77 results about "Rf discharge" patented technology

A plurality of electrode bars are arranged in parallel with each other, and side electrode bars are connected to the corresponding opposite ends of the electrode bars, thereby forming a ladder-like RF discharge electrode. Power supply points are arranged axisymmetrically with respect to a reference line, which is a bisector which bisects one side of the RF discharge electrode, while being spaced a predetermined distance from the reference line, thereby suppressing voltage distribution on the ladder electrode, which has an effect on uniformity of discharge distribution, to a sufficiently low level of nonuniformity. Thus, uniform distribution of film deposition rate can be obtained, thereby enabling uniform deposition even in large-area applications.

A plasma processing apparatus includes a processing gas supplying unit for supplying a desired processing gas to a processing space between an upper electrode and a lower electrode which are disposed facing each other in an evacuable processing chamber. The plasma processing apparatus further includes a radio frequency (RF) power supply unit for applying an RF power to one of the lower and the upper electrode to generate plasma of the processing gas by RF discharge and an electrically conductive RF ground member which covers a periphery portion of the electrode to which the RF power is applied to receive RF power emitted outwardly in radial directions from the periphery portion of the electrode to which the RF power is applied and send the received RF power to a ground line.

A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

A method of biolization to the surface of inorganic material includes the following steps: the surface is spattered to form a tantalum oxide or a titanium oxide thin film; and then the inorganic material is put in a plasma immersion ion implantation device; after vacuumization, hydrogen, water vapour or ammonia is fed in, with gas pressure 0.05 to 50 Pa; the radio frequency discharge power is 200 to 1200W; the range value of the loaded pulse high-voltage power is 1KV to 100KV, the frequency is 50 to 40000HZ, and the duty ratio is 3 percent to 80 percent; the heating temperature is 20 to 500 DEG C; the treatment time is 0.1 to 5 hours; finally, the inorganic material is put into 10 to 100mg / mL albumin or heparin solution to be soaked for 2 to 48 hours under 20 to 40 DEG C soaking temperature. The method does not damage the activity of the biomolecule and the protein; the prepared inorganic material with biolized surface has good anti-coagulability, is used for medical blood vessel scaffolds and artificial heart valves, and can greatly improve the product performance.

A high velocity cold plasma array generator of atmosphere radio frequency discharge consists of cylindrical shell and generator array formed by multiple single coaxial type of cold plasma generator .It featured as building generator array in cylindrical shell, setting a switching in hole of radio frequency power supply and inlet of cold plasma operation air on said shell, connecting internal electrodes of said generator to radio frequency power supply after they are parallel-connected and external electrodes to earthing after they are parallel-connected ,setting side director or axial direction operation air inlet on said generator and setting a cooling media inlet and outlet on said shell .

A processing apparatus includes counters each used to measure the length of RF discharge time over which power is applied to a consumable component in correspondence to a specific type of processing executed in a processing chamber, a storage to store wear coefficient information indicating wear coefficients each corresponding to one of the plurality of types of processing, and a control unit that obtains information indicating RF discharge time lengths measured by the counters in correspondence to the individual types of processing, obtains the wear coefficients corresponding to the individual types of processing indicated in the wear coefficient information stored in the storage, calculates a wear index value for the consumable component based upon the RF discharge time lengths and the wear coefficients corresponding to the individual types of processing, and executes consumable component management processing based upon the calculated wear index value.

The invention provides a radio-frequency (RF) power supply device provided with a multi-way output synchronizing signal source, power amplifiers, matchers and discharging electrodes. The output of each matcher is connected and matched with the discharging electrode; the input of each matcher is connected and matched with the output of the power amplifier; the outputs of the multi-way output synchronizing signal source are synchronously amplified by a plurality of ways of power amplifiers under the power supply action of a direct current power source; the RF discharge of a plurality of ways ofdischarging electrodes to gas is carried out under the joint action of a plurality of ways of matchers so that the gas in a plurality of ways of discharging electrodes generates glow. The gas producesplasma, generates laser in a laser resonant cavity and adopts a radio RF motivation mode; the RF electrodes are arranged outside the resonant cavity without contacting with the discharged gas; the RFis from 10 thousand to 3 million MHz; and ionization and discharge are carried out by the isolation of the gas in a glass motivation cavity so as to avoid polluting the resonant cavity and optical devices by the sputtering and the erosion of the electrodes.

The invention relates to an ionization source, in particular to a composite ionization source which comprises a VUV single-photon ionization source based on radio-frequency voltage discharge and a chemical ionization source obtained by utilizing photoelectron ionization reagent gas in the photoelectric effect. The composite ionization source comprises a radio-frequency VUV source, an ion transmission optical system and an ion source cavity. An ion repulsing electrode, an ion focusing electrode and a difference interface electrode plate are sequentially arranged in the VUV source emergent direction of radio-frequency discharge, the three electrodes are all round sheet electrodes with round holes in the centers, and the three electrodes are spaced through insulation pads and are coaxially arranged in parallel. The VUV light beam of the radio-frequency voltage discharge and coaxial light beams of all the round sheet electrodes penetrate through the center holes of all the electrodes in the axis direction, and finally the beams are irradiated on the surface of the difference interface electrode plate. Chemical ionization is acted on the photoelectrons after reagent gas is added. Soft ionization of sample molecules with ionization energy higher than the photon energy is achieved, the range of analyzable samples is enlarged, and the detection sensitivity of instruments is improved.

The invention discloses a device for common voltage high voltage radio cooperation radio frequency glow jet discharge and a discharge method. The device comprises a discharge tube body; a first group electrode, a common electrode, a second group electrode and a third group electrode are successively arranged on the discharge tube; and the first group electrode is connected to a high voltage source, the common electrode is connected to the ground and the second group electrode is connected to a radio frequency source. The discharge method comprises steps of introducing a reaction gas into the dielectric barrier to go into the discharge tube body from a gas inlet, utilizing high voltage to assist radio frequency to discharge to generate a plasma jet, discharging through high voltage dielectric barrier glowing, utilizing the electrons, ions and excited state particles in the generated plasma body to assist the radio frequency dielectric barrier glow to discharge and glow and to reduce the glow voltage of radio frequency discharge. The invention can discharge and glow through high voltage source electrode group, utilizes the generated plasma body to assist the common voltage radio frequency to discharge and glow and obtains the common voltage jet plasma body which is high in density, in activity and controllable in the gas temperature.

The invention discloses a metal organic chemical gas-phase sedimentary equipment transmitted by liquid, which comprises the following parts: multi-element gasifying component, reacting chamber, RF discharge plasmid, vacuum component, operational prevention and draining disposing component and electric control component, wherein the multi-element gasifying component is composed of multi-path liquid transmission channels, two-path gas transmission channel, atomizer, carburetor, valve and pipe; the liquid is atomized and carbureted, which is transmitted into reacting chamber to react with gas to produce needed oxide; the sediment forms film on the substrate, whose temperature is controllable; the electric control component realizes self-control of whole technology through programmable controller PLC.

An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.

The invention relates to a method for diagnosing a self-biased probe of a radio-frequency discharging plasma, belonging to the field of plasma science and technology. The method is characterized in that two probes, namely, a probe a and a probe b, are arranged in the plasma; the probe a is arranged in a floating state relative to the discharging circuit of the plasma; the probe b is connected with a discharging circuit ground by a blocking capacitor and a sampling capacitor. The voltage alternating-current component amplitude DeltaV between the probe a and the probe b, the first harmonic amplitude absolute value of i1Omega and the secondary harmonic amplitude absolute value of i2Omega of the current of the probe b can be measured; and the electronic temperature Te and the ion density ni can be calculated according to DeltaV, absolute value of i1Omega and absolute value of i2Omega. The method has the benefits of overcoming the influence of the insulating pollution of the probe surface and obtaining the parameters such as the ion density, electronic temperature and the like. The discharge disturbance on the plasma is small as the direct current or alternating-current bias voltage is not applied to the probe.

The invention relates to a diagnostic device of radio frequency discharge plasma, belonging to the plasma science and technology field and being used for diagnosing radio frequency discharge plasma. The diagnostic device can overcome radio frequency discharge especially radio frequency disturbance existed in the simultaneous discharge of three or more radio frequency and obtain parameters such as electron density, electron temperature and the like. The diagnostic device of radio frequency discharge plasma comprises a detector and a servo system, wherein the detector is composed of a metallic probe, a base electrode and a reference electrode; the base electrode is annular and arranged parallel to the equipotential surface of the discharge electric field of the place where the base electrode locates in; the probe is locate in the center of the annular base electrode; the reference electrode can locate in any position of the plasma; the surface area of the base electrode is 300 times larger than the surface area of the probe; and the servo system is composed of a computer, a data collection card, a sawtooth wave generator and an interface circuit; and the servo system does not share a power source with discharge equipment and does not share a land with discharge loop. Sawtooth wave scan voltage generated by a sawtooth wave generator is added between the probe and the base electrode. The potential of the probe is calculated with the potential of the reference electrode as reference.

The present invention discloses a device and a method for controlling radio frequency jet flow length through auxiliary discharge. The device is a dielectric barrier discharge plasma reactor and comprises a discharge cavity filled with discharge gases, one end of the discharge cavity is provided with an air inlet, the other end of the discharge cavity is provided with an air outlet, the dischargecavity is provided with a high-voltage electrode, a grounding electrode and a radio-frequency electrode in order in a gas flow direction. The method comprises the steps of: inletting the discharge gases into the discharge cavity through the air inlet, the radio-frequency electrode is connected with a radio-frequency alternating current to allow the discharge gases to generate plasma jet between the grounding electrode and the radio-frequency electrode, and the high-voltage electrode is connected with a high-voltage source to generate the plasma jet between the high-voltage electrode and grounding electrode. The device and the method for controlling radio frequency jet flow length through auxiliary discharge can effectively add the radio-frequency discharge intensity and the length of the radio frequency jet and can change the intensity of the pulse plasma so as to achieve change of the length of the radio frequency jet.

The invention discloses a radio-frequency micro-discharge long-scale plasma generating device and method. The radio-frequency micro-discharge long-scale plasma generating device comprises a quartz tube; one end of the quartz tube is sealed and connected with an air inlet vacuum chamber, and the other end of the quartz tube is sealed and connected with an air outlet vacuum chamber; a grounding electrode, a high-voltage electrode and a discharge coil are sequentially sleeved on the quartz tube in a direction from the air inlet vacuum chamber to the air outlet vacuum chamber; the high-voltage electrode is connected to the near-end of the discharge coil; the high-voltage electrode is connected to a radio-frequency power supply system through a coaxial transmission line; and the grounding electrode and the far-end of the discharge coil are connected to a common ground. The invention combines two discharge forms of a plate electrode and a discharge coil, and a discharge coil is added downstream of the high-voltage electrode; therefore, the stability and plasma spacing at medium and high atmospheric pressures during radio-frequency discharge are improved; so that the invention can realizethe generation and maintenance of the plasma with a long-scale and uniform axial direction discharge under a small airflow and a small radio-frequency power under medium and high atmospheric pressures.

An RF-discharge lamp stabilization system for preferred use in a Rubidium atomic clock, senses acoustic oscillations of plasma ions in the 20.0 kHz range to assess the performance of the lamp for determining radio frequency parameters of the lamp while the lamp is in operation and while the performance of an atomic clock is influenced by the plasma character, with lamp spectral outputs being actively stabilized for improved vapor-cell clock performance.

An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.

A remote plasma generator of a remote plasma-enhanced chemical vapor deposition (PECVD) system is revealed. A direct current (DC) discharge unit, a radiofrequency (RF) discharge unit and a microwave discharge unit are arranged at the remote plasma generator separately. Source materials or process gas introduced into the remote plasma generator are / is excited by synchronous discharging of the DC discharge unit, the RF discharge unit and the microwave discharge unit to generate a plasma source required. The efficiency in use and the efficiency in manufacturing process of the remote PECVD are improved.

A processing apparatus includes counters each used to measure the length of RF discharge time over which power is applied to a consumable component in correspondence to a specific type of processing executed in a processing chamber, a storage to store wear coefficient information indicating wear coefficients each corresponding to one of the plurality of types of processing, and a control unit that obtains information indicating RF discharge time lengths measured by the counters in correspondence to the individual types of processing, obtains the wear coefficients corresponding to the individual types of processing indicated in the wear coefficient information stored in the storage, calculates a wear index value for the consumable component based upon the RF discharge time lengths and the wear coefficients corresponding to the individual types of processing, and executes consumable component management processing based upon the calculated wear index value.

A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

Apparatus and process for controlling etching of silicon-based or organic materials on large rectangular substrates for manufacture of flat panel displays or other devices. The disclosed etching process can remove silicon-based materials or organic polymers with a rate distribution such that all areas of the panel are finished at nearly the same time. It does so while minimizing electrical charging of the workpiece that could cause damage to the devices. The etching chamber employs a parallel plate RF discharge between two electrodes, one of which is the showerhead for gas introduction and the other supports the substrate to be processed. Reactant and other gases are provided to the discharge by a novel showerhead structure. The gases which provide reactants for etching silicon-based materials include halogenated compounds. Oxygen, water vapor or hydrogen with other gas additives may be used for etching organic polymers. The uniformity of etching across the substrate is controlled by adding other gas(es), including inert diluents, which can control the etching rate for either silicon-based materials or organic materials by accelerating and / or decreasing it. In addition, the distribution of the gases which are added can be varied to make the surface potential of the substrate more uniform. With a showerhead having a single reservoir that feeds all gases into the discharge, the gases may be added to the reservoir through multiple distribution structures within or adjacent to the reservoir. These structures are each supplied separately with the additive gases and, in turn, feed them to the different regions of the reservoir. The invention can thus provide different etching rates for different parts of the substrate, as may be required to finish film removal in all areas of the panel at nearly the same time. The invention also provides for chemical conversion of inorganic residues remaining after the oxidation of an organic polymer in the ashing process by addition of small amounts of halogenated gas(es) to the mixture flowing through the plasma sources. With the system and process of the invention, space efficiency, operating cost and capital cost for making large substrates can be reduced significantly.

The invention discloses a bearing inner ring rolling way reinforcement treatment device. The device comprises a vacuum treatment chamber, a high-pressure target table, a rotating mechanism, a transmission mechanism, a plasma generator, a high-power high-voltage pulse power supply, an air supply system and a high-vacuum air extracting system. The invention further discloses a treatment method. The device forms one set of complete bearing inner ring rolling way ion injection treatment equipment. A radio frequency power supply builds radio-frequency discharge nitrogen, carbon and argon plasmas; and the high-power high-voltage pulse power supply provides negative-high-pressure pulse bias voltage to a treated inner ring rolling way to perform the ion injection or film deposition treatment. The bearing inner ring on a cooling jacket slowly rotates to obtain a more uniform injection quantity on the surface, so that the bearing inner ring rolling way obtains the more uniform injection quantity, and the reinforcement treatment effect is better.

A plasma processing apparatus includes a processing gas supplying unit for supplying a desired processing gas to a processing space between an upper electrode and a lower electrode which are disposed facing each other in an evacuable processing chamber. The plasma processing apparatus further includes a radio frequency (RF) power supply unit for applying an RF power to one of the lower and the upper electrode to generate plasma of the processing gas by RF discharge and an electrically conductive RF ground member which covers a peripheral portion of the electrode to which the RF power is applied to receive RF power emitted outwardly in radial directions from the periphery portion of the electrode to which the RF power is applied and send the received RF power to a ground line.

Systems and methods for starting and operating an electrodeless RF discharge ring laser gyro. In one example, an electrodeless RF discharge ring laser gyro system includes a ring laser gyro, a starting circuit, an RF power source, and a controller. The starting circuit is electrically connected to the ring laser gyro. The starting circuit applies an electrial pulse to the ring laser gyro. The RF power source is electrically connected to the ring laser gyro. The RF power source applies an operating power to the ring laser gyro. The controller is electrically connected to the RF power source and the starting circuit. The controller controls operation of the starting circuit and the RF power source.

The invention belongs to laser gyroscope technology, and relates to a laser gyroscope based on longitudinal radio frequency discharge. The laser gyroscope based on longitudinal radio frequency discharge includes a cavity, a reflector, a charging and exhausting electrode, and an aperture electrode, wherein, interconnected annular capillary holes are arranged in the cavity, and the charging and discharging electrodes are metal tubes , is arranged on the cavity and communicates with the annular capillary hole, and the diaphragm electrode is arranged opposite to the charging and exhausting electrode, and the central axes of the two are consistent. In addition, a section of the diaphragm electrode communicates with the annular capillary hole, and the aperture The small radial through hole acts as a stop to ensure the normal operation of the laser gyro in the fundamental transverse mode. The laser gyro based on longitudinal radio frequency discharge of the present invention provides laser gain by high voltage and low frequency radio frequency discharge, has small volume, simple structure, high discharge efficiency, and small electromagnetic radiation, effectively realizing the miniaturization of the laser gyro.

An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.

The present invention relates to a device and a method for controlling direct current bias voltage of a radio-frequency discharge system. The system comprises a direct current bias voltage detecting module, a mode selecting module, a direct current bias voltage controlling module and a radio-frequency power providing module, wherein the mode selecting module is used for receiving parameters and parameter types. If the parameter type is the type which represents voltage, then the direct current bias voltage controlling module computes a power value according to relevant characterization parameters of the voltage and a detected direct current value, and the radio-frequency power providing module provides power according to the computed power value. If the parameter type is the type which represents the power, then the radio-frequency power providing module provides the power according to the relevant characterization parameters of the power. When applying the proposal of the present invention, the mode selecting module can utilize a result which judges the types of the parameters to determine to carry out a power controlling method or a voltage controlling method, so that the two different direct current bias voltage controlling methods can be flexibly selected so as to achieve the compatible aim and be more favorable for the operation of process operators.

A material processing apparatus includes a vacuum chamber, an electrically grounded shield and / or workpiece, multiple radio frequency-powered electrodes within the vacuum chamber, magnets, and a gas inlet operable to flow a precursor gas to a plasma area located between the electrodes. In another aspect, magnets and spaced apart radio frequency-powered electrodes are operable to create a magnetic field and a radio frequency field within a plasma, which causes a plasma enhanced chemical vapor deposition of coating material onto a workpiece or substrate within a vacuum chamber.

The invention discloses a device and method for assisting the RF glow discharge of a flat plate by an atmospheric pressure pulse. The device is a plasma discharge reactor, which comprises a dischargechamber filled with a discharge gas; An air inlet is arranged at the top of the discharge chamber, an upper electrode connected with a high-voltage power source and a lower electrode connected with aradio frequency power source are arranged in the discharge chamber, a pair of dielectric plates distributed up and down are arranged between the upper electrode and the lower electrode, the upper dielectric plate is connected with the upper electrode, and the lower dielectric plate is connected with the lower electrode. The method comprises the following steps: the discharge gas is introduced intothe discharge chamber from the air inlet, and the upper electrode is connected with a pulse power supply to form pulse discharge; after the pulse discharge is finished, pulse modulated RF alternatingcurrent flows through the lower electrode so as to generate RF discharge between the dielectric plates. The invention utilizes the active particles generated in the pulse discharge to assist the radio frequency discharge to start glow, reduces the glow time and the maintenance voltage of the glow time.