Plasma processing apparatus

Abstract

A uniformity of plasma density in a target object surface and plasma processing characteristics can be improved. A plasma processing apparatus 10 includes: a processing chamber 100 in which a plasma process is performed on a wafer W; a first high frequency power supply 140 configured to output a high frequency power; a high frequency antenna 120 including an outer coil, an inner coil and n (n is an integer equal to or greater than 1) number of intermediate coil(s) that are concentrically wound about a central axis outside the processing chamber 100; and a dielectric window 105 provided at a part of a wall of the processing chamber 100 and configured to introduce electromagnetic field energy generated from the high frequency antenna 120 into the processing chamber 100.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Japanese Patent Application No. 2009-0086470 filed on Mar. 31, 2009, and U.S. Provisional Application Ser. No. 61 / 186,921 filed on Jun. 15, 2009, the entire disclosures of which are incorporated herein by reference.FIELD OF THE INVENTION[0002]The present disclosure relates to a plasma processing apparatus performing a plasma process on a target object; and, more particularly, to a high frequency antenna to be used therein.BACKGROUND OF THE INVENTION[0003]As examples of apparatuses that perform microprocessing on a target object by exciting plasma, there are a capacitively coupled plasma processing apparatus, an inductively coupled plasma (ICP) processing apparatus, a microwave plasma processing apparatus, and the like. Among them, the ICP processing apparatus includes a high frequency antenna installed at a dielectric window provided on a ceiling surface of a processing chamber. In such an ICP process...

AI Technical Summary

Benefits of technology

The present disclosure provides a plasma processing apparatus that improves the uniformity of plasma density and plasma processing characteristics in the target object surface. The apparatus includes a processing chamber in which a plasma process is performed, a first high frequency power supply, a high frequency antenna, and a dielectric window. The high frequency antenna includes an outer coil, an inner coil, and n intermediate coils that are concentrically wound about a central axis outside the processing chamber. This configuration allows for the generation of plasma in a plasma excitation region by the n intermediate coils, while avoiding a decrease in plasma density in an intermediate region between the outer and inner coils. The apparatus also includes a power splitter that splits high frequency power outputted from the first high frequency power supply at a desired ratio and supplies the split power to each coil. The power splitter can be movable to vary the distance from the dielectric window. The overall plasma uniformity can be achieved by controlling the ratio of power split by the power splitter based on the measured current, voltage, or phase of high frequency power. The apparatus can also include a second high frequency power supply and a power splitter to further improve plasma processing.

Problems solved by technology

As a result, plasma process uniformity in a target object surface deteriorates.

Besides, since the plasma density also varies depending on plasma conditions such as pressure or the like, it has been difficult to achieve plasma uniformity.

Therefore, it has been more difficult to achieve the plasma uniformity.

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