Plasma processing apparatus and plasma processing method

a plasma processing apparatus and plasma technology, applied in the field of plasma processing apparatus, can solve the problem that no reactance device may be connected to the inner coil, and achieve the effect of effective and easy control of plasma density distribution, low plasma density, and expansion of the freedom degree of plasma density distribution control on the substra
US20120248066A1Inactive Publication Date: 2012-10-04TOKYO ELECTRON LTD
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
TOKYO ELECTRON LTD
Publication Date
2012-10-04
Estimated Expiration
Not applicable · inactive patent

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Abstract

An inductively coupled plasma process can effectively and properly control plasma density distribution within donut-shaped plasma in a processing chamber is provided. In an inductively coupled plasma processing apparatus, a RF antenna 54 disposed above a dielectric window 52 is segmented in a diametrical direction into an inner coil 58, an intermediate coil 60, and an outer coil 62 in order to generate inductively coupled plasma. Between a first node NA and a second node NB provided in high frequency transmission lines of the high frequency power supply unit 66, a variable intermediate capacitor 86 and a variable outer capacitor 88 are electrically connected in series to the intermediate coil 60 and the outer coil 62, respectively, and no reactance device is connected to the inner coil 58.
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Description

CROSS-REFERENCE TO RELATED APPLICATION

[0001] This application claims the benefit of Japanese Patent Application No. 2011-072582 filed on Mar. 29, 2011 and U.S. Provisional Application No. 61 / 472,671 filed on Apr. 7, 2011, the entire disclosures of which are incorporated herein by reference.FIELD OF THE INVENTION

[0002] The present disclosure relates to a technique for performing a plasma process on a processing target substrate; and, more particularly, to an inductively coupled plasma processing apparatus and a plasma processing method.BACKGROUND OF THE INVENTION

[0003] In a manufacturing process of a semiconductor device or a FPD (Flat Panel Display), plasma is used to perform a process, such as etching, deposition, oxidation or sputtering, so as to perform a good reaction of a processing gas at a relatively low temperature. Conventionally, plasma generated by a high frequency electric discharge in MHz frequency band has been used in this kind of plasma process. The plasma generated by ...

Claims

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