Plasma processing apparatus

Abstract

The present invention provides a capacitively coupled plasma processing apparatus capable of easily and arbitrarily adjusting the plasma density distribution, and improving uniformity and the manufacturing yield of the plasma processing. The susceptor 12 is radially divided into two: a susceptor center electrode 12A, and an annular susceptor peripheral electrode 12B surrounding. The RF power output from a high frequency power source is preferably supplied to the susceptor perimeter electrode 12B through a lower power feed conductor 18 for high frequency discharge or plasma generation, and simultaneously the RF power is supplied to the susceptor central electrode 12A as well through the variable capacitance coupling unit 28 at a variable distribution ratio.

Description

technical field [0001] The invention relates to a technology for implementing plasma processing on a processed substrate, in particular to a capacitively coupled plasma processing device. Background technique [0002] In processes such as etching, deposition, oxidation, and sputtering in the manufacturing process of semiconductor devices and FPDs (Flat Panel Displays), plasma is widely used in order to react well to process gases at relatively low temperatures. Conventionally, among the sheet-type plasma processing apparatuses, capacitively coupled plasma processing apparatuses that can easily realize large-aperture plasma have become the mainstream. [0003] Generally, in a capacitively coupled plasma processing apparatus, an upper electrode and a lower electrode are arranged in parallel in a processing container constituting a vacuum chamber, and a substrate to be processed (semiconductor wafer, glass substrate, etc.) is placed on the lower electrode, Apply high frequency...

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Problems solved by technology

Moreover, in the prior art, the first high frequency and the second high frequency are applied to the lower electrode of the single body through the same power supply component, so it is difficult to make (depending on the first high frequency) on the substrate to be processed arranged on the lower electrode The electric field intensity distribution characteristics of the second high frequency) the plasma density distribution characteristics and (depending on the electric field intensity distribution characteristics of the second high frequency) the self-bias voltage distribution characteristics are simultaneously optimized. For example, to improve the uniformity of the plasma density, the There will be a problem that the uniformity of anisotropic etching will decrease

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