Memory programming method and related device

A programming method and memory technology, applied in static memory, read-only memory, information storage, etc., can solve problems such as fast charge leakage, memory cell threshold voltage drop, and read window reduction, and achieve increased read window and good retention characteristics. , the effect of narrowing the distribution

Active Publication Date: 2019-07-05
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology

However, in the distribution of the programmed states actually read, it is found that there are always some memory cells whose threshold value is lower than the target threshold value after programming, which broadens the overall threshold distribution range of the memory.
Research has found that a large part of the above problems is due to the rapid charge leakage after programming, which is mainly due to the fact that some of the electrons are stored in the shallow energy level of the tunneling layer or storage layer during the programming process, and this part of the electrons quickly will run back into the channel, causing the threshold voltage of the memory cell to drop
This process happens very quickly, and the situation in actual products is also more complicated, but the final result basically causes the distribution of the entire programming state to widen, and eventually leads to a smaller read window between states.

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[0038] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the specific embodiments set forth herein. On the contrary, these embodiments are provided for a more thorough understanding of the present invention and to fully convey the scope of the disclosure of the present invention to those skilled in the art.

[0039] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are no...

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Abstract

The invention discloses a memory programming method and a related device, wherein the method comprises the following steps of judging whether a storage unit of a memory meets a second preset conditionor not after the storage unit of the memory is programmed to meet the first preset condition; and performing programming again on the memory cells which do not meet the second preset condition. Therefore, the distribution range of the whole programming state is reduced, and the reading window between states is increased, so that all the programming states have better retention characteristics.

Description

technical field [0001] The present invention relates to the technical field of memory devices, in particular to a memory programming method and a related device. Background technique [0002] Memory is a memory device used to save information in modern information technology. As a typical non-volatile semiconductor memory, the known NAND (Not-And, NAND) flash memory has higher storage density, controllable production cost, suitable programming and erasing speed and retention characteristics. Has become a mainstream product in the storage market. [0003] After programming each memory cell of the memory, the threshold voltage of each memory cell is changed, thereby realizing information storage. However, it is found in the distribution of the programmed states actually read that there are always some memory cells whose threshold value is lower than the target threshold value after programming, which broadens the overall threshold distribution range of the memory. Research ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34
CPCG11C16/3459
Inventor 刘红涛黄莹魏文喆王明
Owner YANGTZE MEMORY TECH CO LTD
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