Plasma processing apparatus and plasma processing method

Abstract

An inductively coupled plasma process can effectively and properly control plasma density distribution within donut-shaped plasma in a processing chamber is provided. In an inductively coupled plasma processing apparatus, a RF antenna 54 disposed above a dielectric window 52 is segmented in a diametrical direction into an inner coil 58, an intermediate coil 60, and an outer coil 62 in order to generate inductively coupled plasma. Between a first node NA and a second node NB provided in high frequency transmission lines of the high frequency power supply unit 66, a variable intermediate capacitor 86 and a variable outer capacitor 88 are electrically connected in series to the intermediate coil 60 and the outer coil 62, respectively, and no reactance device is connected to the inner coil 58.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Japanese Patent Application No. 2011-072582 filed on Mar. 29, 2011 and U.S. Provisional Application No. 61 / 472,671 filed on Apr. 7, 2011, the entire disclosures of which are incorporated herein by reference.FIELD OF THE INVENTION[0002]The present disclosure relates to a technique for performing a plasma process on a processing target substrate; and, more particularly, to an inductively coupled plasma processing apparatus and a plasma processing method.BACKGROUND OF THE INVENTION[0003]In a manufacturing process of a semiconductor device or a FPD (Flat Panel Display), plasma is used to perform a process, such as etching, deposition, oxidation or sputtering, so as to perform a good reaction of a processing gas at a relatively low temperature. Conventionally, plasma generated by a high frequency electric discharge in MHz frequency band has been used in this kind of plasma process. The plasma generated by ...

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Benefits of technology

[0013]In view of the above, the present illustrative embodiments provide an inductively coupled plasma processing apparatus and a plasma processing method, which are capable of effectively and easily controlling plasma density distribution within donut-shaped plasma in a diametrical direction. Especially, it is possible to effectively and variously control the plasma density distribution in the diametrical direction to be a proper profile when a pressure is low or plasma of a large diameter is necessary.

[0019]When directions of the coil currents flowing in the inner coil, the intermediate coil, and the outer coil, respectively, are identical to the circumferential direction, the plasma density within the donut-shaped plasma has a maximum value at portions corresponding to the respective coils. In this case, by varying or adjusting electrostatic capacitances of the intermediate capacitor and the outer capacitor, an intermediate coil current flowing in the intermediate coil and an outer coil current flowing in the outer coil are varied with respect to an inner coil current flowing in the inner coil. In this manner, it is possible to control the plasma density distribution within the donut-shaped plasma, and furthermore, the plasma density distribution on the substrate.

[0023]When directions of the coil currents flowing in the inner coil, the intermediate coil, and the outer coil, respectively, are identical to the circumferential direction, the plasma density within the donut-shaped plasma has a maximum value at a portion corresponding to each of the coils. In this case, by varying or adjusting electrostatic capacitances of the intermediate capacitor and the inner capacitor, an intermediate coil current flowing in the intermediate coil and an inner coil current flowing in the inner coil, respectively, are varied with respect to an outer coil current flowing in the outer coil. In this manner, it is possible to control the plasma density distribution within the donut-shaped plasma, and furthermore, the plasma density distribution on the substrate.

[0024]Further, it is possible to flow the intermediate coil current in a direction opposite to the other coil currents by adjusting the electrostatic capacitance of the intermediate capacitor. In this case, it is possible to locally lower the plasma density at a portion in the donut-shaped plasma, corresponding to the intermediate coil or the outer coil. Furthermore, a freedom degree of the plasma density distribution control on the substrate can be expanded.

[0025]In accordance with the plasma processing apparatus or the plasma processing method of the illustrative embodiment, it is possible to effectively and easily control the plasma density distribution within the donut-shaped plasma, with the above-described configuration and operation. Especially, it is possible to effectively and variously control the plasma density distribution in the diametrical direction to have a proper profile when a pressure is low or plasma of a large diameter is necessary.

Problems solved by technology

Moreover, no reactance device may be connected to the inner coil between the first node and the second node.

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