Inductance coupling plasma processing device and plasma processing method

Abstract

The invention provides an inductance coupling plasma processing device, which can control plasma density of high precision, without replacing aerial, increasing the device price and electric power cost. A HF antenna (13) is installed by dielectric wall (2) above the processing chamber (4) and the said HF antenna comprises an outside aerial part (13a) forming induction field on the lateral part through applying the electric power of high frequency in the processing chamber (4) and inside aerial part (13b) forming induction field on the medial part and the variable capacitor (21) is connected with one side of the outside aerial part (13a) and the inside aerial part (13b). The current value of the outside aerial part (13a) and the inside aerial part (13b)is controlled through adjusting the capacitivity of the variable capacitor (21) and the plasma density distribution of the inductance coupling plasma formed in the processing chamber (4) is also controlled.

Description

technical field [0001] The present invention relates to an inductively coupled plasma processing apparatus and a plasma processing method for performing plasma processing on substrates such as glass substrates for manufacturing flat panel displays (FPD) such as liquid crystal display devices (LCD). Background technique [0002] In the manufacturing process of a liquid crystal display device (LCD) etc., in order to apply predetermined processing to a glass substrate, various plasma processing apparatuses, such as a plasma etching apparatus and a plasma CVD film-forming apparatus, can be used. Conventionally, a capacitively coupled plasma processing apparatus has been used as such a plasma processing apparatus. However, recently, an inductively coupled plasma (ICP) processing apparatus has the great advantage that high-density plasma can be obtained in a high degree of vacuum. is getting people's attention. [0003] In the case of an inductively coupled plasma processing appa...

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Problems solved by technology

[0008] However, in the technique described in Patent Document 1, two high-frequency power supplies or power distribution circuits, namely a high-frequency power supply for the inner part of the helical antenna and a high-frequency power supply for the outer part, need to be provided, which increases the size of the device and reduces the size of the device. cost increase

In addition, in this case, the power loss increases, and the power cost increases, and it is difficult to control the plasma density distribution with high precision.

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