Inductive couple plasma processing device

Abstract

The present invention provides an inductive couple plasma processing device capable of obtaining a uniform plasma distribution even to a large substrate. The inductive couple plasma is provided with a high-frequency antenna 13 separated by a dielectric wall 2 in the upper side of a processing chamber 4, and the high-frequency antenna 13 comprises an external side antenna part 13a mainly forming an induced field in the external side part, an internal side antenna part 13b mainly forming an induced field in the internal side part, and a middle antenna part 13c for forming an induced field between the external side part and the internal side part, and variable capacitors 21a, 21c for controlling the plasma density distribution of a inductive couple plasma are respectively connected with the external side antenna part 13a and the middle antenna part 13c. Each antenna part forms a helical multiple-antenna, furthermore, in the configuration area, a winding method is set according to a mode of forming a uniform electric field, and the winding number is set according to a mode of realizing uniformization of the electric field in the configuration area of each antenna.

Description

technical field [0001] The present invention relates to an inductively coupled plasma processing apparatus for performing plasma processing on an object to be processed, such as a substrate for manufacturing a flat panel display (FPD) such as a liquid crystal display (LCD). Background technique [0002] In the manufacturing process of a liquid crystal display device (LCD) etc., various plasma processing apparatuses, such as a plasma etching apparatus and a plasma CVD film formation apparatus, are used in order to apply predetermined processing to a glass substrate. As such a plasma processing apparatus, a capacitively coupled plasma processing apparatus has been frequently used in the past, but recently, an inductively coupled plasma (ICP) processing apparatus having the great advantage of being able to obtain high-vacuum and high-density plasma has become available. Having attention. [0003] In an inductively coupled plasma processing apparatus, a high-frequency antenna i...

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Problems solved by technology

However, when the size of one side of the substrate is larger than 1 meter, the diffusion effect cannot be fully exerted, so the sparse and dense distribution of the antenna pattern tends to be reflected, so the plasma distribution tends to deteriorate.

Furthermore, if the substrate is enlarged in this way, the distribution of electric field intensity will vary in the area where the antenna is placed, so the distribution of plasma will become uneven.

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