A memory programming method and related device

Abstract

The present invention discloses a memory programming method and a related device, wherein the memory programming method includes the following steps: After the storage unit of the memory is programmed to meet the first preset condition, judging whether the storage unit satisfies the second preset condition. A preset condition: perform programming again for the memory cells that do not meet the second preset condition. In this way, the distribution range of the entire programming state is reduced, the read window between states is increased, and all programming states have better retention characteristics.

Description

technical field [0001] The present invention relates to the technical field of memory devices, in particular to a memory programming method and a related device. Background technique [0002] Memory is a memory device used to save information in modern information technology. As a typical non-volatile semiconductor memory, the known NAND (Not-And, NAND) flash memory has higher storage density, controllable production cost, suitable programming and erasing speed and retention characteristics. Has become a mainstream product in the storage market. [0003] After programming each memory cell of the memory, the threshold voltage of each memory cell is changed, thereby realizing information storage. However, it is found in the distribution of the programmed states actually read that there are always some memory cells whose threshold value is lower than the target threshold value after programming, which broadens the overall threshold distribution range of the memory. Research ...

AI Technical Summary

Problems solved by technology

However, in the distribution of the programmed states actually read, it is found that there are always some memory cells whose threshold value is lower than the target threshold value after programming, which broadens the overall threshold distribution range of the memory.

Research has found that a large part of the above problems is due to the rapid charge leakage after programming, which is mainly due to the fact that some of the electrons are stored in the shallow energy level of the tunneling layer or storage layer during the programming process, and this part of the electrons quickly will run back into the channel, causing the threshold voltage of the memory cell to drop

This process happens very quickly, and the situation in actual products is also more complicated, but the final result basically causes the distribution of the entire programming state to widen, and eventually leads to a smaller read window between states.

Images