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Plasma processing apparatus and method

A plasma and processing device technology, which is applied in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., and can solve the problem that the etching selectivity ratio of Low-k film and SiC layer cannot be fully ensured.

Active Publication Date: 2011-08-17
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, plasma etching using the fluorocarbon-based processing gas described in Patent Document 2 and Patent Document 3 cannot sufficiently ensure the etching selectivity ratio between the Low-k film and the SiC layer.

Method used

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  • Plasma processing apparatus and method

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Experimental program
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Embodiment approach 1

[0213] First, the first embodiment will be described. figure 1 It is a schematic cross-sectional view showing the plasma etching apparatus according to the first embodiment of the present invention.

[0214] This plasma etching apparatus is configured as a capacitively coupled parallel plate plasma etching apparatus, and has a substantially cylindrical chamber (processing container) 10 made of, for example, aluminum whose surface is anodized. The chamber 10 is safety grounded.

[0215] At the bottom of the chamber 10 , a cylindrical susceptor support 14 is arranged via an insulating plate 12 made of ceramics or the like, and a susceptor 16 made of, for example, aluminum is provided on the susceptor support 14 . The susceptor 16 constitutes a lower electrode, and a semiconductor wafer W serving as a substrate to be processed is placed thereon.

[0216] An electrostatic chuck 18 that attracts and holds the semiconductor wafer W by electrostatic force is provided on the upper ...

Embodiment approach 2

[0364] Next, a second embodiment of the present invention will be described.

[0365] Figure 34 It is a schematic cross-sectional view showing a plasma etching apparatus according to a second embodiment of the present invention. exist Figure 34 in, with figure 1 The same components are marked with the same symbols, and explanations are omitted.

[0366] In this embodiment, instead of the upper electrode 34 of the first embodiment, an upper electrode 34' having the following structure is provided. The upper electrode 34' is composed of a ring-shaped outer upper electrode 34a disposed opposite to the susceptor 16 at a predetermined interval, and a disc-shaped inner upper electrode 34b disposed radially inward of the outer upper electrode 34a in an insulated state. constitute. These are involved in the generation of plasma, and have a relationship in which the outer upper electrode 34 a is the main one and the inner upper electrode 34 b is the auxiliary one.

[0367] as ...

no. 3 approach

[0410] In the third embodiment, components common to those in the first and second embodiments are denoted by the same symbols.

[0411] Figure 40 It is a schematic cross-sectional view showing a plasma etching apparatus according to a third embodiment of the present invention.

[0412] That is, it applies high-frequency (RF) power of, for example, 40 MHz for plasma generation from the first high-frequency power supply 88 to the susceptor 16 as the lower electrode, and supplies the susceptor 16 as the lower electrode from the second high-frequency power supply 90 . 16. A lower RF dual-frequency application type plasma etching apparatus for applying high-frequency (RF) power of, for example, 2 MHz for ion introduction. As shown in the figure, a variable DC power supply 50 is connected to the upper electrode 34 to apply Plasma etching apparatus with specified direct current (DC) voltage. use Figure 41 The plasma etching apparatus will be described in detail.

[0413] This ...

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PUM

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Abstract

There is provided a plasma etching device for generating plasma as a processing gas between an upper electrode (34) and a lower electrode (16) and subjecting a wafer (W) to plasma etching. The upper electrode (34) includes a variable DC power source (50) for applying DC voltage so that the absolute value of the self bias voltage Vdc on the surface of the upper electrode (34) becomes large enough to obtain an appropriate sputter effect to the surface and the thickness of the plasma sheath on the upper electrode (34) becomes thick enough to form a desired miniaturization plasma.

Description

[0001] This case is filed on June 21, 2005 , the application number is 200580020518.0 (PCT / JP2005 / 011333) , the name of the invention is Plasma treatment apparatus and method The divisional application of the patent application (the application number for the divisional application is 200710004237.7 ). technical field [0002] The present invention relates to a plasma processing device, a plasma processing method, and a computer-readable storage medium for performing plasma processing on substrates to be processed such as semiconductor substrates. Background technique [0003] For example, in the manufacturing process of a semiconductor device, in order to form a predetermined pattern on a predetermined layer formed on a semiconductor wafer as a substrate to be processed, a plasma etching process using a resist as a mask and etching with plasma is often used. [0004] As a plasma etching apparatus for performing such plasma etching, various apparatuses are used, and a ...

Claims

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Application Information

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IPC IPC(8): H01L21/3065H01J37/32H01L21/311
CPCH01J37/32706H01L21/31116H01L21/31138H01J2237/3342H01J37/32532H01J37/32091H01J37/32165H01L21/3205
Inventor 舆石公杉本胜日向邦彦小林典之舆水地盐大谷龙二吉备和雄齐藤昌司松本直树大矢欣伸岩田学矢野大介山泽阳平花冈秀敏速水利泰山崎广树佐藤学
Owner TOKYO ELECTRON LTD
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