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Laminated wafer and manufacturing method thereof

A technology for bonding wafers and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as thick oxide films, and achieve the effect of reducing the number of steps

Active Publication Date: 2008-02-13
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, an extremely thick oxide film remains on the plateau portion after peeling off, which causes the above-mentioned problems

Method used

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  • Laminated wafer and manufacturing method thereof
  • Laminated wafer and manufacturing method thereof
  • Laminated wafer and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0097] First, mirror-polished CZ wafers with a diameter of 200 mm, conductivity type p-type, and resistivity of 4-6 Ω·cm were prepared as base wafers and bonded wafers. Next, these wafers were closely attached according to the steps (a) to (c) in Figure 1, and bonded and heat-treated for 3 hours at 1150°C in an oxygen atmosphere to manufacture the bonded wafer as shown in Figure 1(d). Circle 1.

[0098] Next, as shown in FIG. 1( e ), the outer peripheral portion of the bonded wafer 2 is ground from the outer peripheral direction of the wafer toward the center using a grinding device. The thickness t is 50 micrometers.

[0099] Next, the unbonded portion of the outer peripheral portion of the bonded wafer 2 is removed by etching. The etchant for this etching uses NaOH, and the entire wafer is immersed in NaOH for etching. The etching amount was 90 microns, and the wafer shown in Fig. 1(f) was obtained.

[0100] Next, the surface of the bonding wafer 2 is ground and polished...

Embodiment 2

[0105] First, mirror-polished CZ wafers with a diameter of 200 mm, a conductivity type of p-type, and a resistivity of 4-6 Ω·cm were prepared as base wafers and bonding wafers, respectively. Next, a 5-micron oxide film was formed on the base wafer as shown in FIG. 5, and the Si layer bonded to the wafer was transferred to the base wafer using the SMART CUT method (registered trademark) to obtain an SOI wafer. Subsequently, a stabilizing heat treatment is performed.

[0106] At this time, since an oxide film of 5 micrometers was present on the terrace portion of the SOI wafer, the oxide film was removed by spin etching using the apparatus shown in FIG. 6 . A 50% HF aqueous solution was used as an etching solution, and the etching solution was directly supplied to the terrace portion for 5 minutes to remove the oxide film on the terrace portion. In addition, during the spin etching, pure water is supplied as the protective fluid 12 to the central portion of the SOI wafer to pre...

Embodiment 3

[0110] First, mirror-polished CZ wafers with a diameter of 200 mm, a conductivity type of p-type, and a resistivity of 4-6 Ω·cm were prepared as base wafers and bonding wafers, respectively. Next, a 400nm oxide film was formed on the base wafer as shown in FIG. 5, and the Si layer bonded to the wafer was transferred to the base wafer using the SMART CUT method (registered trademark) to obtain an SOI wafer. Subsequently, a stabilizing heat treatment is performed.

[0111] At this time, since an oxide film of 400 nm was present on the terrace portion of the SOI wafer, the oxide film was removed by spin etching using the apparatus shown in FIG. 6 . A 50% HF aqueous solution was used as an etching solution, and the etching solution was directly supplied to the terrace portion for 1 minute to remove the oxide film on the terrace portion. In addition, during the spin etching, pure water is supplied as the protective fluid 12 to the central portion of the SOI wafer to prevent the et...

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PUM

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Abstract

Disclosed is a method for manufacturing a bonded wafer which comprises a step for etching an oxide film in a terrace portion of the edge of a bonded wafer which is formed by bonding at least a base wafer and a bond wafer. This method for manufacturing a bonded wafer is characterized in that etching of the oxide film in the terrace portion is performed by spin etching while holding and rotating the bonded wafer. By this method, the oxide film formed in the terrace portion of the base wafer can be efficiently etched without etching the oxide film on the backside of the base wafer.

Description

technical field [0001] The present invention relates to a method for manufacturing a bonded wafer and the bonded wafer, and in particular to a method of etching an oxide film formed on a terrace of the bonded wafer. Background technique [0002] Wafers for high-performance devices are bonded wafers formed by bonding semiconductor wafers to other wafers, etc., and thinning the wafer on the device-manufacturing side. [0003] Specifically, for example, two mirror-polished silicon wafers are prepared, and an oxide film is formed on at least one side of the wafers. Next, after bonding these wafers, heat treatment is performed at a temperature of 200 to 1200° C. to increase bonding strength. Thereafter, by grinding and polishing the wafer (bonded wafer) on the side of the component to be manufactured, the bonded wafer is made to a desired thickness, and the bonded wafer is thinned, and a SOI (Silicone On Insulator) is formed. layers of bonded SOI wafers. [0004] There is anot...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/304H01L21/306H01L27/12
CPCH01L21/6708H01L21/187H01L21/2007H01L21/31111H01L21/76256H01L21/76251H01L27/12H01L21/20
Inventor 武井时男吉泽重幸宫崎进横川功能登宣彦
Owner SHIN-ETSU HANDOTAI CO LTD
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