Method for doping fin field-effect transistors

Abstract

An embodiment of the disclosure includes a method for doping a FinFET (fin field-effect transistors). In the method, a dopant-rich layer comprising a dopant is formed on a top surface and sidewalls of a semiconductor fin of a substrate. A cap layer is formed to cover the dopant-rich layer. The substrate is annealed to drive the dopant from the dopant-rich layer into the semiconductor fin. Multiple embodiments of the method can improve disadvantages of traditional LDD technology. For example, in different embodiments, a dopant-rich layer and a cap layer are formed, and a tempering technology driving impurities to the LDD zone to reach the required thickness without considering shadow effect and PAI twin boundary defects is provided. Therefore, electricity of the device can be improved.

Description

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AI Technical Summary

Benefits of technology

The technical effect that this patented method improves upon existing methods by providing better control over how well different layers are formed during manufacturing. This helps prevent problems such as unwanted deposition or contamination on other parts of the chip caused by insufficient heat treatment at certain points within each step.

Problems solved by technology

This patented technical problem addressed in the patents relates to improving the performance of CMOS FINFET devices during rapid progressive scaling while reducing issues with dopants being introduced due to tilting or misalignment techniques such as PALOX process steps for forming LDD regions.

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