23 results about "Plasma density distribution" patented technology

The invention provides an etching parameter adjusting method and device in MOSFET chip production, and relates to the technical field of semiconductors, and the method comprises the steps: obtaining plasma density distribution data and an etching rate monitoring value of a wafer surface, and dynamically dividing the wafer surface into a plurality of segment independent control units; adjusting a radio frequency power distribution weight, and synchronously adjusting a reaction gas injection parameter; carrying out coupling analysis on the concentration gradient of the etching by-product and the matching degree of the surface morphology of the wafer; and when the deviation of the target value threshold is detected, temperature compensation and air pressure compensation are carried out. According to the method and the device, the technical problem of poor etching precision of the MOSFET chip caused by non-uniform etching rates of different regions in the etching process is solved, and the uniformity of the etching rates is improved through real-time monitoring and dynamic compensation, so that the etching precision of the MOSFET chip is improved.

The invention discloses a plasma parameter probe-microwave collaborative diagnosis system. The plasma parameter probe-microwave collaborative diagnosis system comprises a diagnosis probe, a reflecting antenna, a vector network analyzer and a computer terminal, according to the method, global and local information of plasma parameters is provided through the diagnosis probe and the reflecting antenna, inversion is performed on S11 data and plasma electron density of a monitoring point where the diagnosis probe is located through the trained neural network model, and plasma density distribution and plasma collision frequency are obtained. Cooperative diagnosis of the plasma is completed, and the density distribution of the plasma and the collision frequency of the plasma can be rapidly and accurately obtained.

The invention discloses a density distribution device capable of stably generating special plasmas and an adjusting method, and can efficiently and stably provide a special gas channel of which the front part gas slowly rises and the rear edge outlet is provided with a steep density gradient falling edge. The invention relates to a gas medium channel with special plasma density structure distribution, which is used for a high-brightness laser plasma wake wave field acceleration to generate an ultrafast electron beam source and an application field of the ultrafast electron beam source. The device effectively overcomes the defects of uncontrollability, insufficient precision, short service life, complicated operation and the like in the process of producing gas channels by traditional capillary tubes, open gas pools and the like and preparing special structure density distribution such as steep falling edges, and has the advantages of simplicity in operation, convenience, high efficiency, high-precision adjustment, stable and controllable gas density distribution, electromagnetic interference resistance, durability and the like; and wide application of a high-brightness ultrafast electron beam source generated by a repetition-frequency laser tail wave field in frontier research fields such as ultrafast electron diffraction and ultrafast diagnosis is further promoted.

The present invention relates to an ion source device with adjustable plasma density, belonging to the field of semiconductor equipment. A coil is wound around the outside of a discharge chamber of the ion source device with adjustable plasma density; a radio frequency module is connected to the coil; a gas duct is introduced into the ion source chamber and communicates with the discharge chamber; a grid is provided on the same-direction open end faces of the ion source chamber and the discharge chamber; the discharge chamber is composed of two large-diameter discharge chambers and a small-diameter discharge chamber of non-uniform diameters; the large-diameter discharge chamber and the small-diameter discharge chamber are communicated; one end face of the large-diameter discharge chamber is an open end face, and the open end face faces the grid. The present invention relates to an ion source device with adjustable plasma density, which can bombard the middle area and edge area of ​​a wafer independently and as a whole by using coils at different positions, so as to adjust the plasma density distribution of the discharge chamber and ensure etching uniformity.

One illustrative embodiment of the present invention provides a plasma processing method. This method includes: a) a step in which at least one temperature detection element provided in an upper electrode of a plasma processing device is used to acquire temperature information of a reaction chamber during plasma processing, as information describing the state of plasma density; and b) a step for converting the temperature information into power information, and on the basis of the power information, adjusting power supplied from the high-frequency power supply to the reaction chamber via the upper electrode so as to reduce the plasma density distribution bias along the electrode surface of the upper electrode. The upper electrode has a gap provided adjacent to and above the electrode surface exposed to the reaction chamber, and the at least one temperature detection element includes a first temperature detection element arranged so as to measure the temperature at the bottom part of the gap.

The invention relates to the technical field of semiconductor processing control, and provides an etching uniformity optimization method based on plasma density adjustment, which comprises the following steps of: 1, acquiring plasma density and etching rate, generating a coordinate system by taking the center of a wafer as an original point and partitioning along the radial direction, mapping the plasma density and the etching rate to the coordinate system, obtaining a continuous space distribution function; 2, constructing a correlation model, and fitting the correlation model by adopting a nonlinear least square method to obtain a relationship between the plasma density and the etching uniformity; and step 3, constructing a multivariable prediction model, monitoring the plasma density in etching, and when the plasma density distribution exceeds a preset threshold value, feeding back and adjusting plasma density control parameters in real time by the multivariable prediction model. According to the method, the relation between the plasma density and the etching uniformity is quantified, then the plasma density space distribution is monitored to predict the etching uniformity, and the plasma distribution deviation is dynamically adjusted to improve the etching uniformity.

In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a peripheral direction of the second coil and has an opening below the second coil.

The present invention discloses a microwave reflectometer system capable of realizing self-calibration. The system fixes a copper wire passing through the center of the waveguide cross section at the end of the corrugated waveguide of the existing microwave reflectometer, so that while the detection microwave can be normally emitted into the plasma, a part of the microwave will be reflected by the copper wire and returned to the optical path. In this way, the intermediate frequency signal obtained after mixing by the high-frequency mixer of the microwave reflectometer contains both the plasma density distribution information and the fixed copper wire position information. Two acquisition circuits are arranged after the IF end of the high-frequency mixer. Based on the measurement path signal and the calibration path signal collected by the acquisition system, dynamic real-time calibration of the plasma density distribution information is realized. The system realizes self-calibration by adjusting the optical path and the electronic part of the microwave reflectometer system, and eliminates the influence of vibration generated during the operation of the fusion experimental device on the density distribution measurement in real time.

The invention discloses a coil device and vapor deposition equipment, and relates to the technical field of semiconductors. The coil device comprises a top plate and a first coil mechanism. The first coil mechanism comprises a first centering rotating assembly, a first mounting plate, a first coil and a first adjusting assembly, the first mounting plate is movably connected with the top plate through the first centering rotating assembly, the first centering rotating assembly is provided with a first rotating center, the first coil is mounted on the first mounting plate, and the first adjusting assembly is mounted on the top plate; the first adjusting assembly is connected with the first mounting plate and used for driving the first mounting plate to rotate around the first rotating center so as to adjust the inclination angle of the first coil. According to the coil device, the inclination angle of the coil can be rapidly adjusted, so that the inclination angle of a magnetic field is adjusted, plasma density distribution is improved, deposition uniformity is improved, and product quality is guaranteed.

To reduce deviation of plasma density distribution within a reaction chamber.SOLUTION: A plasma processing method is provided in an exemplary embodiment. This method comprises the steps of: a) acquiring temperature information on a reaction chamber at plasma processing time as information indicating a plasma density state using at least one temperature detection element that is provided in an upper electrode of a plasma processing apparatus; and b) converting the temperature information to power information and adjusting power to be supplied to the reaction chamber from a high frequency power source through the upper electrode to reduce deviation of plasma density distribution along an electrode surface of the upper electrode, on the basis of the power information. The upper electrode has an air gap that is provided adjacent to the electrode surface above the electrode surface exposed to the reaction chamber, and at least one temperature detection element includes a first temperature detection element that is arranged to measure bottom part temperature of the air gap.SELECTED DRAWING: Figure 1

The present invention provides a control method and a plasma processing device. A local plasma using a phased array antenna is controlled. As a control method for a scanning type plasma processing device using a phased array antenna, the method comprises the following steps: observing the light emission of plasma generated inside the processing container from observation windows provided at multiple locations of the processing container; calculating the in-plane distribution of values ​​representing the characteristics of the plasma on a substrate based on the observed data related to the light emission of the plasma; and correcting the scanning pattern of the plasma and / or the plasma density distribution based on the calculated in-plane distribution of values ​​representing the characteristics of the plasma on the substrate.

The present application relates to a method for analyzing the ion extraction capability of a variable aperture gate hole based on a transient gate spacing. The method comprises: obtaining the plasma temperature distribution and plasma density distribution for the ion extraction capability analysis; calculating the transient gate spacing for the ion extraction capability analysis according to the plasma temperature distribution and the thermal simulation model of the gate assembly; constructing a numerical simulation model of the gate hole for the ion extraction capability analysis according to the plasma temperature distribution, the plasma density distribution and the transient gate spacing; simulating and calculating the gate holes in each area according to the numerical simulation model of the gate hole to determine the ion extraction capability of a single gate hole for the ion extraction capability analysis, as well as the variation law between the gate spacing and the plasma density. The present application combines the plasma density distribution, the plasma temperature distribution and the transient gate spacing in the discharge chamber to obtain the ion extraction capability of a single gate hole, and accurately and quickly evaluate the performance of the ion thruster.

The invention provides a lightning protection effect evaluation method and device based on inner gap design, and the method comprises the steps: calculating the plasma density distribution, analyzing the bifurcation energy distribution, recognizing the coordinates of an electric field concentration region according to spatial distribution parameters, and obtaining a plasma density distribution map if a deviation angle or the number of bifurcations exceeds a threshold value; performing density gradient change trend analysis on the plasma density distribution map, determining the current position coordinates of an arc root attachment point, and obtaining an attachment point migration path by combining time sequence coordinate change track analysis; and recalculating the adjusted plasma density distribution uniformity index through a multi-path adaptive geometric structure, and performing compensation adjustment on an arc temperature gradient non-uniform region to obtain a stable plasma density distribution state.

The application discloses a wafer uniformity optimization method for an ICP chamber, comprising the following steps: S1, continuously monitoring accumulated radio frequency time, and judging the consumption of a focusing ring through the accumulated radio frequency time; when the accumulated radio frequency time exceeds a preset radio frequency time threshold, entering step S2; S2, for different etching process parameters, changing the power of the outer coil and the inner coil of the inductive coupling coil through adjusting the power distribution of the source radio frequency, so that the edge region and the center region of the wafer obtain different plasma density distribution, and the change of the plasma sheath layer of the edge region of the wafer caused by the consumption of the focusing ring is compensated. The application can autonomously adjust the I / O power distribution set by the process menu, compensate the change of the plasma sheath layer distribution and morphology of the edge region of the wafer caused by the consumption of the focusing ring, and maintain the uniformity stability.

This improves the controllability of the plasma density distribution generated inside the chamber. [Solution] The plasma processing apparatus comprises a chamber containing a plasma generation space U, an annular outer emission section positioned above the chamber, and a resonator that supplies electromagnetic waves to the outer emission section. The resonator has a waveguide through which electromagnetic waves generated based on high-frequency power supplied by a high-frequency power supply propagate, and a plurality of outer slots that electromagnetically couple the waveguide and the outer emission section together. The plurality of outer slots consist of a plurality of partial grooves extending along the circumferential direction of the outer emission section above the outer emission section. A switching mechanism is provided for changing the impedance of each of the plurality of outer slots. A coaxial tube is provided between the switching mechanism and the corresponding outer slot, and the switching mechanism is attached to the end of the coaxial tube opposite to the corresponding outer slot.

The invention discloses a multi-target deposition control method and system, a medium and equipment. The multi-target deposition control method comprises the following steps: acquiring angle parameters between a substrate and a plurality of targets; environmental parameters in the cavity are adjusted to meet preset standards; based on the angle parameters and a preset control strategy, electric fields are applied to the multiple target positions respectively, a uniform composite electric field is formed through superposition, and the substrate is located in the composite electric field; the target position is deposited on the substrate through the electric field to form a film material, and control parameters of the electric field are adjusted based on thickness parameters of the film material until deposition is completed; a plurality of non-parallel target positions are arranged on the outer side of a substrate, an electric field is applied to each target position, a composite electric field with uniform strength is formed at the position of the substrate, and plasma density distribution is uniform, so that the sputtering rate and direction of a target material on the target positions tend to be consistent on the surface of the whole substrate, and the uniformity of film material thickness preparation is ensured; and the electric field is uniformly distributed, so that the target material is uniformly etched, and the utilization rate can be increased from 40-50% to 60-70%.

The invention relates to the technical field of semiconductor equipment, in particular to a feed-in structure and semiconductor processing equipment, and the feed-in structure comprises an upper electrode assembly, an electrode leading-out column, a conductive sealing layer, a gas homogenizing insulating layer and an electrical connection layer; the upper electrode assembly comprises at least two electrode structures separated by an insulating structure; the plurality of electrode leading-out columns are respectively connected with the at least two electrode structures; the conductive sealing layer is used for vacuum sealing; the uniform gas insulating layer is used for distributing process gas and performing electrical isolation; the electrical connection layer is used for being connected with an external radio frequency power supply so as to independently apply radio frequency power to the at least two electrode structures, radial distribution of plasmas in the reaction cavity can be actively adjusted by partitioning the upper electrode and independently controlling the radio frequency power of each region, and the uniform gas insulation layer ensures that gas uniformly enters the reaction cavity. The conductive sealing layer realizes electric signal transmission while keeping vacuum, so that active and real-time control of plasma density distribution is realized, and the uniformity of thin film deposition is improved.

The invention relates to a substrate processing apparatus and a plasma density control method, and more specifically provides a technology capable of controlling plasma density distribution by applying a geometric structure of a shielding baffle plate as a plasma adjusting medium parameter in the substrate processing apparatus. An embodiment of a substrate processing apparatus includes: a cavity providing a process space; a substrate support unit provided in the process space, on which a substrate is placed and which supports the substrate, the substrate support unit including an edge ring attached to an outer contour of the substrate; a shutter unit disposed on the periphery of the substrate supporting unit and including an upper shutter provided with a vent hole and capable of rising and falling, a lower shutter positioned below the upper shutter, and an upper shutter raising and falling portion for raising and falling the upper shutter; and a control unit for adjusting the plasma density distribution by applying the exhaust hole of the upper baffle plate and the height caused by the lifting of the upper baffle plate as a plasma adjustment medium parameter.

The present invention discloses a measurement system and a measurement method for the plasma density distribution of a femtosecond laser filament. The system includes: a plasma charge quantity measurement system and an optical path for measuring the filament volume. The optical path for measuring the filament volume is used to measure the filament volume. The plasma charge quantity measurement system includes a pulsed laser light source, a first guiding optical path, a charge migration device, and a trigger optical path. The first guiding optical path is arranged between the pulsed laser light source and the charge migration device. The trigger optical path is used to adjust the time when the laser generated by the pulsed laser light source is incident on the charge migration device. The charge migration device includes a DC voltage generator, a high-voltage plate electrode, a shielding plate electrode, a sampling resistor, and at least a discrete plate electrode group. The high-voltage plate electrode is connected to the DC voltage generator. The discrete plate electrode group includes a plurality of discrete plate electrodes. Each discrete plate electrode is arranged at intervals along the laser direction and covers the entire filament. The discrete plate electrode and the shielding plate electrode are respectively grounded through the sampling resistor.

The application provides a kind of ion beam etching uniformity adjusting device and method, by uniformity adjusting capacitor component and the uniformity adjusting coil component of installation in the preset position of discharge cavity, the power adjustment of plane coil and / or cylindrical coil in the uniformity adjusting coil component is realized, finally realizes the adjustment of plasma density distribution in the discharge cavity, and further optimization (for example, make plane coil and / or cylindrical coil to be non-centrosymmetric arrangement or to be centrosymmetric arrangement) to the arrangement of plane coil and / or cylindrical coil in installation position can also be carried out, further accurate re-optimization adjustment to the plasma density distribution in the discharge cavity can also be carried out, to achieve the expected plasma density distribution in the discharge cavity, so as to realize the uniformity adjustment of ion beam etching.

The present application provides a method for improving the etching cavity rate uniformity, an upper electrode disc and an etching device to solve the existing problem of poor in-plane uniformity caused by the flat upper electrode, that is, the etching rate is fast at the edge and slow in the middle. The improvement method comprises: providing an upper electrode disc, and configuring the bottom surface of the upper electrode disc towards the wafer side as a non-planar curved surface topography; installing the upper electrode disc in the etching cavity; in the etching process, the non-planar curved surface topography is used to regulate the plasma density distribution in the etching cavity. By using the topography to reshape the spatial radio frequency electric field distribution, the etching rate difference between the wafer edge and the center can be balanced, so that the plasma is uniformly distributed on the wafer surface, thereby greatly improving the in-plane uniformity and process stability.

Disclosed is a substrate processing apparatus that controls plasma density distribution using an electromagnet unit. The substrate processing apparatus controls magnetic field intensity and distribution using a variable core, controls a magnetic field formed on a substrate during substrate processing operation based on a magnetic field profile constructed in advance through a first magnetic field measurement sensor and a second magnetic field measurement sensor, and diagnoses the state of the electromagnet unit.

In order to solve not only the problem of in-plane uniformity of etching processing but also the problem of reducing charging damage and perform plasma density distribution control with a high degree of freedom, a plasma processing device is provided with a plasma processing chamber for performing plasma processing on a substrate, and is provided with: a vacuum cavity capable of exhausting the interior of the plasma processing chamber into a vacuum; and a microwave power supply unit having a microwave source and a circular waveguide and supplying microwave power oscillating from the microwave source to the vacuum cavity via the circular waveguide. In the plasma processing device, the microwave power supply unit is composed of a plurality of waveguides arranged between the circular waveguide and the vacuum cavity, which are coaxially arranged with the circular waveguide and have different dielectric constants inside.