47results about How to "Reduce misreading" patented technology

By decreasing the threshold voltage shift due to the potential change of the cells adjacent in a word line direction, the reliability of a flash memory can be enhanced. Memory cells of a flash memory are formed in p-type wells of a semiconductor substrate and include gate insulator films, floating gates, high-K insulator films, and control gates (word lines). The floating gates and control gates (word lines) are isolated by high-K insulator films. The plurality of memory cells arrayed in row a direction are isolated by isolation trenches extending in a column direction. In the isolation trenches, a silicon oxide film is embedded. In the silicon oxide film, an air gap is provided. A lower end of the air gap extends near to the bottom of the isolation trench, and its upper end extends further above the upper surface of the high-K insulator film covering the floating gate.

NDT inspection of an austenitic weld between two CRA Clad pipes using a phased ultrasonic transducer array system is described. The method may be performed during laying of gas/oil fatigue sensitive pipelines, for example, at sea. Two types of UT inspection may be generated simultaneously by a Phased Array on each side (Upstream and Downstream) of a girth weld. Firstly, mode converted longitudinal waves are used. These waves have properties that they propagate well. Shear waves are also used. The combination of these two ultrasonic waves, with the addition of surface waves, enables 100% of the girth weld to be inspected to the standard required in fatigue sensitive welds, such as Steel Catenary Risers. Shear waves and compression waves are emitted substantially contemporaneously. Defects may be detected and measured using time of flight information and amplitudes of radiation detected on reflection and on diffraction from the defect.

The gas monitoring system may include a gas line, an oxygen sensor, a filter, a pump, a indicator, and a controller. The gas line is configured to convey gas from a space configured to receive inert gas to a location remote from the space. The oxygen sensor is fluidly coupled to the gas line at the location. The oxygen sensor is configured to determine a partial pressure of oxygen present in the gas. The filter is fluidly coupled to the gas line between the space and the location. The filter is configured to remove combustible contaminants from the gas before it reaches the oxygen sensor. The controller is electrically coupled to the oxygen sensor and to the indicator. The controller is configured to activate the indicator when the partial pressure of oxygen exceeds a predetermined level.

The invention relates to an automatic equipment identification (AEI) method and an AEI system. The AEI method includes the following steps: monitoring tag information carrying a train number and sent by a train radio frequency identification (RFID) tag, and starting a camera device to take an image of the area on a train where a train number is located; after positioning a character zone in the image and splitting the character zone from the image, identifying the train number in the character zone; comparing the identified train number and the train number sent by the RFID tag, sending data indicating the train number to an external preset address if the identified train number is identical to the train number sent by the RFID tag, and sending an alarm message if the identified train number is not identical to the train number sent by the RFID tag. The invention adopting the technical scheme has the advantages that the automatic image identification method and the RFID tag identification method are creatively combined, and the results from the two methods verify each other, so as to reduce wrong and omitted train number reading, and improve the AEI accuracy.

The invention relates to a method for segmenting Chinese and English mixed typeset character images. The method includes acquiring a text line image area and acquiring the line height of the text line image area; splitting the text line image area by a projection process to acquire character blocks; acquiring block heights and block widths of the character blocks; and extracting Chinese character areas according to the line height, the block heights and the block widths. In addition, the invention discloses a device for segmenting the Chinese and English mixed typeset character images. The method and the device for segmenting the Chinese and English mixed typeset character images have the advantage that the recognition precision rate can be increased.

A non-volatile semiconductor memory device includes a sense amplifier, first and second bit lines that are connected to the sense amplifier, a first memory cell column that is connected to the first bit line, the first memory cell column being formed by a plurality of MONOS type transistors, a first constant current source that is connected to the second bit line, the first constant current source generating a reference current for the first memory cell column, and a first switch that is provided between the first constant current source and the second bit line, the first switch being formed by a MONOS type transistor.

Disclosed herein is a device that includes: a first control element that controls an amount of current flowing between a second line and a first node according to a potential of a first line; a second control element that controls an amount of current flowing between the first line and the first node according to a potential of the second line; a first control circuit that performs a first operation to fix potentials of the first and second lines at a first potential; a second control circuit that performs a second operation to connect the first node to the second node; and a third control circuit that fixes a potential of the first node at a second potential after the first control circuit stops the first operation until the second control circuit starts the second operation.

An optical reproducing method using an optical medium having an aligned prepit portion straddled on a plurality of tracks in a radius direction. The prepit portion includes a first and second prepit portion divided in a track direction with a gap therebetween and with a synchronous information prepit of the respective first and second prepit portion being arranged on a boundary of the respective tracks. The synchronous information prepit and the first and second prepit portion is arranged at every two-track pitch in the radius direction and at opposite boundaries of the same track. An optical spot is irradiated on the optical medium, a reflected beam is detected from the optical medium, and information on the optical medium is reproduced by using a signal obtained by the reflected beam.

The invention discloses a three-dimensional memory and a reading method thereof. The three-dimensional memory includes a phase change memory cell and a gating tube, wherein the phase change memory cell is connected with the gating tube in series to form a series structure; and is located between a word line and a bit line; the word lines and the bit lines are stacked in multiple layers to form a three-dimensional structure; when the phase change memory cell is in a high resistance state and when the gating tube is just opened, the voltage at the two ends of the phase change memory cell is smaller than the threshold voltage for converting the phase change memory cell from a high resistance state to a low resistance state; therefore, the phase change memory cell is not enough to generate phase change; only when the voltage at two ends of the three-dimensional memory is continuously increased to enable the voltage at two ends of the phase change memory cell to exceed the threshold voltage; and therefore, the phase change memory cell is subjected to phase change only when the threshold voltage of the phase change memory cell is larger than the threshold voltage of the phase change memory cell, and then the range of the read voltage is enlarged, and the margin of the optional read voltage is larger, and the problems of misreading and misoperation are reduced, and the utilization rate of the threshold voltage of the phase change memory cell is increased, and the requirement on the threshold voltage of the phase change memory cell is reduced.

The invention relates to an electronic shelf label. The electronic shelf label comprises a transparent lens cover plate used for covering a display screen of the electronic shelf label and a coating layer printed at the inner side of the transparent lens cover plate; definition and marking are carried out in the coating layer through laser. An application method of laser radium carving in the electronic shelf label includes the steps that 41, the transparent lens cover plate is provided and used for covering the display screen of the electronic shelf label; 42, the coating layer is printed at the inner side of the transparent lens cover plate; 43, the coating layer is cauterized and eliminated through laser at the high temperature; 44, continuous laser is added, and graphic texts are cauterized on the transparent lens cover plate. ID is cauterized on the inner side of the transparent lens cover plate, and the electronic shelf label is different from a paster which is easy to be peeled off or damaged.

The invention discloses a long character string display method, a system, a storage medium and a terminal. The method comprises the steps: segmenting a selected continuous character string when the length of the continuous character string is greater than a preset value N; wherein the continuous character strings do not contain spaces, punctuation marks, line feed marks and Chinese characters; displaying segmented character strings. According to the invention, the possibility of wrong reading and missed reading of the long character string can be reduced.

The invention discloses a resistive random access memory unit based on resistance voltage division reading. The resistive random access memory unit comprises a first transistor, a resistive unit and asecond transistor, wherein one end of the resistive unit is connected in series with the drain electrode of the first transistor, and a connection point is used as a voltage division point; and the gate of the second transistor is connected to the voltage division point; and the first transistor and the resistive unit realize resistance voltage division. According to the resistive random access memory unit based on resistance voltage division reading provided by the invention, the resistance voltage division of one transistor and the resistance voltage division of the resistive random accessmemory unit is utilized, and the grid electrode of the other transistor is utilized to amplify a voltage change signal of the voltage division point to increase a reading window caused by high and lowresistance states, thereby being beneficial to reducing misreading caused by device and process parameter fluctuation.

A chip on film package structure including a flexible film, a patterned metal layer, a chip, a patterned solder resist layer, and a code-included pattern is provided. The flexible film comprises a chip mounting region and a peripheral region surrounding the chip mounting region. The patterned metal layer disposed on the flexible film. The chip mounted on the chip mounting region and electrically connected to the patterned metal layer. The patterned solder resist layer exposing the chip mounting region and covering a part of the patterned metal layer. The code-included pattern disposed on the peripheral region of the flexible film. The code-included pattern comprises a plurality of machine-readable data. A method for reading a code-included pattern on a package structure is also provided.

A magnetic-ink-character recognizing device and a control method are disclosed for increase in the character recognition rate. The device includes a magnetic head, a conveying section configured to convey a medium on which magnetic ink characters are printed, an acquiring section configured to acquire a magnetism detection signal read by the magnetic head, a segmenting section configured to segment waveform data of the magnetic ink characters from the magnetism detection signal, a first calculating section configured to compare the waveform data segmented by the segmenting section and reference waveform data and calculate similarities of both the data, respectively, a second calculating section configured to compare the waveform data segmented by the segmenting section and extended waveform data obtained by compressing or expanding length in a time axis direction of the reference waveform data and calculate similarities of both the data, respectively, and to recognize the magnetic inkcharacters of the waveform data segmented by the segmenting section.

The present invention relates to the memory technical field, and in particular relates to a read method for responding to FLASH chip abnormal power-down. The read method for responding to FLASH chip abnormal power-down is as follows: reading a FLASH chip power-down protection unit; wherein the power-down protection unit is used for recording address information of a current erase area in a FLASH chip storage array when a FLASH chip abnormally powers down during erase process; when the power-down protection unit stores address information, reading the address information; when the address information is same as the address information of a pre-read area, performing read correction on a storage array area corresponding to the address information, wherein the read correction is adjustment of read current during read; and after the read correction, reading the pre-read area. According to the read method for responding to FLASH chip abnormal power-down, after the read correction of a storage unit which is not erasure-corrected during abnormal power-down, the pre-read area is read, misreading during reading can be reduced, and the reliability of the FLASH chip can be improved.