Plasma processing apparatus and plasma processing method

a processing apparatus and plasma technology, applied in the field of plasma processing apparatus and plasma processing method, can solve the problems of unbalanced plasma density distribution, unbalanced plasma distribution, electrode or plasma distribution on the target object, etc., to improve the uniformity of process characteristics, improve performance and the degree of freedom, and improve the effect of plasma density distribution

Inactive Publication Date: 2010-09-30
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0028]As described above, in accordance with the plasma processing apparatus of the present disclosure, it is possible to improve uniformity of plasma density distribution by greatly improving performance and the degree of freedom for controlling the plasma density d

Problems solved by technology

In this case, the plasma distribution on the high frequency electrode or the plasma distribution on the target object has an unbalance around a position

Method used

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  • Plasma processing apparatus and plasma processing method
  • Plasma processing apparatus and plasma processing method
  • Plasma processing apparatus and plasma processing method

Examples

Experimental program
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first embodiment

[0086]The plasma density distribution controller 72 in accordance with a first embodiment includes a conductive plate (first conductor) 74 which is placed substantially parallel (horizontally) under the rear surface of the susceptor 12 at a certain position to face the susceptor 12 and a conductive rod (second conductor) 76 which supports the conductive plate 74 upward and is electrically grounded. Both the conductive plate 74 and the conductive rod 76 are made of conductive metal such as copper or aluminum.

[0087]To be more specific, the conductive plate 74 is extended in a circular arc shape along a circumference direction of the power feed rod 32 or along an inner wall of the cylindrical insulating member 14, and is distanced from the rear surface of the susceptor 12 at a certain distance d. The conductive rod 76 is uprightly extended from the conductive plate 74. An upper end (first connecting portion) of the conductive rod 76 is fixed to a certain portion of a bottom surface of ...

second embodiment

[0112]In a second embodiment which is characteristically or developmentally modified from the layout of FIG. 9 in the first embodiment, a plurality of pairs of conductive rods 76(1), 76(2), . . . can be equi-spaced around a circumference (about 360°) in an azimuthal direction.

[0113]For example, in case of a three-pair type as illustrated in FIG. 10, three conductive rods 76(1), 76(2), and 76(3) are equi-spaced at about 120° around the power feed rod 32. In case of a four-pair type as illustrated in FIG. 11, four conductive rods 76(1), 76(2), 76(3), and 76(4) are equi-spaced at about 90° around the power feed rod 32.

[0114]FIG. 12 shows etching rate distribution obtained by the plasma etching apparatus (second embodiment apparatus) shown in FIG. 1 including the plasma density distribution controller 72 (three-pair type of FIG. 10) in accordance with the second embodiment in the first experimental example (recipe A) as compared to etching rate distribution obtained by the comparative e...

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Abstract

Uniformity of plasma density distribution and process characteristics is improved by greatly improving performance and the degree of freedom for controlling the plasma density distribution. A capacitively coupled plasma processing apparatus includes a plasma density distribution controller, installed in a chamber lower room, for controlling plasma density distribution on a susceptor. The plasma density distribution controller includes a conductive plate (first conductor) which is placed under a rear surface of the susceptor at a certain position to face the susceptor and a conductive rod (second conductor) which supports the conductive plate upward and is electrically grounded. An upper end (first connecting portion) of the conductive rod is fixed to a certain portion of a bottom surface of the conductive plate, and a lower end (second connecting portion) of the conductive rod is fixed to or is in contact with a bottom wall of a chamber.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Japanese Patent Application No. 2009-082567 filed on Mar. 30, 2009 and U.S. Provisional Application Ser. No. 61 / 186,912 filed on Jun. 15, 2009, the entire disclosures of which are incorporated herein by reference.FIELD OF THE INVENTION[0002]The present disclosure relates to a technique of performing a plasma process on a target object within a processing chamber including a high-frequency electrode. In particular, the present disclosure relates to a capacitively coupled plasma processing apparatus and a plasma processing method for generating plasma by a high-frequency discharge generated by applying a high frequency power to a high-frequency electrode.BACKGROUND OF THE INVENTION[0003]In a microprocessing or a processing such as etching, deposition, oxidation, and sputtering for manufacturing a semiconductor device or a FPD (Flat Panel Display), there has been used plasma so as to make a favorable rea...

Claims

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Application Information

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IPC IPC(8): H01L21/3065H05H1/24C23F1/02H01L21/67C03C15/00
CPCH01J37/32091H01J37/32541H01J37/32623H01J37/32697H01J37/3255
Inventor YAMAZAWA, YOHEIOKUNISHI, NAOHIKOMISAWA, HIRONOBUSOETA, HIDEHITO
Owner TOKYO ELECTRON LTD
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