A three-dimensional memory and its reading method

Abstract

The invention discloses a three-dimensional memory and a reading method thereof, comprising a phase-change memory unit and a gate transistor, wherein the phase-change memory unit and the gate transistor are connected in series to form a series structure, and are located between a word line and a bit line, and the word line Multi-layer stacking with the bit line to form a three-dimensional structure. When the phase-change memory cell is in a high-resistance state and the gate is just turned on, the voltage across the phase-change memory cell is less than that of the phase-change memory cell. The threshold voltage of the phase change memory cell is not enough to undergo a phase change. Only when the voltage across the three-dimensional memory continues to increase and the voltage across the phase change memory cell exceeds its threshold voltage, the phase change memory cell will undergo a phase change. The range of the read voltage is widened, the margin of the optional read voltage is large, the problems of misreading and misoperation are reduced, the utilization rate of the threshold voltage of the phase change unit is increased, and the threshold voltage of the phase change memory unit is reduced. voltage requirements.

Description

technical field [0001] The invention belongs to the field of micro-nano electronics, and more specifically relates to a three-dimensional memory and a reading method thereof. Background technique [0002] The next-generation new non-volatile memory devices such as phase-change memory cells and resistive memory devices have become the most popular next-generation memory due to their extremely fast erasing and writing speeds, excellent miniaturization performance, and three-dimensional stacking. In particular, phase change memory, as one of the most important new-generation memory technologies, has shown great promise in terms of product capacity, storage density, process size, stability, read and write performance, erasing and writing life, and device power consumption. Advantage. In addition to non-destructive reading, lifespan, non-volatility, and erasing speed, PCRAM also has competitive advantages such as multi-valued storage, compatibility with existing processes, and t...

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Problems solved by technology

[0007] Aiming at the defects of the prior art, the purpose of the present invention is to propose a three-dimensional memory and its reading method, aiming to solve the problem that the reading voltage range in the prior art is limited by the voltage of the phase-change memory cell when the gate tube is turned on. The read voltage range caused by the value is small, which causes the problem of misreading

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