The present invention provides an inductive couple
plasma processing device capable of obtaining a uniform
plasma distribution even to a large substrate. The inductive couple
plasma is provided with a high-frequency antenna 13 separated by a
dielectric wall 2 in the upper side of a
processing chamber 4, and the high-frequency antenna 13 comprises an external side antenna part 13a mainly forming an induced field in the external side part, an internal side antenna part 13b mainly forming an induced field in the internal side part, and a middle antenna part 13c for forming an induced field between the external side part and the internal side part, and variable capacitors 21a, 21c for controlling the
plasma density distribution of a inductive couple plasma are respectively connected with the external side antenna part 13a and the middle antenna part 13c. Each antenna part forms a
helical multiple-antenna, furthermore, in the configuration area, a winding method is set according to a mode of forming a uniform
electric field, and the winding number is set according to a mode of realizing uniformization of the
electric field in the configuration area of each antenna.