Electrically and Magnetically Enhanced Ionized Physical Vapor Deposition Unbalanced Sputtering Source

Abstract

An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims the benefit of U.S. Provisional Application Ser. No. 62 / 270,356, filed Dec. 21, 2015, the disclosure of which is incorporated herein by reference in its entirety. U.S. application Ser. No. ______ entitled “Capacitive Coupled Plasma Source for Sputtering and Resputtering”, U.S. application Ser. No. ______ entitled “Magnetically Enhanced High Density Plasma-Chemical Vapor Deposition Plasma Source for Depositing Diamond and Diamond-Like Films”, and U.S. application Ser. No. ______ entitled “Magnetically Enhanced Low Temperature-High Density Plasma-Chemical Vapor Deposition Plasma Source for Depositing Diamond and Diamond Like Films” filed concurrently herewith are incorporated herein by reference in their entireties.BACKGROUND[0002]Field[0003]The disclosed embodiments generally relate to an ionized physical vapor deposition (I-PVD) apparatus and method for sputtering target material on a surface of a substrate. In par...

AI Technical Summary

Benefits of technology

The patent describes an electrically and magnetically enhanced unbalanced magnetron sputtering source that uses a cathode target assembly, an additional electrode assembly, a power supply, and a gap to generate a magnetron configuration on the cathode surface. The source has a unique magnetic field geometry that increases ionization of sputtered target material atoms and improves the efficiency of sputtering. The apparatus can be used in various applications such as vacuum deposition, substrate heating, and plasma generation. The technical effects of the patent include improved efficiency of sputtering, increased ionization of sputtered target material atoms, and improved magnetic field geometry for better control of the plasma.

Problems solved by technology

Magnetic field lines that form a magnetron configuration on the cathode target surface are unbalanced from the center.

In some embodiments, magnetic field lines are unbalanced from the edges.

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