Plasma processing apparatus and plasma processing method

Abstract

Uniformity of plasma density distribution and process characteristics is improved by greatly improving performance and the degree of freedom for controlling the plasma density distribution. A capacitively coupled plasma processing apparatus includes a plasma density distribution controller, installed in a chamber lower room, for controlling plasma density distribution on a susceptor. The plasma density distribution controller includes a conductive plate (first conductor) which is placed under a rear surface of the susceptor at a certain position to face the susceptor and a conductive rod (second conductor) which supports the conductive plate upward and is electrically grounded. An upper end (first connecting portion) of the conductive rod is fixed to a certain portion of a bottom surface of the conductive plate, and a lower end (second connecting portion) of the conductive rod is fixed to or is in contact with a bottom wall of a chamber.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Japanese Patent Application No. 2009-082567 filed on Mar. 30, 2009 and U.S. Provisional Application Ser. No. 61 / 186,912 filed on Jun. 15, 2009, the entire disclosures of which are incorporated herein by reference.FIELD OF THE INVENTION[0002]The present disclosure relates to a technique of performing a plasma process on a target object within a processing chamber including a high-frequency electrode. In particular, the present disclosure relates to a capacitively coupled plasma processing apparatus and a plasma processing method for generating plasma by a high-frequency discharge generated by applying a high frequency power to a high-frequency electrode.BACKGROUND OF THE INVENTION[0003]In a microprocessing or a processing such as etching, deposition, oxidation, and sputtering for manufacturing a semiconductor device or a FPD (Flat Panel Display), there has been used plasma so as to make a favorable rea...

AI Technical Summary

Benefits of technology

[0011]In order to solve the conventional problems described above, the present disclosure provides a plasma processing apparatus and a plasma processing method capable of improving uniformity of plasma density distribution and process characteristics by greatly improving performance and the degree of freedom for controlling the plasma density distribution.

[0022]When the second conductor is rotated at a constant speed in the azimuthal direction of the high frequency electrode during the plasma process, it is possible to achieve uniformity in distribution of sheath electric field intensity, distribution of plasma density or process characteristics in its diametrical direction as well as in the azimuthal direction.

[0028]As described above, in accordance with the plasma processing apparatus of the present disclosure, it is possible to improve uniformity of plasma density distribution by greatly improving performance and the degree of freedom for controlling the plasma density distribution by the above-described configurations and operations. Further, in accordance with the plasma processing method of the present disclosure, it is possible to improve uniformity of process characteristics by the above-described configurations and operations.

Problems solved by technology

In this case, the plasma distribution on the high frequency electrode or the plasma distribution on the target object has an unbalance around a position starting from a position of the first connecting portion of the first conductor in a two-dimensional direction (particularly, in an azimuthal direction).

Images