Resistive random access memory unit based on resistance voltage division reading

A technology of storage unit and resistive variable unit, which is applied in the direction of information storage, static memory, digital memory information, etc., can solve the problems of misreading, small reading window of resistive variable memory, and limited tolerance, so as to increase the reading window, Avoid direct reading interference and reduce the effect of misreading
CN110956993AInactive Publication Date: 2020-04-03INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Publication Date
2020-04-03
Estimated Expiration
Not applicable ยท inactive patent

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Abstract

The invention discloses a resistive random access memory unit based on resistance voltage division reading. The resistive random access memory unit comprises a first transistor, a resistive unit and asecond transistor, wherein one end of the resistive unit is connected in series with the drain electrode of the first transistor, and a connection point is used as a voltage division point; and the gate of the second transistor is connected to the voltage division point; and the first transistor and the resistive unit realize resistance voltage division. According to the resistive random access memory unit based on resistance voltage division reading provided by the invention, the resistance voltage division of one transistor and the resistance voltage division of the resistive random accessmemory unit is utilized, and the grid electrode of the other transistor is utilized to amplify a voltage change signal of the voltage division point to increase a reading window caused by high and lowresistance states, thereby being beneficial to reducing misreading caused by device and process parameter fluctuation.
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Description

technical field

[0001] The invention relates to the field of circuit structure and storage technology, in particular to a resistive storage unit read based on resistance voltage division. Background technique

[0002] In a conventional resistive memory (RRAM), a one-transistor-one-resistor (1T1R) structure is generally adopted. When performing a read operation, turn on the word line (word-line, WL) of the selected cell, and read the data by reading the current between the source line (source line, SL) and the bit line (bitline, BL). The window is determined by the current change caused by the high and low resistance states of the resistive memory cell. However, due to the limited variation range of the resistance value of the device itself, the RRAM is faced with the problem of a small read window, and the small read window has a very limited tolerance to device parameter fluctuations, which is easy to cause misreading. Contents of the invention

[0003] In view of this,...

Claims

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