by means of a one-step method, and the graphite layers can be maintained to be stable at high temperature, so that the sublimation of the back of the seed crystal is inhibited; therefore, a plane hexagonal hole defect caused by the sublimation of the back of the seed crystal in a crystal growth process can be eliminated, and the quality of a silicon carbide crystal is greatly improved. The method is easy to implement, the cost is controllable, and the method has prominent large-scale application prospect.

The invention discloses an environmental-friendly mercuric chloride metal catalyst, which consists of an inhomogeneous mercuric chloride metal catalyst and a polymer coated on the surface of the inhomogeneous mercuric chloride metal catalyst in a film mode. In a reaction of producing vinyl chloride by acetylene hydrochlorination, due to the adoption of the catalyst, on the premise of ensuring the activity of the catalyst and the selectivity of vinyl chloride, the environment and health problems caused by Hg sublimation are reduced. The catalyst has the characteristics of high catalyzing efficiency, low toxicity, mild catalyst release and the like. The invention also discloses a preparation method of the environmental-friendly mercuric chloride metal catalyst. In the preparing process, few parameters need to be controlled. The preparation method has high repeatability and strong controllability and is easy for industrial production.

The invention provides a heatproof lyoprotectant for a live vaccine against pseudorabies. The heatproof lyoprotectant comprises, by weight, 3 to 10 parts of gelatin, 1 to 5 parts of trehalose, 5 to 15 parts of sucrose, 0.1 to 2 parts bovine serum albumin, 1 to 8 parts of tryptone, 2 to 10 parts of enzyme-hydrolyzed casein, 1 to 5 parts of thiourea, 0.8 to 2 parts of L-monosodium glutamate, 0.1 to 3 parts of arginine, 0.5 to 5 parts of polyvinylpyrrolidone (PVP-K30) and 0.1 to 2 parts of mannitol. The invention also discloses a preparation method of the heatproof lyoprotectant and a lyophilized vaccine prepared from the heatproof lyoprotectant. When the heatproof lyoprotectant is used for protecting the vaccine and a specific lyophilization process is employed, lyophilization loss of viruses can be effectively reduced, the temperature tolerance of the viruses can be improved, and the vaccine can still maintain good physical properties and titer after long-term storage; i.e., the vaccine has stable characters and has the characteristics of heat resistance and long storage time.

This invention provides a treatment method for waste liquid from adipic acid production with simple process, good effect and low cost. Said method comprises: (1) adding waste liquid from adipic acid production and the extraction agent of ethyl acetate with the same volume as the waste liquid in an extraction equipment, vibrating and extracting, and standing to stratify the water and organic item, and flowing out the water and the remained extract containing three acids (adipic acid, glutaric acid and succinic acid), (2) repeating above steps to extract, (3) distilling the three acids-bearing extract no longer to be treated, evaporating the extraction agent of ethyl acetate, recycling, cooling the remainder and molding to obtain the three acids, and (3) adding alkaline substance to the water no longer to be treated, adjusting its pH within a range of 7-8, and discharging or taking it as liquid fertilizer. The approach is an advanced and mature technology with low energy consumption and no pollution. The three acid obtained have good quality and high efficiency.

Utilization of process and equipment for oxidation of metal sulfides, preferably two step metal sulfide oxidation reactions, and more preferably with looping back of second step oxide to the first step as an oxidizing agent, to generate sulfur dioxide and a useful metal or metal oxide, and react the sulfur dioxide with halogen (iodine or bromine) and water to produce sulfuric and halogen acid under moderate process conditions and equipment requirements and then dissociating the halogen acids (HI or HBr) to halogen and hydrogen as an overall environmentally and cost efficient and otherwise acceptable safe process for producing hydrogen and other useful products.

The invention discloses a silicon carbide activation annealing method. The method comprises the following steps: forming a first protection layer on the surface, subjected to ion implantation, of oneside of a silicon carbide wafer; forming a second protective layer on the surface of one side, at which the first protective layer is formed, of the silicon carbide wafer; carrying out annealing treatment of the silicon carbide wafer with the second protection layer, wherein the thermal stability of the second protection layer is superior to that of the first protection layer during annealing treatment. A first protection layer and a second protection layer are formed on the surface of silicon carbide. During the annealing treatment of the silicon carbide wafer, the second protection layer canprevent the first protection layer from melting at a high temperature and prevents the sublimation of silicon atoms, and the first protection layer can effectively prevent silicon atoms on the surface of the silicon carbide wafer from sublimating and depositing again, so the problems of sublimation and deposition of silicon atoms on the surface of silicon carbide in the annealing process can be solved through the two protection layers, and the reliability of activating annealing protection of silicon carbide is improved.

The invention relates to a middle-high temperature thermoelectric module. The middle-high temperature thermoelectric module comprises at least one group of thermoelectric pair, wherein the thermoelectric pair comprises two thermoelectric blocks connected through an insulating supporting plate; an electrode formed on a high temperature end surface of the thermoelectric pair; a diffusion blocking protection layer formed at least on the surface of the thermoelectric pair and/or the surfaces of the two thermoelectric blocks; an anti-oxidation layer formed at least on the surface of the thermoelectric pair and/or the surfaces of the two thermoelectric blocks; and an aerogel thermal insulation layer filling a gap of the at least one group of thermoelectric pair. The thermoelectric module provided by the invention simultaneously has the performance of sublimation prevention, anti-oxidation, heat insulation and the like, and the thermoelectric performance and the efficiency of the thermoelectric module are improved; in addition, the thermoelectric module has a self-protection function when working under conditions relating to corrosive gas, moist, chemical medium corrosion, temperature cold-hot alternation and the like.

The invention belongs to the field of tires, and particularly relates to a steel wire adhesive material for a tire and a preparation method of the adhesive material. The steel wire adhesive material comprises the following raw materials in parts by weight: a first adhesive system comprising 1.0-2.5 parts of adhesion promoter, 4.0-6.0 parts of adhesive, 10 parts of white carbon black and 2.0-4.0 parts of adhesive antioxidant; a second adhesive system comprising 0.6-1.5 parts of cobalt salt, 100 parts of natural rubber, 35-55 parts of carbon black, 6-10 parts of zinc oxide, 1.0-2.5 parts of anti-aging agent, 4.0-6.0 parts of sulphur, 0.8-1.5 accelerant and 0-0.3 part of scorch retarder. Resorcinol is replaced with the adhesion promoter, and meanwhile, the adhesive antioxidant is added, so that the smoking phenomenon in production is removed, the adhesive effect of a sizing material and the steel wire is improved, and meanwhile, the environmental pollution and the damage to physical health of a worker are relieved.

The invention discloses a silicon carbide ion activation annealing device and a silicon carbide ion activation annealing method; the silicon carbide ion activation annealing device comprises a high-temperature furnace and a graphite crucible; the wall of the high-temperature furnace is provided with an air inlet and an air outlet; the graphite crucible is arranged in a hearth of the high-temperature furnace; the graphite crucible is provided with an outer shell, an inner shell and a crucible cover; the inner part of the inner shell forms an inner hearth; and an outer hearth is formed between the outer shell and the inner shell; after the crucible cover is covered, the outer shell and the crucible cover are closed in a sealing way, and a gap exists between the top end of the inner shell andthe crucible cover; the silicon carbide ion activation annealing method comprises the following steps: a protective layer is coated on the silicon carbide to be annealed, and then the silicon carbideis placed in the inner hearth of the graphite crucible; high-purity silicon carbide powder is arranged in the outer hearth of the graphite crucible, inert gas is led in the inner hearth of the high-temperature furnace, and then the high-temperature furnace is used for heating to the temperature of 1200 DEG C to 1800 DEG C for 0.52 hours; meanwhile, the silicon carbide surface is smooth and the finished product ratio is improved.

The invention discloses a method for preparing N,N'-bi(alkyl)-p-phenylenediamine. The method comprises the following steps: mixing a raw material A and a raw material B to react to obtain a reaction liquid, and performing dehydration treatment on the reaction liquid so as to obtain a Schiff base intermediate; and introducing hydrogen into the Schiff base intermediate, and performing reduction reaction under the catalysis action of a loaded nano composite metal catalyst, thus obtaining the N,N'-bi(alkyl)-p-phenylenediamine, wherein the raw material is p-phenylenediamine and/or paranitroaniline; and the raw material B is alkyl ketone. The method disclosed by the invention has the advantages of being gentle in reaction condition, high in selectivity, easy in reaction control, easy in product separation and high in yield, and industrial production is easily achieved.

The invention discloses waterborne acrylic acid modified alkyd resin and a preparation method. The waterborne acrylic acid modified alkyd resin is prepared from the following raw materials: 22 to 24 percent of dry or semi-dry plant oleic acid, 14 to 15 percent of tribasic alcohol with a side chain, 13 to 14 percent of phthalic anhydride, 0.05 to 0.15 percent of a color reduction agent, 1 to 3 percent of refluxing xylol, 0.7 to 1 percent of cis-butenedioic anhydride, 2.5 to 2.7 percent of trimellitic anhydride, 4 to 5 percent of methyl methacrylate, 6 to 8 percent of styrene, 1 to 2 percent ofbutyl acrylate, 0.5 to 1 percent of an initiator and 28 to 29 percent of propylene glycol methyl ether. The waterborne acrylic acid modified alkyd resin is obtained by combining the above preferable raw materials; the waterborne acrylic acid modified alkyd resin has good environment protection performance and low toxicity, also keeps excellent comprehensive performance including glossiness, adhesion and, rigidity and the like and has very good technical effects.

The invention relates to a levelling agent and a preparation method and an application thereof. A structural formula of the levelling agent is as shown in the following specification, wherein n is a number between 5 and 10. The levelling agent has the good film-forming property, and contains abundant ester groups, and is capable of combining with dye through a hydrogen bond, thereby uniformly carrying the dye to the surface of fabric and forming a film in uniform thickness, enabling the dye to be uniformly adhered to the fabric, and preventing the non-uniform dispersion because of the short contact time of the dye and the fabric. In addition, the film can also prevent migration and sublimation of the dye in a drying and color development process, and the chromatic aberration of a warp direction, a weft direction and positive and negative faces of the fabric is prevented. The levelling agent is suitable for continuous padding-type dyeing and coating-type dyeing. Compared with vat dyeingin high-temperature and high-pressure, the energy consumption can be reduced, the dyeing efficiency is improved, and the product quality is improved, the color fastness of the fabric and the color uniformity reach a A-grade level stated by a national standard, so the vat dyeing in high-temperature and high-pressure can be possibly replaced by the continuous dyeing in normal pressure and temperature.

The invention provides a preheating tin soldering machine. The machine comprises a base, wherein a welding gun and a tin wire spinning gun parallelly extend in front of the base; the tin wire spinning gun comprises a transfer arm; a transfer roller is arranged in the transfer arm and draws a tin wire to extend to a spinning pipe in front of the transfer arm; the spinning pipe consists of a metal body; a spinning curved channel is formed in the spinning pipe; an electric heating structure is arranged outside the spinning pipe; and the heating temperature of the electric heating structure is between 80 and 120 DEG C. The tin soldering machine can conveniently perform tin soldering operation, can slowly heat the tin wire to prevent the tin wires from being sublimated, and is favorable for improving a spinning smooth degree.

A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate as a seed crystal in a reactive chamber; introducing a raw material gas into the reactive chamber; growing a silicon carbide single crystal from the substrate; heating the gas at an upstream side from the substrate in a gas flow path; keeping a temperature of the substrate at a predetermined temperature lower than the gas so that the single crystal is grown from the substrate; heating a part of the gas, which is a non-reacted raw material gas and does not contribute to crystal growth, after passing through the substrate; and absorbing a non-reacted raw material gas component in the non-reacted raw material gas with an absorber.

The invention discloses a dust-raising monitoring device for building monitoring. The dust-raising monitoring device structurally comprises a device support seat, a rainwater-accumulation and dust-fall protection device, a dust-raising monitor, a device support plate, a camera, a digital display and a monitoring tank, wherein the top of the device support seat is vertical to the bottom of the rainwater-accumulation and dust-fall protection device and is welded to the bottom of the rainwater-accumulation and dust-fall protection device, the bottom of the rainwater-accumulation and dust-fall protection device is mounted below the dust-raising monitor, and the dust-raising monitor is connected with the device support seat through the support plate. According to the dust-raising monitoring device, rainwater can be guided and collected, a touch point is in a normally open state by virtue of the gravity, and a watering function can be started so as to realize dust fall when much dust is raised around, so that much raised dust can be avoided; and equipment can be mounted above the dust-raising monitor so as to shield rain, so that the situation that rainwater enters the dust-raising monitoring device to sublimate is avoided.

The present invention relates to a zinc sulphide phosphor and to a process for producing same. The invention further relates to a security document or document of value, to a security feature and to a method for detecting same. The phosphor according to the invention can act as electroluminescent phosphor and thus be excited by an electrical field, and this can result in emission of electroluminescent light in the blue and/or green colour region of the visible spectrum. The phosphor can moreover be excited by UV radiation in the wavelength range from 345 nm to 370 nm, and can thus emit photoluminescent light in the blue colour region of the visible spectrum. The phosphor can moreover be excited by UV radiation in the wavelength range from 310 nm to 335 nm, and can thus emit photoluminescent light in the green colour region of the visible spectrum.

The invention belongs to the technical field of polymer decoration and clothing and particularly relates to an anti-sublimation and water washing-resistant decorative film for textiles and a preparation method thereof. The anti-sublimation and water washing-resistant decorative film for textiles is composed of a matte PET release film and a coating layer on the matte surface of the matte PET release film. The coating layer comprises an anti-sublimation layer, an intermediate treated layer and a glue layer from inside to outside. The anti-sublimation and water washing-resistant decorative filmis soft, has good water washing resistance and dry washing resistance, effectively prevents the sublimation and migration of the textile fabric color, can adapt to various styles of textile and garment designs, and can adapt to textiles with color fastness of 1 to 5 level. The anti-sublimation and water washing-resistant decorative film is easy to operate in use and has a good application prospect.

The invention discloses a silicon shell tungsten core heater strip and a preparation method thereof, and belongs to the technical field of heating material preparation. High-purity silicon wraps the outer surface of a tungsten wire to form the heater strip. The preparation method includes the steps: winding the tungsten wire into a needed shape and placing the tungsten wire into a chemical vapor deposition reaction furnace; depositing the high-purity silicon on the surface of the tungsten wire through chemical vapor deposition reaction. The heater strip can be widely applied to various vacuum devices needing to be heated, and can stably and effectively provide heat sources for a system for along time.

The invention discloses an anti-freezing water pressure gauge for a corrugated pipe and belongs to the field of instruments. The anti-freezing water pressure gauge for the corrugated pipe comprises a gauge head and a connector, wherein the connector is sequentially wrapped in an overheating resisting layer, a heating layer and a heat insulating layer. The overheating resisting layer is filled with an anti-freezing solution. The heating layer is a cavity formed between the overheating resisting layer and the heat insulating layer. Two symmetrical through holes are formed in the heating layer and the heat insulating layer. A water inlet pipeline and a water outlet pipeline penetrate through the through holes respectively to enter the heating layer. By the adoption of the anti-freezing water pressure gauge, the problem that measurement is not accurate when a water pressure gauge is used outdoor in cold weather is solved.

A susceptor used for semiconductor epitaxial growth, by which a plurality of highly uniform epitaxially grown films can be obtained at the same time. The susceptor is used for semiconductor epitaxial growth, and is composed of a barrel-type susceptor, which has a plurality of planes whereupon a plurality of substrates can be freely placed on the external side, and a member, which has the barrel-type susceptor inside and has planes arranged to face each of the planes of the barrel-type susceptor by inclining in the same direction. Alternatively, the susceptor is composed of a barrel-type susceptor, which has a plurality of planes whereupon a plurality of substrates can be freely placed on the inner side, and a member, which has the barrel-type susceptor on the outer circumference part and has planes arranged to face each of the planes of the barrel-type susceptor by inclining in the same direction.