Plasma processing apparatus and plasma processing method

Abstract

An inductively coupled plasma process can effectively and properly control plasma density distribution within donut-shaped plasma in a processing chamber is provided. In an inductively coupled plasma processing apparatus, a RF antenna 54 disposed above a dielectric window 52 is segmented in a diametrical direction into an inner coil 58, an intermediate coil 60, and an outer coil 62 in order to generate inductively coupled plasma. Between a first node NA and a second node NB provided in high frequency transmission lines of the high frequency power supply unit 66, a variable intermediate capacitor 86 and a variable outer capacitor 88 are electrically connected in series to the intermediate coil 60 and the outer coil 62, respectively, and no reactance device is connected to the inner coil 58.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Japanese Patent Application No. 2011-072582 filed on Mar. 29, 2011 and U.S. Provisional Application No. 61 / 472,671 filed on Apr. 7, 2011, the entire disclosures of which are incorporated herein by reference.FIELD OF THE INVENTION[0002]The present disclosure relates to a technique for performing a plasma process on a processing target substrate; and, more particularly, to an inductively coupled plasma processing apparatus and a plasma processing method.BACKGROUND OF THE INVENTION[0003]In a manufacturing process of a semiconductor device or a FPD (Flat Panel Display), plasma is used to perform a process, such as etching, deposition, oxidation or sputtering, so as to perform a good reaction of a processing gas at a relatively low temperature. Conventionally, plasma generated by a high frequency electric discharge in MHz frequency band has been used in this kind of plasma process. The plasma generated by ...

AI Technical Summary

Benefits of technology

The present invention provides an inductively coupled plasma processing apparatus and method that can effectively and easily control plasma density distribution in a diametrical direction. This allows for a proper plasma density distribution when a pressure is low or when a large diameter is needed. The apparatus includes an RF antenna with gaps between its inner and outer coils, which are electrically connected in parallel between a first node and a second node. A high frequency power supply unit is used to generate a high frequency electric discharge of the processing gas in the RF antenna. A fixed or semi-fixed inner inductor, a variable intermediate capacitor, and a variable outer capacitor may be provided between the first and second nodes to control plasma density distribution. The method includes segmenting the RF antenna and controlling the plasma density distribution by adjusting the electrodes. Overall, the invention provides a more effective and easy way to control plasma density distribution in a plasma processing apparatus.

Problems solved by technology

Moreover, no reactance device may be connected to the inner coil between the first node and the second node.

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