11 results about "Plasma density distribution" patented technology

The invention discloses a density distribution device capable of stably generating special plasmas and an adjusting method, and can efficiently and stably provide a special gas channel of which the front part gas slowly rises and the rear edge outlet is provided with a steep density gradient falling edge. The invention relates to a gas medium channel with special plasma density structure distribution, which is used for a high-brightness laser plasma wake wave field acceleration to generate an ultrafast electron beam source and an application field of the ultrafast electron beam source. The device effectively overcomes the defects of uncontrollability, insufficient precision, short service life, complicated operation and the like in the process of producing gas channels by traditional capillary tubes, open gas pools and the like and preparing special structure density distribution such as steep falling edges, and has the advantages of simplicity in operation, convenience, high efficiency, high-precision adjustment, stable and controllable gas density distribution, electromagnetic interference resistance, durability and the like; and wide application of a high-brightness ultrafast electron beam source generated by a repetition-frequency laser tail wave field in frontier research fields such as ultrafast electron diffraction and ultrafast diagnosis is further promoted.

The invention relates to the technical field of semiconductor processing control, and provides an etching uniformity optimization method based on plasma density adjustment, which comprises the following steps of: 1, acquiring plasma density and etching rate, generating a coordinate system by taking the center of a wafer as an original point and partitioning along the radial direction, mapping the plasma density and the etching rate to the coordinate system, obtaining a continuous space distribution function; 2, constructing a correlation model, and fitting the correlation model by adopting a nonlinear least square method to obtain a relationship between the plasma density and the etching uniformity; and step 3, constructing a multivariable prediction model, monitoring the plasma density in etching, and when the plasma density distribution exceeds a preset threshold value, feeding back and adjusting plasma density control parameters in real time by the multivariable prediction model. According to the method, the relation between the plasma density and the etching uniformity is quantified, then the plasma density space distribution is monitored to predict the etching uniformity, and the plasma distribution deviation is dynamically adjusted to improve the etching uniformity.

The invention discloses a coil device and vapor deposition equipment, and relates to the technical field of semiconductors. The coil device comprises a top plate and a first coil mechanism. The first coil mechanism comprises a first centering rotating assembly, a first mounting plate, a first coil and a first adjusting assembly, the first mounting plate is movably connected with the top plate through the first centering rotating assembly, the first centering rotating assembly is provided with a first rotating center, the first coil is mounted on the first mounting plate, and the first adjusting assembly is mounted on the top plate; the first adjusting assembly is connected with the first mounting plate and used for driving the first mounting plate to rotate around the first rotating center so as to adjust the inclination angle of the first coil. According to the coil device, the inclination angle of the coil can be rapidly adjusted, so that the inclination angle of a magnetic field is adjusted, plasma density distribution is improved, deposition uniformity is improved, and product quality is guaranteed.

The application discloses a wafer uniformity optimization method for an ICP chamber, comprising the following steps: S1, continuously monitoring accumulated radio frequency time, and judging the consumption of a focusing ring through the accumulated radio frequency time; when the accumulated radio frequency time exceeds a preset radio frequency time threshold, entering step S2; S2, for different etching process parameters, changing the power of the outer coil and the inner coil of the inductive coupling coil through adjusting the power distribution of the source radio frequency, so that the edge region and the center region of the wafer obtain different plasma density distribution, and the change of the plasma sheath layer of the edge region of the wafer caused by the consumption of the focusing ring is compensated. The application can autonomously adjust the I / O power distribution set by the process menu, compensate the change of the plasma sheath layer distribution and morphology of the edge region of the wafer caused by the consumption of the focusing ring, and maintain the uniformity stability.

This improves the controllability of the plasma density distribution generated inside the chamber. [Solution] The plasma processing apparatus comprises a chamber containing a plasma generation space U, an annular outer emission section positioned above the chamber, and a resonator that supplies electromagnetic waves to the outer emission section. The resonator has a waveguide through which electromagnetic waves generated based on high-frequency power supplied by a high-frequency power supply propagate, and a plurality of outer slots that electromagnetically couple the waveguide and the outer emission section together. The plurality of outer slots consist of a plurality of partial grooves extending along the circumferential direction of the outer emission section above the outer emission section. A switching mechanism is provided for changing the impedance of each of the plurality of outer slots. A coaxial tube is provided between the switching mechanism and the corresponding outer slot, and the switching mechanism is attached to the end of the coaxial tube opposite to the corresponding outer slot.

The invention discloses a multi-target deposition control method and system, a medium and equipment. The multi-target deposition control method comprises the following steps: acquiring angle parameters between a substrate and a plurality of targets; environmental parameters in the cavity are adjusted to meet preset standards; based on the angle parameters and a preset control strategy, electric fields are applied to the multiple target positions respectively, a uniform composite electric field is formed through superposition, and the substrate is located in the composite electric field; the target position is deposited on the substrate through the electric field to form a film material, and control parameters of the electric field are adjusted based on thickness parameters of the film material until deposition is completed; a plurality of non-parallel target positions are arranged on the outer side of a substrate, an electric field is applied to each target position, a composite electric field with uniform strength is formed at the position of the substrate, and plasma density distribution is uniform, so that the sputtering rate and direction of a target material on the target positions tend to be consistent on the surface of the whole substrate, and the uniformity of film material thickness preparation is ensured; and the electric field is uniformly distributed, so that the target material is uniformly etched, and the utilization rate can be increased from 40-50% to 60-70%.

The invention relates to the technical field of semiconductor equipment, in particular to a feed-in structure and semiconductor processing equipment, and the feed-in structure comprises an upper electrode assembly, an electrode leading-out column, a conductive sealing layer, a gas homogenizing insulating layer and an electrical connection layer; the upper electrode assembly comprises at least two electrode structures separated by an insulating structure; the plurality of electrode leading-out columns are respectively connected with the at least two electrode structures; the conductive sealing layer is used for vacuum sealing; the uniform gas insulating layer is used for distributing process gas and performing electrical isolation; the electrical connection layer is used for being connected with an external radio frequency power supply so as to independently apply radio frequency power to the at least two electrode structures, radial distribution of plasmas in the reaction cavity can be actively adjusted by partitioning the upper electrode and independently controlling the radio frequency power of each region, and the uniform gas insulation layer ensures that gas uniformly enters the reaction cavity. The conductive sealing layer realizes electric signal transmission while keeping vacuum, so that active and real-time control of plasma density distribution is realized, and the uniformity of thin film deposition is improved.

The invention relates to a substrate processing apparatus and a plasma density control method, and more specifically provides a technology capable of controlling plasma density distribution by applying a geometric structure of a shielding baffle plate as a plasma adjusting medium parameter in the substrate processing apparatus. An embodiment of a substrate processing apparatus includes: a cavity providing a process space; a substrate support unit provided in the process space, on which a substrate is placed and which supports the substrate, the substrate support unit including an edge ring attached to an outer contour of the substrate; a shutter unit disposed on the periphery of the substrate supporting unit and including an upper shutter provided with a vent hole and capable of rising and falling, a lower shutter positioned below the upper shutter, and an upper shutter raising and falling portion for raising and falling the upper shutter; and a control unit for adjusting the plasma density distribution by applying the exhaust hole of the upper baffle plate and the height caused by the lifting of the upper baffle plate as a plasma adjustment medium parameter.

The application provides a kind of ion beam etching uniformity adjusting device and method, by uniformity adjusting capacitor component and the uniformity adjusting coil component of installation in the preset position of discharge cavity, the power adjustment of plane coil and / or cylindrical coil in the uniformity adjusting coil component is realized, finally realizes the adjustment of plasma density distribution in the discharge cavity, and further optimization (for example, make plane coil and / or cylindrical coil to be non-centrosymmetric arrangement or to be centrosymmetric arrangement) to the arrangement of plane coil and / or cylindrical coil in installation position can also be carried out, further accurate re-optimization adjustment to the plasma density distribution in the discharge cavity can also be carried out, to achieve the expected plasma density distribution in the discharge cavity, so as to realize the uniformity adjustment of ion beam etching.

The present application provides a method for improving the etching cavity rate uniformity, an upper electrode disc and an etching device to solve the existing problem of poor in-plane uniformity caused by the flat upper electrode, that is, the etching rate is fast at the edge and slow in the middle. The improvement method comprises: providing an upper electrode disc, and configuring the bottom surface of the upper electrode disc towards the wafer side as a non-planar curved surface topography; installing the upper electrode disc in the etching cavity; in the etching process, the non-planar curved surface topography is used to regulate the plasma density distribution in the etching cavity. By using the topography to reshape the spatial radio frequency electric field distribution, the etching rate difference between the wafer edge and the center can be balanced, so that the plasma is uniformly distributed on the wafer surface, thereby greatly improving the in-plane uniformity and process stability.

Disclosed is a substrate processing apparatus that controls plasma density distribution using an electromagnet unit. The substrate processing apparatus controls magnetic field intensity and distribution using a variable core, controls a magnetic field formed on a substrate during substrate processing operation based on a magnetic field profile constructed in advance through a first magnetic field measurement sensor and a second magnetic field measurement sensor, and diagnoses the state of the electromagnet unit.