Microwave plasma source and plasma processing apparatus

Abstract

There are provided a microwave plasma source and a plasma processing apparatus capable of improving uniformity of a plasma density distribution within a processing chamber by controlling positions of nodes and antinodes of a standing wave of microwave within the processing chamber not to be fixed. The microwave plasma source 2 includes a microwave supply unit 40. The microwave supply unit 40 includes multiple microwave introducing devices 43 each introducing microwave into the processing chamber; and multiple phase controllers 46 for adjusting phases of the microwaves inputted to the microwave introducing devices 43. Here, the phases of the microwaves inputted to the microwave introducing devices 43 are adjusted by fixing an input phase of the microwave inputted to one of two adjacent microwave introducing devices 43 while varying an input phase of the microwave inputted to the other microwave introducing device 43 according to a periodic waveform.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Japanese Patent Application No. 2010-234688 filed on Oct. 19, 2010, the entire disclosures of which are incorporated herein by reference in their entirety.FIELD OF THE INVENTION[0002]The present disclosure relates to a microwave plasma source and a plasma processing apparatus using the same.BACKGROUND OF THE INVENTION[0003]In a manufacturing process of a semiconductor device or a liquid crystal display, a plasma processing apparatus such as a plasma etching apparatus or a plasma CVD apparatus has been used for performing a plasma process such as an etching process or a film forming process on a processing target substrate such as a semiconductor wafer or a glass substrate.[0004]Recently, as such a plasma processing apparatus, a RLSA (Radial Line Slot Antenna) microwave plasma processing apparatus capable of uniformly generating high-density surface wave plasma having a low electron temperature is attr...

AI Technical Summary

Benefits of technology

[0012]In view of the foregoing, the present disclosure provides a microwave plasma source capable of controlling positions of nodes and antinodes of a standing wave of microwave within the processing chamber not to be fixed and improving uniformity of a plasma density distribution within the processing chamber. Further, the present disclosure also provides a plasma processing apparatus using the microwave plasma source.

[0017]In accordance with the present disclosure, the phases of the microwaves may be adjusted by fixing the input phase of the microwave inputted to one of two adjacent microwave introducing devices while varying the input phase of the microwave inputted to the other microwave introducing device according to the periodic waveform. Alternatively, the phases of the microwaves may be adjusted by varying input phases of the microwaves inputted to both of the two adjacent microwave introducing devices according to periodic waveforms not overlapped with each other. Accordingly, by continuously changing the positions of the nodes and the antinodes of the standing wave generated when the microwaves are radiated into the processing chamber, it may be possible to uniformize electric field intensity and to improve in-plane uniformity of the electric field intensity. As a result, an electron density, i.e., a plasma density within the processing chamber can be uniformized, and a uniform plasma process can be performed.

Problems solved by technology

In this case, processes become more complicated.

The antinodes and the nodes of the standing wave may cause non-uniformity of an electron density distribution in the plasma.

As a result, a plasma density distribution may not become uniformized.

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