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47results about How to "Increased read range" patented technology

Ultrathin high-gain narrow beam antenna and anti-theft carpet

The invention discloses an ultrathin high-gain narrow beam antenna. The ultrathin high-gain narrow beam antenna comprises an oscillator reflection plate, and an antenna oscillator and a feed network which are arranged on the oscillator reflection plate. The antenna oscillator comprises a first oscillator, a second oscillator and a third oscillator which are sequentially arranged on the same surface of the oscillator reflection plate at intervals, wherein each antenna oscillator is a square metal plate, the side length of the square metal plate is 0.25[lambda], and [lambda] represents the central wavelength of the antenna. According to the invention, the three antenna oscillators 2 with the side length of 0.25[lambda] are arranged on the same surface of the oscillator reflection plate at intervals, so that the structure is compact, and the thin and small antenna is favorably achieved. The beam width is reduced and the gain is increased by combining a specific oscillator reflection plateand a feed network through array combination. Through experimental simulation, the gain of the ultrathin high-gain narrow beam antenna provided by the present embodiment is above 9dBi, and the 3dB width is less than 45 degrees. The invention also discloses an anti-theft carpet.
Owner:无锡凯施智联软件科技有限公司

Three-dimensional memory and reading method thereof

ActiveCN110910933AReduce the possibility of misreadingSolve the problem of misreadingDigital storageBit linePhase-change memory
The invention discloses a three-dimensional memory and a reading method thereof. The three-dimensional memory includes a phase change memory cell and a gating tube, wherein the phase change memory cell is connected with the gating tube in series to form a series structure; and is located between a word line and a bit line; the word lines and the bit lines are stacked in multiple layers to form a three-dimensional structure; when the phase change memory cell is in a high resistance state and when the gating tube is just opened, the voltage at the two ends of the phase change memory cell is smaller than the threshold voltage for converting the phase change memory cell from a high resistance state to a low resistance state; therefore, the phase change memory cell is not enough to generate phase change; only when the voltage at two ends of the three-dimensional memory is continuously increased to enable the voltage at two ends of the phase change memory cell to exceed the threshold voltage; and therefore, the phase change memory cell is subjected to phase change only when the threshold voltage of the phase change memory cell is larger than the threshold voltage of the phase change memory cell, and then the range of the read voltage is enlarged, and the margin of the optional read voltage is larger, and the problems of misreading and misoperation are reduced, and the utilization rate of the threshold voltage of the phase change memory cell is increased, and the requirement on the threshold voltage of the phase change memory cell is reduced.
Owner:HUAZHONG UNIV OF SCI & TECH
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