The invention discloses a preparation method of a
tellurium-
cadmium-mercury ring hole array with a high
aspect ratio. The preparation method comprises the following steps: depositing a
passivation layer and a sacrificial layer on the surface of a
tellurium-
cadmium-mercury material, preparing graphical
photoresist on the sacrificial layer, and preparing ring holes by adopting an
ion beam
etching process with periodically variable angles and energy. According to the method, the sacrificial layer and the thin
photoresist hard and soft
mask are combined, so that the thickness of the photoetching
mask can be reduced, the emitting range of a backwash object is enlarged, and the
etching shadow effect and the
etching damage of the material surface are reduced; periodic
variable angle and energy etching changes the
sputtering direction of the etched
sediment and reduces the deposition of residues in holes on one hand, and on the other hand, part of the
sediment can be etched and removed through periodic angle change, energy in part of the time period in the period is increased, and larger
kinetic energy is provided for
sputtering particles. The emergent angle distribution can be optimized, the secondary
sputtering probability of sediments is increased, and deposition is inhibited. The method is suitable for preparing the ring hole array with the ring hole
diameter being smaller than or equal to 2 micrometers and the depth-to-
width ratio being larger than or equal to 2.5: 1.