Silicon carbide ion activation annealing device and silicon carbide ion activation annealing method

Abstract

The invention discloses a silicon carbide ion activation annealing device and a silicon carbide ion activation annealing method; the silicon carbide ion activation annealing device comprises a high-temperature furnace and a graphite crucible; the wall of the high-temperature furnace is provided with an air inlet and an air outlet; the graphite crucible is arranged in a hearth of the high-temperature furnace; the graphite crucible is provided with an outer shell, an inner shell and a crucible cover; the inner part of the inner shell forms an inner hearth; and an outer hearth is formed between the outer shell and the inner shell; after the crucible cover is covered, the outer shell and the crucible cover are closed in a sealing way, and a gap exists between the top end of the inner shell andthe crucible cover; the silicon carbide ion activation annealing method comprises the following steps: a protective layer is coated on the silicon carbide to be annealed, and then the silicon carbideis placed in the inner hearth of the graphite crucible; high-purity silicon carbide powder is arranged in the outer hearth of the graphite crucible, inert gas is led in the inner hearth of the high-temperature furnace, and then the high-temperature furnace is used for heating to the temperature of 1200 DEG C to 1800 DEG C for 0.52 hours; meanwhile, the silicon carbide surface is smooth and the finished product ratio is improved.

Description

technical field [0001] The invention relates to an annealing device and an annealing method, in particular to a silicon carbide ion activated annealing device and a silicon carbide ion activated annealing method. Background technique [0002] As a new semiconductor material, silicon carbide (4H-SiC) is not only very suitable for high-end product applications, such as electric propulsion and power transmission, but also has energy-saving potential due to its excellent material properties. Since power electronic devices are widely used and the market is huge, the energy that silicon carbide devices can save is huge. [0003] In the past ten years, the research on silicon carbide power electronic devices has progressed rapidly. Silicon carbide MOSFET, BJT, JFET and IGBT and other power electronic device structures have been developed, which has greatly promoted the development of silicon carbide materials and device technology. In order to fabricate these devices, selective d...

AI Technical Summary

Problems solved by technology

However, a temperature higher than 1400°C will cause the surface of silicon carbide to degrade, causing device surface leakage and reducing device yield.

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