Plasma processing apparatus, plasma processing method and storage medium

Abstract

A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.

Description

FIELD OF THE INVENTION[0001]The present invention relates to a technique for performing plasma processing on a target object; and, more particularly, to a capacitively coupled plasma processing apparatus, a plasma processing method and a storage medium storing a control program for executing the plasma processing method.BACKGROUND OF THE INVENTION[0002]In a manufacturing process of a semiconductor device or an FPD (flat panel display), a plasma is often used in processes, e.g., etching, deposition, oxidation, sputtering and the like, in order to allow a processing gas to react efficiently at a relatively low temperature. Conventionally, a capacitively coupled plasma processing apparatus is mainly used for a single-wafer plasma processing apparatus, especially a single-wafer plasma etching apparatus.[0003]Generally, in the capacitively coupled plasma processing apparatus, an upper and a lower electrode are disposed in parallel with each other in a processing chamber as a vacuum chamb...

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Benefits of technology

[0010]In view of the above, the present invention provides a plasma processing apparatus, method and a storage medium storing a control program for executing the plasma processing method for effectively preventing charging damage and improving stability and reliability of plasma processing and for enhancing the in-plane uniformity in the plasma processing.

Problems solved by technology

In general, the charging damage (dielectric breakdown) in the plasma processing depends on the amount of charges introduced or accumulated in the target object from the plasma and an insulating film is deteriorated or destroyed exponentially when the amount of the introduced or accumulated charges exceeds a threshold value.

In addition, the charge-up of the insulating film occurs due to unbalance between ions and electrons injected or introduced into the target object, thereby producing a local electric field.

Further, when the amount of charges exceeds the threshold value, the insulating film is damaged or destroyed.

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