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Sputter coating method

A sputtering coating and sputtering technology, applied in sputtering coating, ion implantation coating, vacuum evaporation coating, etc., can solve the problem of difficult sputtering of strong magnetic targets, difficulty in improving film quality, and low target utilization and other problems, to achieve high sputtering rate, increase utilization rate, and improve the effect of crystallization quality

Inactive Publication Date: 2009-10-28
SUZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a sputtering coating method to overcome the shortcomings of the existing magnetron sputtering coating method, such as low target utilization, difficulty in improving film quality, and difficulty in sputtering strong magnetic targets.

Method used

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Embodiment 1

[0023] Embodiment 1: A sputtering coating method, using magnetic field assisted sputtering mode coating, see attached figure 1 As shown, the target 1 and the substrate 2 are arranged in parallel in the electric field, and the target 1 is located on the surface of the cathode 4, so that a plasma region is formed between the target 1 and the substrate 2, and the ions bombard the target 1 to generate sputtering, and the sputtered Atoms or molecules of the target are deposited on the substrate 2 to form a thin film. The target 1 is located in the magnetic field generated by the magnet 3, and the direction of the magnetic field is set perpendicular to the surface of the target.

[0024] In the present embodiment, the generation method of the magnetic field that the described direction is perpendicular to the surface of the target is to set a magnet 3 in the sputter coating cathode 4, the magnet 3 can be a permanent magnet or an electromagnet, and one pole of the magnet 3 points to t...

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Abstract

The invention discloses a sputter coating method, which adopts a magnetic field-assisted sputtering mode for coating, wherein a target and a substrate are arranged in parallel inside an electric field between two electrodes; the target is positioned on the surface of a cathode; the substrate is positioned on an anode; a plasma is formed between the target and the substrate; the target is bombarded by ions to generate sputtering; and sputtered target composition particles are deposited on the substrate to form a membrane. The sputter coating method is characterized in that: the target is positioned inside a magnetic field generated by a permanent magnet or an electromagnet or an electromagnetic coil, and the direction of the magnetic field is perpendicular to the surface of the target. The method can greatly improve the speed of sputter coating and the crystallization quality of the coating, integrally and uniformly etch the target, improve the utilization rate of the target to between 85 and 90 percent, and obtain higher sputtering speed and the same sputtering effect for both magnetic targets and nonmagnetic targets.

Description

technical field [0001] The invention relates to a preparation method of a thin film material, in particular to a method for realizing sputter coating with the assistance of a magnetic field. Background technique [0002] Since 1870, the phenomenon of sputtering has been used for the preparation of thin films. The principle of sputtering coating is that high-speed particles (mostly positive ions accelerated by an electric field) bombard the target surface, and the atoms and molecules on the target surface exchange energy with the high-speed particles and escape from the target surface. This phenomenon is called sputtering. When the ejected target atoms or molecules meet the surface of the substrate, condensation and deposition will occur on the surface of the substrate, and the deposited atoms or molecules will diffuse on the surface, nucleate and form clusters, grow up and finally form a thin film layer. The main parameters characterizing sputtering characteristics are sput...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
Inventor 狄国庆
Owner SUZHOU UNIV
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