Seed crystal processing method for silicon carbide single crystal growth

A silicon carbide single crystal and processing method technology, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of uneven temperature distribution on the back of the seed crystal, hexagonal voids in the crystal plane, and affecting the quality of SiC crystals, etc.

Inactive Publication Date: 2017-05-31
HEBEI SYNLIGHT CRYSTAL CO LTD
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Problems solved by technology

Therefore, it is easy to form pores on the back of the seed crystal in the prior art, resulting in uneven temperature distribution on the back of the seed crystal; due to the high te

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  • Seed crystal processing method for silicon carbide single crystal growth

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[0020] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below in conjunction with specific examples. The embodiments described below are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0021] Aiming at the problems existing in the prior art, the present invention provides a seed crystal treatment method for silicon carbide single crystal growth, which obtains two layers of dense graphite layers on the back of the seed crystal through a one-step method, and the graphite layers can remain stable at high temperatures , thereby suppressing the occurrence of sublimation on the back side of the seed crystal, thereby eliminating the planar hexagonal cavity defects caused by the sublimation on the back side during the crystal growth process, and greatly improving the quality of the silicon carbid...

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Abstract

In order to solve the problems in the prior art, the invention provides a seed crystal processing method for silicon carbide single crystal growth. The back of a seed crystal is enabled to obtain two compact graphite layers by means of a one-step method, and the graphite layers can be maintained to be stable at high temperature, so that the sublimation of the back of the seed crystal is inhibited; therefore, a plane hexagonal hole defect caused by the sublimation of the back of the seed crystal in a crystal growth process can be eliminated, and the quality of a silicon carbide crystal is greatly improved. The method is easy to implement, the cost is controllable, and the method has prominent large-scale application prospect.

Description

technical field [0001] The invention belongs to the application field of high-frequency devices, and mainly relates to a seed crystal processing method for silicon carbide single crystal growth. Background technique [0002] As a representative of the third-generation semiconductor single crystal material, SiC has the characteristics of wide band gap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift velocity, and excellent chemical stability. These excellent properties make SiC crystal It has broad application prospects in the working environment of high temperature, high pressure and strong radiation, and will have an important impact on the development of electronic information industry technology in the future. [0003] A common method for preparing large-diameter SiC crystals is the physical vapor transport method (Physical Vapor Transport). The silicon carbide powder is placed at the bottom of a crucible made of closed gr...

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Application Information

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IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B29/36
Inventor 乔松杨继胜杨昆高宇郑清超
Owner HEBEI SYNLIGHT CRYSTAL CO LTD
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