Plasma processing apparatus

Abstract

A uniformity of plasma density in a target object surface and plasma processing characteristics can be improved. A plasma processing apparatus 10 includes: a processing chamber 100 in which a plasma process is performed on a wafer W; a first high frequency power supply 140 configured to output a high frequency power; a high frequency antenna 120 including an outer coil, an inner coil and n (n is an integer equal to or greater than 1) number of intermediate coil(s) that are concentrically wound about a central axis outside the processing chamber 100; and a dielectric window 105 provided at a part of a wall of the processing chamber 100 and configured to introduce electromagnetic field energy generated from the high frequency antenna 120 into the processing chamber 100.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Japanese Patent Application No. 2009-0086470 filed on Mar. 31, 2009, and U.S. Provisional Application Ser. No. 61 / 186,921 filed on Jun. 15, 2009, the entire disclosures of which are incorporated herein by reference.FIELD OF THE INVENTION[0002]The present disclosure relates to a plasma processing apparatus performing a plasma process on a target object; and, more particularly, to a high frequency antenna to be used therein.BACKGROUND OF THE INVENTION[0003]As examples of apparatuses that perform microprocessing on a target object by exciting plasma, there are a capacitively coupled plasma processing apparatus, an inductively coupled plasma (ICP) processing apparatus, a microwave plasma processing apparatus, and the like. Among them, the ICP processing apparatus includes a high frequency antenna installed at a dielectric window provided on a ceiling surface of a processing chamber. In such an ICP process...

AI Technical Summary

Benefits of technology

[0008]In view of the foregoing, the present disclosure provides a plasma processing apparatus capable of improving uniformity of plasma density and plasma processing characteristics in the target object surface.

[0010]In accordance with this configuration, the high frequency antenna includes the outer coil, the inner coil and the n (n is an integer equal to or greater than 1) number of intermediate coils between them that are concentrically wound about the central axis. As a result, plasma can be generated in a plasma excitation region by the n (n≧1) number of intermediate coils as well as the inner coil and the outer coil. Accordingly, it is possible to avoid a decrease of a plasma density, which would occur in an intermediate region between the inner and the outer coils if the plasma is generated by the two coils, i.e., the inner and outer coils. Therefore, overall plasma uniformity can be achieved, so that uniformity of the plasma process in the target object surface can be secured.

[0014]As a consequence, a plasma density at an outer region of the plasma excitation region is controlled to be slightly higher than an overall plasma density, while a plasma density decreases at an intermediate region between the outer region and the inner region of the plasma excitation region is suppressed. Therefore, the overall plasma uniformity can be achieved, so that the uniformity of the plasma process in the target object surface can be secured.

[0029]In accordance with the present disclosure, uniformity of plasma density and plasma processing characteristics in the target object surface can be improved.

Problems solved by technology

As a result, plasma process uniformity in a target object surface deteriorates.

Besides, since the plasma density also varies depending on plasma conditions such as pressure or the like, it has been difficult to achieve plasma uniformity.

Therefore, it has been more difficult to achieve the plasma uniformity.

Images