The invention provides a 915 MHz MPCVD device for 16-inch
diamond wafer deposition, and relates to the technical field of
microwave plasma chemical vapor deposition. The device comprises a shell, a cavity is formed in the shell, a
microwave inlet is formed in the top of the shell, a
coaxial antenna is installed in the cavity of the shell, an air inlet is formed in the
coaxial antenna, an air outlet and a substrate are arranged at the bottom of the shell, and the air inlet and the air outlet are communicated with the cavity; and a plurality of
microwave medium windows are arranged on the inner wall of the shell. The microwave
dielectric windows are arranged, the length and the phase of a
microwave transmission path are changed, the two microwave
electric field areas are connected into a whole, the
plasma is excited, and the formed
plasma area is located on the substrate. According to the device, a continuous TM02 microwave
electric field with the
diameter of 16 inches is generated on a substrate through the design of the structure of the
resonant cavity and the shape and position of a microwave medium, a large-size plasma area is excited, and 16-inch
diamond wafer deposition is achieved.